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savantic semiconductor product specification silicon npn power transistors 2SC3830 description with to-220c package high voltage high speed switching applications for switching regulator and general purpose applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 600 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 10 v i c collector current 6 a i cm collector current-peak 12 a i b base current 2 a p c collector dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3830 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ; i b =0 500 v v cesat collector-emitter saturation voltage i c =2a; i b =0.4a 0.5 v v besat base-emitter saturation voltage i c =2a; i b =0.4a 1.3 v i cbo collector cut-off current v cb =600v ;i e =0 1 ma i ebo emitter cut-off current v eb =10v; i c =0 100 a h fe dc current gain i c =2a ; v ce =4v 10 30 f t transition frequency i c =0.5a ; v ce =12v 8 mhz c ob output capacitance f=1mhz ; v cb =10v 45 pf switching times t on turn-on time 1.0 s t stg storage time 4.5 s t f fall time v cc =200v; i c =2a i b1 =0.2a; i b2 =-0.4a; r l =100 ? 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3830 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3830

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