semix171kh16s ? by semikron rev. 2 ? 25.03.2010 1 semix ? 1s kh rectifier thyr./diode module semix171kh16s features ? terminal height 17 mm ? chips soldered directly to isolated substrate typical applications* ? input bridge rectifier for ac/dc motor control ? power supply absolute maximum ratings symbol conditions values unit chip i t(av) sinus 180 t c =85c 170 a t c = 100 c 125 a i tsm 10 ms t j =25c 5400 a t j = 130 c 4800 a i 2 t 10 ms t j =25c 145000 a 2 s t j = 130 c 115000 a 2 s v rsm 1700 v v rrm 1600 v v drm 1600 v (di/dt) cr t j = 130 c 200 a/s (dv/dt) cr t j = 130 c 1000 v/s t j -40 ... 130 c module t stg -40 ... 125 c v isol ac sinus 50hz 1min 4000 v 1s 4800 v characteristics symbol conditions min. typ. max. unit chip v t t j =25c, i t = 500 a 1.6 v v t(to) t j = 130 c 0.85 v r t t j = 130 c 1.5 m ? i dd ;i rd t j = 130 c, v dd = v drm ; v rd = v rrm 60 ma t gd t j =25c, i g =1a, di g /dt = 1 a/s 1s t gr v d = 0.67 * v drm 2s t q t j = 130 c 150 s i h t j =25c 150 400 ma i l t j =25c, r g =33 ? 300 1 000 ma v gt t j =25c, d.c. 2v i gt t j =25c, d.c. 150 ma v gd t j = 130 c, d.c. 0.25 v i gd t j = 130 c, d.c. 10 ma r th(j-c) per thyristor k/w per module k/w r th(j-c) sin. 180 per thyristor 0.18 k/w per module 0.18 k/w r th(j-c) per thyristor k/w per module k/w module r th(c-s) per chip k/w per module 0.075 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm a 5 * 9,81 m/s 2 w145g
semix171kh16s 2 rev. 2 ? 25.03.2010 ? by semikron fig. 1l: power dissipation per thyristor/diode vs. on-state current fig. 1r: power dissipation per thyristor/diode vs. ambient temperature fig. 2l: power dissipation of one module vs. rms current fig. 2r: power dissipation of one module vs. case temperature fig. 3l: power dissipation of two modules vs. direct current fig. 3r: power dissipation of two modules vs. case temperature
semix171kh16s ? by semikron rev. 2 ? 25.03.2010 3 fig. 4l: power dissipation of three modules vs. direct current fig. 4r: power dissipation of three modules vs. case temperature fig. 5: recovered charge vs. current decrease fig. 6: transient thermal impedance vs. time fig. 7: on-state characteristics fig. 8: surge overload current vs. time
semix171kh16s 4 rev. 2 ? 25.03.2010 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may not be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. t he use of semikron products in life support appliances and syste ms is subject to prior specification and written approval by semikron . we therefore strongly recommend prior consultation of our pers onal. fig. 9: gate trigger characteristics spring configuration semix 1s
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