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inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3512 description low noise and high gain nf = 1.6 db typ. @f = 900 mhz pg = 10.5 db typ. @f = 900 mhz applications designed for use in low-noise and small signal amplifiers from vhf ~ uhf band. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 15 v v ceo collector-emitter voltage 11 v v ebo emitter-base voltage 2 v i c collector current-continuous 50 ma p c collector power dissipation @t c =25 0.6 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3512 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 10 a ; i e = 0 15 v i cbo collector cutoff current v cb = 12v; i e = 0 1.0 a i ceo collector cutoff current v ce = 10v; r be = 1.0 a i ebo emitter cutoff current v eb = 1v; i c = 0 1.0 a h fe dc current gain i c = 20ma ; v ce = 5v 50 250 f t current-gain?bandwidth product i c = 20ma ; v ce = 5v 6.0 ghz c ob output capacitance i e = 0 ; v cb = 5v;f= 1.0mhz 1.2 1.6 pf pg power gain i c = 20ma; v ce = 5v; f= 900mhz 10.5 db nf noise figure i c = 5ma ; v ce = 5v; f= 900mhz 1.6 db isc website www.iscsemi.cn 2 inchange semiconductor isc rf product specification isc silicon npn rf transistor 2SC3512 isc website www.iscsemi.cn |
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