? 2003 ixys all rights reserved hiperfast tm igbt with diode lightspeed tm series symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 14 a i c90 t c = 90c 7 a i cm t c = 25c, 1 ms 30 a ssoa v ge = 15 v, t vj = 125c, r g = 22 ? i cm = 14 a (rbsoa) clamped inductive load, l = 300 h @ 0.8 v ces p c t c = 25c 75 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque, (to-220) m3 0.45/4 nm/lb.in. m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces t j = 25c 100 a v ge = 0 v t j = 125c 750 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.0 2.5 v features ? international standard packages jedec to-263 surface mountable and jedec to-220 ab ? high frequency igbt ? high current handling capability ? hiperfast tm hdmos tm process ? mos gate turn-on - drive simplicity applications ? uninterruptible power supplies (ups) ? switched-mode and resonant-mode power supplies ? ac motor speed control ? dc servo and robot drives ? dc choppers advantages ? high power density ? suitable for surface mounting ? very low switching losses for high frequency applications v ces = 600 v i c25 = 14 a v ce(sat)typ = 2.0 v t fi = 45ns g = gate, c = collector, e = emitter, tab = collector g e c (tab) to-263 aa (ixga) g c e to-220ab (ixgp) ds98720a(01/03) ixga 7n60cd1 ixgp 7n60cd1 preliminary data
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixga 7n60cd1 ixgp 7n60cd1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 3 7 s pulse test, t 300 s, duty cycle 2 % c ies 500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 50 pf c res 17 pf q g 25 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 15 nc q gc 10 nc t d(on) 10 ns t ri 10 ns t d(off) 65 130 ns t fi 45 110 ns e off 0.12 0.25 mj t d(on) 10 ns t ri 15 ns e on 0.15 mj t d(off) 120 ns t fi 85 ns e off 0.22 mj r thjc igbt 1.65 k/w r thck 0.25 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 0.8 ? v ces , r g = r off = 18 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 0.8 ? v ces , r g = r off = 18 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g to-220 ab outline dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 1. gate 2. collector 3. emitter 4. collector botton side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 aa outline pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10a; t vj = 150 c 1.96 v t vj = 25 c 2.95 v i rm v r = 100 v; i f =25a; -di f /dt = 100 a/ s 2 2.5 v l < 0.05 h ; t vj = 100 c t rr i f = 1 a; -di/dt = 50 a/ s; v r = 30 v t j = 25 c35ns r thjc diode 1.6 k/w min. recommended footprint (dimensions in inches and mm)
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