sa7527 hangzhou?silan?microelectronics?co.,ltd ?rev:1.0??????2005.07.22 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?1?of?8 block?diagram power?factor?correction?controller?of?critical?ducting description the? sa7527? provides? simple? and? high? performance active? power factor? correction.? the? sa7527? is? optimized for? electronic? ballasts? and low? power? and? high-density? power? supplies? which? require minimum board? size,? reduced external? components? and? low? power? dissipation. because? the r/c? filter? is? included? in? the? current? sense? block,? the external? r/c? filter? is? not? necessary.? special? circuitry? has? also? been added?to?prevent?no?load?runaway?conditions.?regardless?of the?supply voltage,? the? output? drive? clamping? circuit? limits the? overshoot? of? the power?mosfet?gate?drive.?it?greatly?enhances?the?system?reliability. features *?internal?start-up?timer *?internal?r/c?filter?eliminates?the?need?for?an?external?r/c?filter *?very?precise?adjustable?output?over?voltage?protection *?zero?current?detector *?one?quadrant?multiplier *?trimmed?1.5%?internal?band?gap?reference *?under?voltage?lockout?with?3v?of?hysteresis *?totem?pole?output?with?high?state?clamp *?low?start-up?and?operating?current *?8-pin?dip?or?8-pin?sop dip-8-300-2.54 sop-8-225-1.27 ordering?information applications *?electronic?ballast *?smps device package sa7527 dip-8-300-2.54 SA7527S sop-8-225-1.27
sa7527 hangzhou?silan?microelectronics?co.,ltd ?rev:1.0??????2005.07.22 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?2?of?8 absolute?maximum?ratings (t amb =25 c) characteristics symbol rating unit supply?voltage v cc 30 v peak?drive?output?current i oh ,?i ol 500 ma driver?output?clamping?diodes v o >v cc ?or?v o <-0.3v iclamp 10 ma detector?clamping?diodes idet 10 ma error?amp,?multiplier?and comparator?input?voltage vin -0.3?to?6 v operating?junction?temperature tj 150 c operating?temperature?range t opr -25?to?125 c storage?temperature?range t stg -65?to?150 c power?dissipation p d 0.8 w temperature?characteristics characteristics symbol min. typ. max. unit temperature?stability?for?reference?voltage?(vref) d vref -- 20 -- mv temperature?stability?for?multiplier?gain?(k) d k/ d t -- -0.2 -- %/ c electrical?characteristics (unless?otherwise?stated,?v cc =14v,?-25 c t amb 125 c) characteristics symbol test?condition min. typ. max. unit under?voltage?lockout?section start?threshold?voltage v th?(st) ?v cc ?increasing 10.5? 11.5? 12.5 v uvlo?hysteresis h y?(st) ? -- 2 3 4 v supply?current?section start-up?supply?current i st v cc =vth(st)-0.2 10 60 100 m a operating?supply?current i cc output?not?switching -- 3 6 ma operating?current?ovp i cc(ovp) vinv=3v -- 1.7 4 ma dynamic?operating?supply?current i dcc ? 50khz,?ci=1nf -- 4 8 ma error?amplifier?section iref=0ma,?tamb=25 c 2.465 2.5? 2.535 v voltage?feedback?input?threshold v ref -25 tamb 125 c 2.44 2.5 2.56 v line?regulation d v ref1 ? 14v vcc 25v -- 0.1 10 mv temperature?stability?of?vref?(note) d v ref3 ? -25 tamb 125 c -- 20 -- mv input?bias?current i b(ea) ? -- -0.5 -- 0.5 m a output?source?current i source ? vm2=4v -2 -4 -- ma output?sink?current i sink ? vm2=4v 2 4 -- ma output?upper?clamp?voltage?(note) v eao(h) ? isource=0.1ma -- 6 -- v output?lower?clamp?voltage?(note) v eao(l) ? isink=0.1ma -- 2.25 -- v (to?be?continued)
sa7527 hangzhou?silan?microelectronics?co.,ltd ?rev:1.0??????2005.07.22 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?3?of?8 (continued) characteristics symbol test?condition min. typ. max. unit large? signal? open? loop? g gain (note) gv -- 60 80 -- db power?supply?rejection?ratio?(note) p srr ? 14v vcc 25v 60 80 -- db unity?gain?bandwidth?(note) g bw ? -- -- 1 -- mhz slew?rate?(note) sr -- -- 0.6 -- v/ m s multiplier?section input?bias?current?(pin3) ib(m)? -- -0.5 -- 0.5 m a m1?input?voltage?range?(pin3) d vm1? -- 0 -- 3.8 v m2?input?voltage?range?(pin2) d v m2 ? -- v ref --? v ref +2.5 v multiplier?gain?(note) k vm1=1v,?vm2=3.5v 0.36? 0.44? 0.52? 1/v maximum?multiplier?output?voltage? v omax(m) vinv=0v,?vm1=4v 1.65 1.8 1.95 v temperature?stability?of?k?(note) d k/ d t? -25 tamb 125 c -- -0.2 -- %/ c current?sense?section input?offset?voltage?(note) v io(cs) ? vm1=0v,?vm2=2.2v -10 3 10 mv input?bias?current i b(cs) ? 0v vcs 1.7v -1 -0.1 1 m a current?sense?delay?to?output?(note) t d(cs) ? -- -- 200 500 ns zero?current?detect?section input?voltage?threshold v th(det) ?v det ?increasing 1.7 2 2.3 v detect?hysteresis h y(det) ? -- 0.2 0.5 0.8 v input?low?clamp?voltage v clamp(i) idet=-100 m a 0.45? 0.75 1 v input?high?clamp?voltage v clamp(h) idet=3ma 6.5 7.2 7.9 v input?bias?current i b(det) ? 1v v det 5v -1 -0.1 1 m a input?high/low?clamp?diode?current (note) i clamp(d) ? -- -- -- 3 ma output?section output?voltage?high v oh i o =-10ma 10.5 11 -- v output?voltage?low v oi i o =10ma -- 0.8 1 v rising?time?(note) t r ci=1nf -- 130 200 ns falling?time?(note) t f ci=1nf -- 50 120 ns maximum?output?voltage v omax(o) v cc =20v,?i o =100 m a 12 14 16 v output?voltage?with?uvlo?activated v omin(o) ?v cc =5v,?i o =100 m a -- -- 1 v restart?timer?section restart?time?delay td(rst)? v m1 =1v,?v m2 =3.5v -- 150 -- m s over?voltage?protection?section soft?ovp?detecting?current i sovp ? -- 25 30 35 m a dynamic?ovp?detecting?current i dovp ? -- 35 40 45 m a static?ovp?threshold?voltage v ovp ??v inv =2.7v 2.1 2.25 2.4 v note:?these?parameters,?although?guaranteed,?are?not?100%?tested?in?production. multiplier?gain: ) 2 vpin 2 vm , 3 vpin 1 vm ( ) vref 2 vm ( x 1 vm threshold _ 4 pin k = = - =
sa7527 hangzhou?silan?microelectronics?co.,ltd ?rev:1.0??????2005.07.22 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?4?of?8 pin?configurations s a 7 5 2 7 pin?descriptions pin?no. pin?name description 1 inv inverting? input? of? the? error? amplifier.? the? output? of? the? boost converter?should?be?resistively?divided?to?2.5v?and?connected?to?this pin. 2 ea_out the?output?of?the?error?amplifier.?a?feedback?compensation?network is?placed?between?this?pin?and?the?inv?pin. 3 mult input? to? the? multiplier? stage.? the? full-wave? rectified? ac? voltage? is divided?to?less?than?2v?and?is?connected?to?this?pin. 4 cs input?of?the?pwm?comparator.?the?mosfet?current?is?sensed?by?a resistor? and? the? resulting? voltage? is? applied? to? this? pin.? an? internal r/c?filter?is?included?to?reject?any?high?frequency?noise. 5 idet zero?current?detection?input. 6 gnd the?ground?potential?of?all?the?pins. 7 out gate? driver? output.? the? push? pull? output? stage? is? able? to? drive? the power?mosfet?with?peak?current?of?500ma. 8 v cc supply?voltage?of?driver?and?control?circuits. electrical?characteristics?curves figure?1.?error?amplifier?output?voltage vs?current?sensing?threshold figure?2.?multiplier?input?voltage vs?current?sensing?threshold v m 1 = 1 . 5 v v m 1 = 1 . 0 v (to?be?continued)
sa7527 hangzhou?silan?microelectronics?co.,ltd ?rev:1.0??????2005.07.22 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?5?of?8 (continued) figure?3.?supply?current?vs?supply?voltage 0. 015 0. 012 0. 009 0. 003 0. 000 0 10 20 30 40 50 supply?voltage (v) 0. 006 test?circuit s a 7 5 2 7 test?specification (unless?otherwise?specified,?v dc2 =14v) parameter switches test?conditions test point remark v th(st) s2,s3,s4,s5 v dc3 =3,v dc4 =1,v dc6 =0 b v dc2 increase h y(st) s2,s3,s4,s5 v dc3 =3,v dc4 =1,v dc6 =0 b following? above,? decrease? the v dc2 ?until?c?level?changed i (st) s2,s3,s4,s5 v dc3 =3,v dc4 =1,v dc6 =0 b v dc2 =?v th(st) -0.2 i (cc) s2,s3,s4,s5 v dc3 =3,v dc4 =1,v dc6 =0 b -- i cc(ovp) s1 v dc1 =3 b -- i dcc s1,s3,s4,s7,s8? v dc6 =0 b input? 50khz/2v? square? wave? to f v ref s9 -- g ? v ref s9 -- g v dc2 =14v ? 25v i b(ea) s1 v dc1 ?change g -- i (source) s1,s2 v dc1 =0,v dc3 =4 a -- i (sink) s1,s2 v dc1 =3,v dc3 =4 a -- v eao(h) s1 v dc1 =0 a the?source?current?of?a?is?1ma v eao(l) s1 v dc1 =3 a the?sink?current?of?a?is?1ma i b(m) s3 -- e v dc4 :?0~4v (to?be?continued)
sa7527 hangzhou?silan?microelectronics?co.,ltd ?rev:1.0??????2005.07.22 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?6?of?8 (continued) parameter switches test?conditions test point remark ? v m1 s1,s3,s4,s5 v dc1 =2,?initialize??v dc4 ,v dc6 low?level,?enable?c?high?level e increasing? the? v dc6 ? and? v dc4 , enables? the? c? changes? until? the v dc4 ?change?do?not?affect?the?c level. ? v m2 s1,s2,s3,s4,s5 v dc1 =2,v dc4 =1,? initialize v dc3 ,?v dc6 ? low?level,? enable c?high?level. a increasing? the? v dc6 and? v dc3 level,? enables? the? c? changes until? the? v dc3 ? change? do? not affect?the?c?level. k s1,s2,s3,s4 v dc1 =2v,v dc3 =3.5,v dc4 =1v -- increase? the? v dc6 ? until? c? level changed. k=v dc6 /(v dc3 *v dc4 ) v omax s1,s3,s4,s5 v dc1 =2v,?v dc4 =4 d increase? the? vdc6? until? c? level changed. i b(cs) s4 -- d v dc6 :0~1.7v v th(det) s1,s2,s3,s4,s6 v dc1 =2v,?v dc3 =3,v dc4 =1, v dc6 =0, g increase? the? v dc5 ? until? c? level changed. h y(det) s1,s2,s3,s4,s6 v dc1 =2v,?v dc3 =3,v dc4 =1, v dc6 =0, g following? above,? the? v dc5 decreases?until?c?level?changed. v clamp(l) -- -- g input?100 m a?to?g v clamp(h) -- -- g output?3ma?from?g i b(det) s6 -- g v dc5 :1~5v v oh s1,s2,s3,s4,s5? v dc1 =2,v dc6 =0 c output?10ma?from?c v ol s1,s2,s3,s4,s5? v dc1 =2,v dc6 =2 c input?10ma?to?c t r s1,s2,s3,s4,s7? v dc1 =2,v dc6 =0 c input? 50khz/2v? square? wave? to f t f s1,s2,s3,s4,s7? v dc1 =2,v dc6 =0 c input? 50khz/2v? square? wave? to f v omax(o) s1,s2,s3,s4,s5? v dc1 =2,v dc2 =20 c output?100 m a?from?c v omin(o) s1,s2,s3,s4,s5? v dc1 =2,v dc2 =5 c output?100 m a?from?c t d(rst) s1,s2,s3,s5 v dc1 =2,v dc3 =3.5,v dc4 =1 c input? 10khz,? 10 m s,? 2v? narrow pulse?to?d?(note1) i sovp s1,s3,s4,s5 v dc1 =2,v dc6 =0 a input? static? current? to? a,? and enables?c?low?level. i dovp s1,s3,s4,s5 v dc1 =2,v dc6 =0 a input? dynamic? current? to? a,? and enable?c?low?level. v ovp s1,s2,s3,s4,s5? v dc1 =2.7,v dc4 =1,v dc6 =0 a increase? the? v dc3 ? until? c? level changed. t f s1,s2,s3,s4,s7? v dc1 =2,v dc6 =0 c input? 50khz/2v? square? wave? to f
sa7527 hangzhou?silan?microelectronics?co.,ltd ?rev:1.0??????2005.07.22 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?7?of?8 typical?application?circuit note:the?circuit?and?parameters?are?reference?only,?please?set?the?parameters?of?the?real?application circuit?based?on?the?real?test?. application?circuit?components?list part?number value note manufacturer r1 1.8m w 1/4w - r2 18k w 1/4w - r3 120k w 1w - r5 22k w 1/4w - r6 10 w 1/4w - r7 3.0 w 1w - r8 1m w 1/4w - r9 6k w 1/4w - vr1 103 variable?resistor - c1 47nf,?275vac box-cap - c2 100nf,?275vac box-cap - c3,4 2200pf,?3000v y-cap - c5 0.1 m f,?630v miller-cap - c6 47 m f,?35v electrolytic - c7 1 m f mlcc - c8 22 m f,?450v electrolytic - c9 1nf,?25v ceramic - bd1 600v/4a bridge?diode - d1,3 75v,?150ma in4148 - d2 600v,?1a byv26c - lf1 45mh line?filter - t1 1.76mh(122t:10t) ei2219 - q1 500v,?2.3a fqpf4n50 fairchild f1 250v,?3a fuse - v1 470v 471 - ntc 10 w 10d09 -
sa7527 hangzhou?silan?microelectronics?co.,ltd ?rev:1.0??????2005.07.22 http:?www.silan.com.cn????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????page?8?of?8 package?outline dip-8-300-2.54 unit:?mm 6 . 3 5 4 . 3 6 m a x 3 . 0 0 m i n 7 . 6 2 0 . 2 5 0 . 2 5 0 . 0 5 0 . 3 0 sop-8-225-1.27 unit:?mm
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