transistor(pnp) features ? complementary t o mmst 5551 ? small surface mount pa ckage ? ideal f or medium power amplification a nd switching marking:k 4m m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 160 v v ceo collector - emitter voltage - 150 v v ebo emitter - base voltage - 5 v i c collector current - 600 m a p c collector power dissipation 200 m w r ja thermal resistance f rom j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown volt age v (br) cbo i c = - 1 0 0 a , i e =0 - 160 v collector - emitter breakdown voltage v (br) c e o i c = - 1 ma, i b =0 - 150 v emitter - base breakdown voltage v (br)eb o i e = - 1 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 120 v, i e =0 - 50 n a emitter cut - off current i e b o v e b = - 3 v, i c =0 - 50 n a v ce = - 5 v, i c = - 1m a 50 v ce = - 5 v, i c = - 1 0 m a 60 300 dc current gain h fe v ce = - 5 v, i c = - 5 0m a 50 i c = - 50 m a, i b = - 5 ma - 0. 5 v collector - emitter saturation voltage v ce(sat) i c = - 1 0 m a, i b = - 1 ma - 0. 2 v i c = - 5 0m a, i b = - 5 ma - 1 v base - emitter saturation voltage v b e(sat) i c = - 10 m a, i b = - 1 ma - 1 v transition frequency f t v ce = - 1 0 v,i c = - 1 0 ma , f=1 00 mhz 1 00 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f=1mhz 6 pf so t C 3 23 1. base 2. emitter 3. collector MMST5401 1 date:2011/05 www.htsemi.com semiconductor jinyu
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