document number: 81931 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.3, 23-feb-10 1 high speed infrared emitting diode, 940 nm, gaalas, mqw VSLB3940 vishay semiconductors description VSLB3940 is a high speed infrared emitting diode in gaalas, mqw technology, molded in a clear plastic package. features ? package type: leaded ? package form: t-1, clear epoxy ? dimensions: ? 3 mm ? peak wavelength: p = 940 nm ? high speed ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 22 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching to si photodetectors ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? infrared remote control units ? free air transmission systems ? infrared source for optical counters and card readers note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 636 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) VSLB3940 65 22 940 15 ordering information ordering code packaging remarks package form VSLB3940 bulk moq: 5000 pcs, 5000 pcs/bulk t-1 absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.1, t p = 100 s i fm 1a surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance juncti on/ambient j-std-051, leads 7 mm, soldered on pcb r thja 300 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81931 2 rev. 1.3, 23-feb-10 VSLB3940 vishay semiconductors high speed infrared emitting diode, 940 nm, gaalas, mqw fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 010203040506070 8 0 90 100 21317 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 300 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 2131 8 i f - for w ard c u rrent (ma) r thja = 300 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.15 1.35 1.6 v i f = 1 a, t p = 100 s v f 2.2 v temperature coefficient of v f i f = 1 ma tk vf - 1.5 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 70 pf radiant intensity i f = 100 ma, t p = 20 ms i e 32 65 110 mw/sr i f = 1 a, t p = 100 s i e 650 mw/sr radiant power i f = 100 ma, t p = 20 ms e40mw temperature coefficient of radiant power i f = 1 ma tk ? e - 1.1 %/k i f = 100 ma tk ? e - 0.51 %/k angle of half intensity ? 22 deg peak wavelength i f = 30 ma p 940 nm spectral bandwidth i f = 30 ma ? 25 nm temperature coefficient of p i f = 30 ma tk p 0.25 nm rise time i f = 100 ma, 20 % to 80 % t r 15 ns fall time i f = 100 ma, 20 % to 80 % t f 15 ns virtual source diameter d 2 mm
document number: 81931 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.3, 23-feb-10 3 VSLB3940 high speed infrared emitting diode, 940 nm, gaalas, mqw vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - relative radiant int ensity vs. ambient temperature fig. 7 - relative radiant power vs. wavelength fig. 8 - relative radiant intensity vs. angular displacement 1 10 100 1000 01 23 t p = 100 s t p /t= 0.001 v f - for w ard v oltage ( v ) 21534 i f - for w ard c u rrent (ma) 90 92 94 96 9 8 100 102 104 106 10 8 110 - 40 - 20 0 20 40 60 8 0 100 t am b - am b ient temperat u re (c) v f, rel - relati v e for w ard v oltage ( % ) i f = 100 ma i f = 10 ma i f = 1 ma 21443 t p = 20 ms i f - for w ard c u rrent (a) 21951 i e - radiant intensity (m w /sr) 0.1 1 10 100 1000 0.001 0.01 0.1 1 t p = 100 s 40 60 8 0 100 120 140 160 1 8 0 - 60 - 40 - 20 0 20 40 60 8 0100 t am b - am b ient temperat u re (c) i e rel - relati v e radiant intensity ( % ) t p = 20 ms i f = 1 ma 21444 i f = 100 ma 0 10 20 30 40 50 60 70 8 0 90 100 8 40 88 0 920 960 1000 1040 - w a v elength (nm) 21445 e rel - relati v e radiant po w er ( % ) i f = 30 ma 21441 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 0 0.2 0.4 i e rel - relati v e radiant intensity ? - ang u lar displacement
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81931 4 rev. 1.3, 23-feb-10 VSLB3940 vishay semiconductors high speed infrared emitting diode, 940 nm, gaalas, mqw package dimensions in millimeters ? 3.2 0.15 ? 2.9 0.15 0.4 + 0.15 - 0.05 < 0.6 3.5 0.1 4.5 0.3 5. 8 0.3 30.3 0.5 1.5 0.25 0.6 0.15 2.54 nom. dra w ing- n o.: 6.544-5255.01-4 iss u e: 7; 25.09.0 8 95 10913 specifications according to di n technical dra w ings a c area not plane (2.5) r 1.4 (sphere)
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