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| ? ! " #!$!% !&'(() % # * # + , + - &# + # , # , # ,+ , ! ? power management in notebook computer, portable equipment and battery powered systems n-channel mosfet apm4536 handling code temp. range package code package code k : sop-8 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm4536 k : apm4536 xxxxx xxxxx - date code lead free code ? n-channel 30v/5a, r ds(on) =35m ? (typ.) @ v gs = 10v r ds(on) =45m ? (typ.) @ v gs = 4.5v ? ? ? ? ? p-channel -30v/-5a, r ds(on) =40m ? (typ.) @ v gs =-10v r ds(on) =55m ? (typ.) @ v gs =-4.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) p-channel mosfet g1 s1 s2 g2 d1 d1 d2 d2 ? 8 g1 s1 d1 d1 (8) (7) (2) (1) d2 g2 s2 d2 (4) (3) (5) (6) note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature. ? ! " #!$!% !&'(() ' ! (t a = 25 c unless otherwise noted) " #$ (t a = 25 c unless otherwise noted) symbol parameter n channel p channel unit v dss drain-source voltage 30 -30 v gss gate-source voltage 16 16 v i d * continuous drain current 5 -5 i dm * pulsed drain current v gs = 10v 20 -20 a i s * diode continuous forward current 1.7 -1.7 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 2 p d * power dissipation t a =100 c 0.8 w r ja * thermal resistance-junction to ambient 62.5 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm4536k symbol parameter test condition min. typ. max. unit static characteristics v gs =0v, i ds =250 a n-ch 30 bv dss drain-source breakdown voltage v gs =0v, i ds =-250 a p-ch -30 v v ds =24v, v gs =0v 1 t j =85 c n-ch 30 v ds =-24v, v gs =0v -1 i dss zero gate voltage drain current t j =85 c p-ch -30 a v ds =v gs , i ds =250 a n-ch 0.7 1.1 1.5 v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a p-ch -1 -1.5 -2 v n-ch 100 i gss gate leakage current v gs =16v, v ds =0v p-ch 100 na v gs =10v, i ds =5a n-ch 35 50 v gs =-10v, i ds =-5a p-ch 40 55 v gs =4.5v, i ds =4a n-ch 45 60 r ds(on) a drain-source on-state resistance v gs =-4.5v, i ds =-4a p-ch 55 75 m ? ? ! " #!$!% !&'(() . " #$ %# &' (t a = 25 c unless otherwise noted) apm4536k symbol parameter test condition min. typ. max. unit diode characteristics i sd =1.7a , v gs =0v n-ch 0.8 1.3 v sd a diode forward voltage i sd =-1.7a , v gs =0v p-ch -0.8 -1.3 v dynamic characteristics b n-ch 3 r g gate resistance v gs =0v,v ds =0v,f=1mhz p-ch 12 ? n-ch 360 c iss input capacitance p-ch 650 n-ch 75 c oss output capacitance p-ch 145 n-ch 35 c rss reverse transfer capacitance n-channel v gs =0v, v ds =25v, frequency=1.0mhz p-channel v gs =0v, v ds =-25v, frequency=1.0mhz p-ch 80 pf n-ch 10 15 t d(on) turn-on delay time p-ch 10 20 n-ch 8 20 t r turn-on rise time p-ch 15 30 n-ch 20 28 t d(off) turn-off delay time p-ch 25 50 n-ch 5 15 t f turn-off fall time n-channel v dd =15v, r l =15 ? , i ds =1a, v gen =10v, r g =6 ? p-channel v dd =-15v, r l =15 ? , i ds =-1a, v gen =-10v, r g =6 ? p-ch 15 30 ns gate charge characteristics b n-ch 14.5 20 q g total gate charge p-ch 26 35 n-ch 4.3 q gs gate-source charge p-ch 5.1 n-ch 2.3 q gd gate-drain charge n-channel v ds =15v, v gs =10v, i ds =5a p-channel v ds =-15v, v gs =-10v, i ds =-5a p-ch 3.3 nc notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing. ? ! " #!$!% !&'(() / 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 () #$ i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) n-channel 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 2.5 t a =25 o c 0 20406080100120140160 0 1 2 3 4 5 6 t a =25 o c,v g =10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 300 s 1ms 100ms dc normalized transient thermal resistance ? ! " #!$!% !&'(() ) r ds(on) - on - resistance (m ? ) drain-source on resistance i d - drain current (a) t j - junction temperature ( c) gate threshold voltage v ds - drain-source voltage (v) i d - drain current (a) output characteristics transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) normalized threshold voltage () #$ %# &' 012345 0 2 4 6 8 10 12 14 16 18 20 3v 2v v gs = 4, 5, 6, 7, 8, 9, 10v 0 4 8 121620 20 25 30 35 40 45 50 55 60 v gs =10v v gs =4.5v 012345 0 5 10 15 20 25 30 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =250 ? n-channel ? ! " #!$!% !&'(() 0 v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (pf) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) capacitance gate charge q g - gate charge (nc) v gs - gate - source voltage (v) () #$ %# &' n-channel -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 35m ? v gs = 10v i ds = 5a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 20 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 frequency=1mhz crss coss ciss 03691215 0 2 4 6 8 10 v ds =15v i ds = 5a ? ! " #!$!% !&'(() 1 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 () #$ %# &' power dissipation p tot - power (w) t j - junction temperature ( c) -i d - drain current (a) drain current t j - junction temperature ( c) safe operation area -v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) -i d - drain current (a) p-channel 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 2.5 t a =25 o c 0 20406080100120140160 0 1 2 3 4 5 6 t a =25 o c,v g =-10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 300 s 1ms 100ms dc normalized transient thermal resistance ? ! " #!$!% !&'(() 2 () #$ %# &' r ds(on) - on - resistance (m ? ) drain-source on resistance -i d - drain current (a) -v ds - drain - source voltage (v) -i d - drain current (a) output characteristics t j - junction temperature ( c) gate threshold voltage transfer characteristics -v gs - gate - source voltage (v) -i d - drain current (a) normalized threshold voltage p-channel 012345678 0 2 4 6 8 10 12 14 16 18 20 -4v -2v -3v v gs = -5,-6,-7,-8,-9,-10v 0 2 4 6 8 10 12 14 16 18 20 20 25 30 35 40 45 50 55 60 65 70 75 80 v gs = -4.5v v gs = -10v 0123456 0 2 4 6 8 10 12 14 16 18 20 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds = -250 ? ? ! " #!$!% !&'(() 3 () #$ %# &' drain-source on resistance normalized on resistance t j - junction temperature ( c) -v sd - source - drain voltage (v) source-drain diode forward -i s - source current (a) -v ds - drain - source voltage (v) c - capacitance (pf) capacitance gate charge q g - gate charge (nc) -v gs - gate - source voltage (v) p-channel -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 40m ? v gs = -10v i ds = -5a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 20 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 200 400 600 800 1000 frequency=1mhz crss coss ciss 0 5 10 15 20 25 30 0 2 4 6 8 10 v ds = -15v i ds = -5a ? ! " #!$!% !&'(() %( millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc 18 8 h e e1 e2 0.015x45 d a a1 0.004max. 1 l sop-8 pin ( reference jedec registration ms-012) ? ! " #!$!% !&'(() %% terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p ! *# (ir/convection or vpr reflow) # ! * $) + profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface. ? ! " #!$!% !&'(() %' # ( ,! t ao e w po p ko bo d1 d f p1 table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. # ! * %# &' test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles ! )( ? ! " #!$!% !&'(() %. # + - anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 #- ( application carrier width cover tape width devices per reel sop- 8 12 9.3 2500 # ( ,! %# &' a j b t2 t1 c application a b c j t1 t2 w p e 330 1 62 1.5 12.75 + 0.1 5 2 + 0.5 12.4 +0.2 2 0.2 12 + 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop-8 5.5 0.1 1.55 0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0.1 2.1 0.1 0.3 0.013 (mm) |
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