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el2126c ? ? caution: these devices are sensitive to electrosta tic discharge; follow proper ic handling procedures. 1-888-elantec or 408-945-1323 | intersil (and design) is a registered trademark of intersil americas inc. elantec ? is a registered trademark of elantec semiconductor, inc. copyright ? intersil americas inc. 2002. all rights reserved features ? voltage noise of only 1.3nv/ hz current noise of only 1.2pa/ hz 200v offset voltage 100mhz -3db bw for a v =10 very low supply current - 4.7ma sot-23 package 2.5v to 15v operation applications ultrasound input amplifiers wideband instrumentation communication equipment agc & pll active filters wideband sensors *el2126cw symbol is .gxxx where xxx represents date code ordering information part no package tape & reel outline # el2126cw-t7 5-pin sot-23* 7? mdp0038 EL2126CW-T13 5-pin sot-23* 13? mdp0038 el2126cs 8-pin so - mdp0027 el2126cs-t7 8-pin so 7? mdp0027 el2126cs-t13 8-pin so 13? mdp0027 general description the el2126c is an ultra-low noise, wideband amplifier that runs on half the supply current of competitiv e parts. it is intended for use in systems such as ultrasound imaging where a very small signal needs to be amplified by a large amount wit hout adding significant noise. its low power dissipation enables it to be packaged in the tiny sot-23 package, which further helps systems where many input channels cre- ate both space and power dissipation problems. the el2126c is stable for gains of 10 and greater and uses traditional voltage feedback. this allows the use of reactive elements in the feed- back loop, a common requirement for many filter topologies. it operates from 2.5v to 15v supplies and is available in the 5-pin sot-23 and 8-pin so packages. the el2126c is fabricated in elantec?s proprietary complementary bipolar process, and is specified for operation over the full -40c to +85c temperature range. connection diagrams 1 2 3 4 8 7 6 5 el2126cs (8-pin so) 1 2 3 5 4 el2126cw (5-pin sot-23) - + - + vs+ in- in+ vs- out nc in- in+ vs- nc vs+ out nc el2126c ultra-low noise, low power, wideband amplifier november 14, 2002
2 el2126c ultra-low noise, low power, wideband amplifier el2126c absolute maximum ratings (t a = 25c) v s + to v s - 33v continuous output current 40ma any input v s + - 0.3v to v s - + 0.3v power dissipation see curves operating temperature -40c to +85c storage temperature -60c to +150c maximum die junction temperature +150c important note: all parameters having min/max specifications are guaranteed. typ values are for information purposes only. unless otherwise not ed, all tests are at the specified temperature and are pulsed tests, therefore: t j = t c = t a electrical characteristics v s + = +5v, v s - = -5v, t a = 25c, r f = 180 ? , r g = 20 ? , r l = 500 ? unless otherwise specified. parameter description conditions min typ max unit dc performance v os input offset voltage (so8) 0.2 2 mv input offset voltage (sot23-5) 3mv t cvos offset voltage temperature coefficient 17 v/c i b input bias current -10 -7 a i os input bias current offset 0.06 0.6 a t cib input bias current temperature coefficient 0.013 a/c c in input capacitance 2.2 pf a vol open loop gain v o = -2.5v to +2.5v 80 87 db psrr power supply rejection ratio [1] 80 100 db cmrr common mode rejection ratio at cmir 75 106 db cmir common mode input range -4.6 3.8 v v outh positive output voltage swing no load, r f = 1k ? 3.8 3.8 v v outl negative output voltage swing no load, r f = 1k ? -4 -3.9 v v outh2 positive output voltage swing r l = 100 ? 3.2 3.45 v v outl2 negative output voltage swing r l = 100 ? -3.5 -3.2 v i out output short circuit current [2] 80 100 ma i sy supply current 4.7 5.5 ma ac performance - r g = 20 ? , c l = 3pf bw -3db bandwidth, r l = 500 ? 100 mhz bw 0.1db 0.1db bandwidth, r l = 500 ? 17 mhz bw 1db 1db bandwidth, r l = 500 ? 80 mhz peaking peaking, r l = 500 ? 0.6 db sr slew rate v out = 2v pp , measured at 20% to 80% 80 110 v/s os overshoot, 4vpk-pk output square wave positive 2.8 % negative -7 % t s settling time to 0.1% of 1v pulse 51 ns v n voltage noise spectral density 1.3 nv/ hz i n current noise spectral density 1.2 pa/ hz hd2 2nd harmonic distortion [3] -70 dbc hd3 3rd harmonic distortion [3] -70 dbc 1. measured by moving the supplies from 4v to 6v 2. pulse test only and using a 10 ? load 3. frequency = 1mhz, v out = 2vpk-pk, into 500 ? and 5pf load
3 el2126c ultra-low noise, low power, wideband amplifier el2126c electrical characteristics v s + = +15v, v s - = -15v, t a = 25c, r f = 180 ? , r g = 20 ? , r l = 500 ? unless otherwise specified. parameter description conditions min typ max unit dc performance v os input offset voltage (so8) 0.5 3 mv input offset voltage (sot23-5) 3mv t cvos offset voltage temperature coefficient 4.5 v/c i b input bias current -10 -7 a i os input bias current offset 0.12 0.7 a t cib input bias current temperature coefficient 0.016 a/c c in input capacitance 2.2 pf a vol open loop gain 80 90 db psrr power supply rejection ratio [1] 65 80 db cmrr common mode rejection ratio at cmir 70 85 db cmir common mode input range -14.6 13.8 v v outh positive output voltage swing no load, r f = 1k ? 13.6 13.7 v v outl negative output voltage swing no load, r f = 1k ? -13.8 -13.7 v v outh2 positive output voltage swing r l = 100 ? , r f = 1k ? 10.2 11.2 v v outl2 negative output voltage swing r l = 100 ? , r f = 1k ? -10.3 -9.5 v i out output short circuit current [2] 140 220 ma i sy supply current 56ma ac performance - r g = 20 ? , c l = 3pf bw -3db bandwidth, r l = 500 ? 135 mhz bw 0.1db 0.1db bandwidth, r l = 500 ? 26 mhz bw 1db 1db bandwidth, r l = 500 ? 60 mhz peaking peaking, r l = 500 ? 2.1 db sr slew rate (2.5v square wave, mea- sured 25%-75%) 130 150 v/s os overshoot, 4vpk-pk output square wave positive 1.6 % negative -4.4 % t s settling time to 0.1% of 1v pulse 48 ns v n voltage noise spectral density 1.4 nv/ hz i n current noise spectral density 1.1 pa/ hz hd2 2nd harmonic distortion [3] -72 dbc hd3 3rd harmonic distortion [3] -73 dbc 1. measured by moving the supplies from 13.5v to 16.5v 2. pulse test only and using a 10 ? load 3. frequency = 1mhz, v out = 2vpk-pk, into 500 ? and 5pf load
4 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves non-inverting frequency response for various r f 10 6 2 -2 -6 -10 1m 10m 100m frequency (hz) normalized gain (db) r f =1k ? r f =500 ? r f =180 ? r f =100 ? v s =5v a v =10 c l =5pf r l =500 ? non-inverting frequency response for various r f 10 6 2 -2 -6 -10 1m 10m 100m frequency (hz) normalized gain (db) r f =1k ? r f =500 ? r f =180 ? r f =100 ? inverting frequency response for various r f 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) v s =15v a v =-10 c l =5pf r l =500 ? inverting frequency response for various r f 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) v s =5v a v =-10 c l =5pf r l =500 ? non-inverting frequency response for various gain 10 6 2 -2 -6 -10 1m 10m 100m frequency (hz) normalized gain (db) a v =10 v s =5v r g =20 ? r l =500 ? c l =5pf non-inverting frequency response for various gain 10 6 2 -2 -6 -10 1m 10m 100m frequency (hz) normalized gain (db) r f =1k ? r f =350 ? r f =100 ? r f =200 ? r f =500 ? r f =1k ? r f =500 ? r f =200 ? r f =100 ? r f =350 ? a v =20 a v =50 v s =15v r g =20 ? r l =500 ? c l =5pf a v =10 a v =20 a v =50 v s =15v a v =10 c l =5pf r l =500 ?
5 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves inverting frequency response for various gain 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) inverting frequency response for various r f 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) non-inverting frequency response for various output signal levels 10 6 2 -2 -6 -10 1m 10m 100m frequency (hz) normalized gain (db) non-inverting frequency response for various output signal levels 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) inverting frequency response for various output signal levels 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) inverting frequency response for various output signal levels 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) v s =5v c l =5pf r g =35 ? a v =-10 a v =-20 a v =-50 v s =15v c l =5pf r g =20 ? a v =-10 a v =-20 a v =-50 v s =5v c l =5pf r l =500 ? r f =180 ? a v =10 v o =2.5v pp v o =5v pp v o =1v pp v o =30mv pp v o =500mv pp v s =15v c l =5pf r l =500 ? r f =180 ? a v =10 v o =5v pp v o =1v pp v o =2.5v pp v o =30mv pp v o =500mv pp v o =10v pp v s =5v c l =5pf r l =500 ? r f =350 ? a v =10 v o =3.4v pp v o =1v pp v o =2.5v pp v o =30mv pp v o =500mv pp v s =15v c l =5pf r l =500 ? r f =200 ? a v =10 v o =3.4v pp v o =1v pp v o =2.5v pp v o =30mv pp v o =500mv pp
6 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves non-inverting frequency response for various c l 10 6 2 -2 -6 -10 1m 10m 100m frequency (hz) normalized gain (db) non-inverting frequency response for various c l 10 6 2 -2 -6 -10 1m 10m 100m frequency (hz) normalized gain (db) inverting frequency response for various c l 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) inverting frequency response for various c l 8 4 0 -4 -8 -12 1m 10m 100m frequency (hz) normalized gain (db) open loop gain/phase 100 80 60 40 20 0 10k 10m 1g frequency (hz) open loop gain (db) supply current vs supply voltage 0.6/div 1.5/div supply voltage (v) supply current (ma) c l =28pf c l =16pf c l =11pf c l =5pf c l =1pf v s =15v r f =180 ? a v =10 r l =500 ? c l =28pf c l =16pf c l =11pf c l =5pf c l =1.2pf v s =5v r f =350 ? r l =500 ? a v =-10 c l =28pf c l =16pf c l =11pf c l =5pf c l =1.2pf c l =28pf c l =16pf c l =11pf c l =5pf c l =1.2pf v s =15v r f =200 ? r l =500 ? a v =-10 100k 100m 1m 250 150 50 -50 -150 -250 open loop phase () 0 0 v s =5v r f =150 ? a v =10 r l =500 ? gain phase v s =5v
7 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves peaking vs v s 3.0 2.5 2.0 1.0 0.5 0 0246810 1416 supply voltage (v) peaking (db) 12 1.5 bandwidth vs v s 160 140 100 80 40 20 0 0246810 1416 v s (v) -3db bandwidth 12 60 120 1mhz harmonic distortion vs output swing -40 -50 -60 -80 -90 -100 012345 78 v out (v p-p ) harmonic distortion (dbc) 6 -70 1mhz harmonic distortion vs output swing -30 -40 -60 -80 -90 -100 0 5 10 15 20 25 v out (v p-p ) harmonic distortion (dbc) -70 -50 v s =5v r g =20 ? r l =500 ? c l =5pf a v =10 a v =-10 2nd hd 3rd hd 2nd hd v s =5v r g =20 ? r l =500 ? c l =5pf v s =5v v o =2v p-p r f =180 ? a v =10 r l =500 ? a v =-10 a v =10 a v =-20 a v =-20 a v =50 a v =-50 v s =5v v o =2v p-p r f =180 ? a v =10 r l =500 ? 3rd hd large signal step response 0.5v/div 10ns/div small signal step response 20mv/div 10ns/div v s =5v v o =100mv pp r f =180 ? r g =20 ? v s =5v v o =2v pp r f =180 ? r g =20 ?
8 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves group delay vs frequency 16 8 0 -4 1m 10m 100m 400m frequency (hz) group delay (ns) 4 12 v s =5v r l =500 ? a v =10 a v =-10 noise vs frequency 10 1 10 100 10k 100k frequency (hz) i n (pa/ hz), v n (nv/ hz) 1k cmrr vs frequency -10 -50 -90 -110 10 1m 10m 100m frequency (hz) cmrr (db) -70 -30 1k 100k 100 10k settling time vs accuracy 70 40 20 0 0.1 1.0 10.0 accuracy (%) settling time (ns) 30 50 v s = 5 v , v o = 5 v p - p v s = 1 5 v , v o = 5 v p - p v s = 1 5 v , v o = 2 v p - p v s = 5 v, v o = 2 v p - p 60 10 total harmonic distortion vs frequency -20 -50 -80 -90 1k 10k 100m frequency (hz) thd (dbc) v s =5v v o =2v p-p 100k 1m 10m -30 -40 -70 -60 psrr vs frequency 110 70 30 10 10k 100k 1m 10m 200m frequency (hz) psrr (db) 50 90 v s =5v psrr+ psrr- i n , v s =5v v n , v s =15v i n , v s =15v v n , v s =5v
9 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves closed loop output impedance vs frequency 100 10 1 0.1 0.01 10k 1m 100m frequency (hz) closed loop output impedance ( ? ) bandwidth and peaking vs temperature 120 100 60 40 20 0 -40 40 160 temperature bandwidth (mhz) 100k 10m v s =5v v s =5v 80 80 0 120 3.5 3 2.5 2 1.5 1 0.5 0 -0.5 peaking (db) slew rate vs swing 220 180 140 100 60 -1 v out swing (v pp ) slew rate (v/s) 3 7 11 15 5v sr + 5v sr - 15v sr + 15v sr - 15913 200 160 120 80 bandwidth peaking 1 -2 0 -1 4.8 5.2 5.1 5 4.9 supply current vs temperature -50 0 100 150 50 die temperature (c) i s (ma) v s =5v v s =15v offset voltage vs temperature -50 0 100 150 50 die temperature (c) v s =5v v s =15v v os (mv) cmrr vs temperature -50 0 100 150 50 die temperature (c) cmrr (db) 120 110 100 90 80 v s =5v
10 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves 110 86 90 94 98 102 106 82 psrr vs temperature -50 0 100 150 50 die temperature (c) psrr (db) v s =5v v s =15v positive output swing vs temperature -50 0 100 150 50 die temperature (c) v outh (v) v s =5v positive output swing vs temperature -50 0 100 150 50 die temperature (c) v outh (v) v s =15v 4.05 4 3.95 3.9 3.85 3.8 13.85 13.8 13.75 13.7 13.65 13.6 -3.9 -3.95 -4.05 -4.25 -4.15 -13.76 -13.78 -13.8 -13.82 negative output swing vs temperature -50 0 100 150 50 die temperature (c) v outl (v) v s =5v negative output swing vs temperature -50 0 100 150 50 die temperature (c) v s =15v v outl (v) -4 -4.1 -4.2 slew rate vs temperature -50 0 100 150 50 die temperature (c) slew rate (v/s) 102 100 96 92 88 98 94 90 v s =5v
11 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves 155 150 140 135 3.52 3.5 3.46 3.44 slew rate vs temperature -50 0 100 150 50 die temperature (c) sr (v/s) v o =2v pp v s =15v positive loaded output swing vs temperature -50 0 100 150 50 die temperature (c) v outh2 (v) v s =5v 11.8 11.6 11.2 10.8 10.6 positive loaded output swing vs temperature -50 0 100 150 50 die temperature (c) sr (v/s) v s =15v 145 3.48 11.4 11 -3.35 -3.4 -3.45 -3.6 -3.5 3.55 -9.4 -9.8 -10.2 -10.6 negative loaded output swing vs temperature -50 0 100 150 50 die temperature (c) v outl2 (v) v s =5v negative loaded output swing vs temperature -50 0 100 150 50 die temperature (c) v s =15v v outl2 (v) 18 -9.6 -10 -10.4 1.2 0.6 0 package power dissipation vs ambient temperature jedec jesd51-3 low effective thermal conductivity test board 0 ambient temperature (c) power dissipation (w) 25 125 150 75 1 0.4 0.8 0.2 100 50 85 488mw 781mw j a = 1 6 0 c / w s o 8 j a = 2 5 6 c / w s o t 2 3 - 5
12 el2126c ultra-low noise, low power, wideband amplifier el2126c typical performance curves 1.8 0.8 0 1.6 0.4 1.2 0.2 0.6 1.4 1 package power dissipation vs ambient temperature jedec jesd51-7 high effective thermal conductivity test board 0 ambient temperature (c) power dissipation (w) 25 125 150 75 100 50 85 543mw j a = 1 1 0 c / w s o 8 1.136w j a = 2 3 0 c / w s o t 2 3 - 5
13 el2126c ultra-low noise, low power, wideband amplifier el2126c pin descriptions el2126cw (5-pin sot-23) el2126cs (8-pin so) pin name pin function equivalent circuit 1 6 vout output circuit 1 2 4 vs- supply 3 3 vina+ input circuit 2 4 2 vina- input reference circuit 2 5 7 vs+ supply v out v s + v in - v in + v s + v s -
14 el2126c ultra-low noise, low power, wideband amplifier el2126c applications information product description the el2126c is an ultra-low noise, wideband mono- lithic operational amplifier built on elantec's proprietary high speed complementary bipolar process. it features 1.3nv/ hz input voltage noise, 200v typical offset voltage, and 73db thd. it is intended for use in systems such as ultrasound imaging where very small signals are needed to be amplified. the el2126c also has excellent dc specifications: 200v v os , 22a ib, 0.4a i os , and 106db cmrr. these specifications allow the el2126c to be used in dc-sensitive applications such as difference amplifiers. gain-bandwidth product the el2126c has a gain-bandwidth product of 650mhz at 5v. for gains less than 20, higher-order poles in the amplifier's transfer function contribute to even higher closed-loop bandwidths. for example, the el2126c has a -3db bandwidth of 100mhz at a gain of 10 and decreases to 33mhz at gain of 20. it is important to note that the extra bandwidth at lower gain does not come at the expenses of stability. even though the el2126c is designed for gain 10. with external compensation, the device can also operate at lower gain settings. the rc network shown in figure 1 reduces the feedback gain at high frequency and thus ma intains the amplifier stabil- ity. r values must be less than rf divided by 9 and 1 divided by 2 rc must be less than 200mhz. choice of feedback resistor, rf the feedback resistor forms a pole with the input capac- itance. as this pole becomes larger, phase margin is reduced. this increases ringing in the time domain and peaking in the frequency domain. therefore, rf has some maximum value which should not be exceeded for optimum performance. if a large value of rf must be used, a small capacitor in the few pf range in parallel with rf can help to reduce this ringing and peaking at the expense of reducing the bandwidth. frequency response curves for various rf values are shown in the typical performance curves section of this data sheet. noise calculations the primary application for the el2126c is to amplify very small signals. to maintain the proper signal-to- noise ratio, it is essential to minimize noise contribution from the amplifier. figure 2 below shows all the noise sources for all the components around the amplifier. v n is the amplifier input voltage noise i n + is the amplifier positive input current noise i n - is the amplifier negative input current noise v rx is the thermal noise associated with each resistor: where: - k is boltzmann's constant = 1.380658 x 10 -23 - t is temperature in degrees kelvin (273+ c) - + r f r c v in v out figure 1. - + v on v in i n + i n - r 2 r 3 r 1 v n v r3 v r2 v r1 figure 2. v rx 4 ktrx =
15 el2126c ultra-low noise, low power, wideband amplifier el2126c the total noise due to the amplifier seen at the output of the amplifier can be calculated by using the following equation: as the above equation shows, to keep noise at a mini- mum, small resistor values should be used. at higher amplifier gain configuration where r 2 is reduced, the noise due to in-, r 2 , and r 1 decreases and the noise caused by in+, vn, and r 3 starts to dominate. because noise is summed in a root -mean-squares method, noise sources smaller than 25% of the largest noise source can be ignored. this can greatly simplify the formula and make noise calculation much easier to calculate. output drive capability the el2126c is designed to drive low impedance load. it can easily drive 6v p-p signal into a 100 ? load. this high output drive capability makes the el2126c an ideal choice for rf, if, and video applications. further- more, the el2126c is current-limited at the output, allowing it to withstand momentary short to ground. however, the power dissipation with output-shorted cannot exceed the power dissipation capability of the package. driving cables and capacitive loads although the el2126c is designed to drive low imped- ance load, capacitive loads will decreases the amplifier's phase margin. as shown in the performance curves, capacitive load can result in peaking, overshoot and pos- sible oscillation. for optimum ac performance, capacitive loads should be reduced as much as possible or isolated with a series resistor between 5 ? to 20 ? . when driving coaxial cables, double termination is always recommended for reflection-free performance. when properly terminated, the capacitance of the coax- ial cable will not add to the capacitive load seen by the amplifier. power supply bypassing and printed circuit board layout as with any high frequency devices, good printed circuit board layout is essential for optimum performance. ground plane construction is highly recommended. lead lengths should be kept as short as possible. the power supply pins must be closely bypassed to reduce the risk of oscillation. the combination of a 4.7f tanta- lum capacitor in parallel with 0.1f ceramic capacitor has been proven to work well when placed at each sup- ply pin. for single supply operation, where pin 4 (v s -) is connected to the ground plan e, a single 4.7f tantalum capacitor in parallel with a 0.1f ceramic capacitor across pins 7 (v s +) and pin 4 (v s -) will suffice. for good ac performance, parasitic capacitance should be kept to a minimum. ground plane construction again should be used. small chip resistors are recommended to minimize series inductance. use of sockets should be avoided since they add parasitic inductance and capaci- tance which will result in additional peaking and overshoot. supply voltage range and single supply operation the el2126c has been designed to operate with supply voltage range of 2.5v to 15v. with a single supply, the el2126c will operate from +5v to +30v. pins 4 and 7 are the power supply pins. the positive power supply is connected to pin 7. when used in single supply mode, pin 4 is connected to ground. when used in dual supply mode, the negative power supply is connected to pin 4. as the power supply voltage decreases from +30v to +5v, it becomes necessary to pay special attention to the input voltage range. the el2126c has an input voltage range of 0.4v from the negative supply to 1.2v from the positive supply. so, for example, on a single +5v sup- ply, the el2126c has an input voltage range which spans from 0.4v to 3.8v. the output range of the el2126c is also quite large, on a +5v supply, it swings from 0.4v to 3.8v. v on bw = vn 2 1 r 1 r 2 ----- - + ?? ?? ?? 2 in - 2 r 1 2 in + 2 r 3 2 1 r 1 r 2 ----- - + ?? ?? ?? 2 + 4 ktr 1 4 ktr 2 r 1 r 2 ----- - ?? ?? ?? 2 + 4 ktr 3 1 r 1 r 2 ----- - + ?? ?? ?? 2 ++ + ? ? ? ? ? ?
intersil europe sarl avenue william fraisse 3 1006 lausanne switzerland tel: +41-21-6140560 fax: +41-21-6140579 europe 16 el2126c ultra-low noise, low power, wideband amplifier el2126c all intersil u.s. products are m anufactured, assembled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. no license is granted by implication o r otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corpor ation and its products, see www.intersil.com november 14, 2002 printed in u.s.a. ? intersil corporation 7585 irvine center drive suite 100 irvine, ca 92618 tel: 949-341-7000 fax: 949-341-7123 north america intersil corporation unit 1804 18/f guangdong water bldg. 83 austin road tst, kowloon hong kong tel: +852-2723-6339 fax: +852-2730-1433 asia elantec 675 trade zone blvd. milpitas, ca 95035 tel: 408-945-1323 800: 888-elantec fax: 408-945-9305 sales office headquarters effective may 15, 2002, elantec, a leader in high performanc e analog products, is now a part of intersil corporation.

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