3-181 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 1999 ha-2600/883 ha-2602/883 wideband, high impedance operational ampli?rs description ha-2600/883 and ha-2602/883 are internally compensated bipolar operational ampli?rs that feature very high input impedance coupled with wideband ac performance. the high resistance of the input stage is complemented by low offset voltage (4mv max at +25 o c for ha-2600/883) and low bias and offset current (10na max at +25 o c for ha-2600/ 883) to facilitate accurate signal processing. offset voltage can be reduced further by means of an external nulling potentiometer. the 4v/ s minimum slew rate at +25 o c and the minimum open loop gain of 100kv/v at +25 o c enables the ha-2600/883 to perform high gain ampli?ation of fast, wideband signals. these dynamic characteristics, coupled with fast settling times, make these ampli?rs ideally suited to pulse ampli?ation designs as well as high frequency or video applications. the frequency response of the ampli?r can be tailored to exact design requirements by means of an external bandwidth control capacitor. other high perfor- mance designs such as high gain, low distortion audio ampli?rs, high-q and wideband active ?ters and high speed comparators, are excellent uses of this part. ordering information part number temperature range package ha2-2600/883 -55 o c to +125 o c 8 pin can ha7-2600/883 -55 o c to +125 o c 8 lead cerdip ha2-2602/883 -55 o c to +125 o c 8 pin can ha7-2602/883 -55 o c to +125 o c 8 lead cerdip features this circuit is processed in accordance to mil-std- 883 and is fully conformant under the provisions of paragraph 1.2.1. high input impedance (ha-2600/883). . . . 100m ? (min) 500m ? (typ) high slew rate . . . . . . . . . . . . . . . . . . . . . . . 4v/ s (min) 7v/ s (typ) low input bias current (ha-2600/883). . . . 10na (max) 1na (typ) low input offset current (ha-2600/883) . . . 4mv (max) wide unity gain bandwidth . . . . . . . . . . . 12mhz (typ) output short circuit protection applications video ampli?r pulse ampli?r high-q active filters high speed comparators low distortion oscillators july 1994 spec number 511005-883 file number 3700 pinouts ha-2600/883, ha-2602/883 (cerdip) top view ha-2600/883, ha-2602/883 (metal can) top view 1 2 3 4 8 7 6 5 comp v+ out bal + - bal -in +in v- 2 4 6 1 3 7 5 8 comp out -in v- bal +in v+ bal + -
3-182 speci?ations ha-2600/883, ha-2602/883 absolute maximum ratings thermal information voltage between v+ and v- terminals . . . . . . . . . . . . . . . . . . . . 40v differential input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12v voltage at either input terminal . . . . . . . . . . . . . . . . . . . . . . v+ to v- peak output current . . . . . . . . . . . . . . .full short circuit protection junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c storage temperature range . . . . . . . . . . . . . . . . . -65 o c to +150 o c esd rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000v lead temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . +300 o c thermal resistance ja jc cerdip package . . . . . . . . . . . . . . . . . . . 115 o c/w 28 o c/w metal can package . . . . . . . . . . . . . . . . . 160 o c/w 75 o c/w package power dissipation limit at +75 o c for t j +175 o c cerdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mw metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mw package power dissipation derating factor above +75 o c cersdip package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mw/ o c metal can package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mw/ o c caution: stresses above those listed in ?bsolute maximum ratings?may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not im plied. operating conditions operating temperature range . . . . . . . . . . . . . . . . -55 o c to +125 o c operating supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15v v incm 1/2 (v+ - v-) r l 2k ? table 1. dc electrical performance characteristics device tested at: v supply = 15v, r source = 100 ? , r load = 500k ? , v out = 0v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature ha-2600/883 ha-2602/883 units min max min max input offset voltage v io v cm = 0v 1 +25 o c -4 4 -5 5 mv 2, 3 +125 o c, -55 o c -6 6 -7 7 mv input bias current +i b v cm = 0v, +r s = 100k ? , -r s = 100 ? 1 +25 o c -10 10 -25 25 na 2, 3 +125 o c, -55 o c -30 30 -60 60 na -i b v cm = 0v, +r s = 100 ? , -r s = 100k ? 1 +25 o c -10 10 -25 25 na 2, 3 +125 o c, -55 o c -30 30 -60 60 na input offset current i io v cm = 0v, +r s = 100k ? , -r s = 100k ? 1 +25 o c -10 10 -25 25 na 2, 3 +125 o c, -55 o c -30 30 -60 60 na common mode range +cmr v+ = +4v, v- = -26v 1 +25 o c11-11-v 2, 3 +125 o c, -55 o c11 - 11 - v -cmr v+ = +26v, v- = -4v 1 +25 o c - -11 - -11 v 2, 3 +125 o c, -55 o c - -11 - -11 v large signal voltage gain +a vol v out = 0v and +10v, r l = 2k ? 4 +25 o c 100 - 80 - kv/v 5, 6 +125 o c, -55 o c 70 - 60 - kv/v -a vol v out = 0v and -10v, r l = 2k ? 4 +25 o c 100 - 80 - kv/v 5, 6 +125 o c, -55 o c 70 - 60 - kv/v common mode rejection ratio +cmrr ? v cm = +10v, v+ = +5v, v- = -25v, v out = -10v 1 +25 o c 80 - 74 - db 2, 3 +125 o c, -55 o c 80 - 74 - db -cmrr ? v cm = -10v, v+ = +25v, v- = -5v, v out = +10v 1 +25 o c 80 - 74 - db 2, 3 +125 o c, -55 o c 80 - 74 - db output voltage swing +v out r l = 2k ? 4 +25 o c10-10-v 5, 6 +125 o c, -55 o c10 - 10 - v -v out r l = 2k ? 4 +25 o c - -10 - -10 v 5, 6 +125 o c, -55 o c - -10 - -10 v spec number 511005-883
3-183 spec number 511005-883 speci?ations ha-2600/883, ha-2602/883 output current +i out v out = -10v 4 +25 o c 15 - 10 - ma 5, 6 +125 o c, -55 o c 10 - 7.5 - ma -i out v out = +10v 4 +25 o c - -15 - -10 ma 5, 6 +125 o c, -55 o c - -10 - -7.5 ma quiescent power supply current +i cc v out = 0v, i out = 0ma 1 +25 o c - 3.7 - 3.7 ma 2, 3 +125 o c, -55 o c - 4.0 - 4.0 ma -i cc v out = 0v, i out = 0ma 1 +25 o c -3.7 - -3.7 - ma 2, 3 +125 o c, -55 o c -4.0 - -4.0 - ma power supply rejection ratio +psrr ? v sup = 5v, v+ = +10v, v- = -15v, v+ = +20v, v- = -15v 1 +25 o c 80 - 74 - db 2, 3 +125 o c, -55 o c 80 - 74 - db -psrr ? v sup = 5v, v+ = +15v, v- = -10v, v+ = +15v, v- = -20v 1 +25 o c 80 - 74 - db 2, 3 +125 o c, -55 o c 80 - 74 - db offset voltage adjustment +v io adj note 1 1 +25 o cv io -1 - v io -1 - mv 2, 3 +125 o c, -55 o cv io -1 - v io -1 - mv -v io adj note 1 1 +25 o cv io +1 - v io +1 - mv 2, 3 +125 o c, -55 o cv io +1 - v io +1 - mv note: 1. offset adjustment range is [v io (measured) 1mv] minimum referred to output. this test is for functionality only to assure adjustment through 0v. table 2. ac electrical performance characteristics device tested at: v supply = 15v, r source = 50 ? , r load = 2k ? , c load = 50pf, a vcl = +1v/v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature ha-2600/883 ha-2602/883 units min max min max slew rate +sr v out = -5v to +5v 7 +25 o c4-4-v/ s 8a, 8b +125 o c, -55 o c3 - 3 -v/ s -sr v out = +5v to -5v 7 +25 o c4-4-v/ s 8a, 8b +125 o c, -55 o c3 - 3 -v/ s rise and fall time t r v out = 0 to +200mv 10% t r 90% 7 +25 o c - 60 - 60 ns 8a, 8b +125 o c, -55 o c - 70 - 70 ns t f v out = 0 to -200mv 10% t f 90% 7 +25 o c - 60 - 60 ns 8a, 8b +125 o c, -55 o c - 70 - 70 ns overshoot +os v out = 0 to +200mv 7 +25 o c-40-40% 8a, 8b +125 o c, -55 o c- 50 - 50% -os v out = 0 to -200mv 7 +25 o c-40-40% 8a, 8b +125 o c, -55 o c- 50 - 50% table 1. dc electrical performance characteristics (continued) device tested at: v supply = 15v, r source = 100 ? , r load = 500k ? , v out = 0v, unless otherwise speci?d. parameters symbol conditions group a subgroups temperature ha-2600/883 ha-2602/883 units min max min max
3-184 spec number 511005-883 speci?ations ha-2600/883, ha-2602/883 table 3. electrical performance characteristics device characterized at: v supply = 15v, r load = 2k ? , c load = 50pf, unless otherwise speci?d. parameters symbol conditions notes temperature ha-2600/883 ha-2602/883 units min max min max differential input resistance r in v cm = 0v 1 +25 o c 100 - 40 - m ? full power bandwidth fpbw v peak = 10v 1, 2 +25 o c 50 - 50 - khz minimum closed loop stable gain clsg r l = 2k ? , c l = 50pf 1 -55 o c to +125 o c 1 - 1 - v/v output short circuit current +i sc v out = 1v, r l = 10 ? 1 +25 o c - 50 - 50 ma 1 +125 o c - 45 - 45 ma 1 -55 o c - 60 - 60 ma -i sc v out = -1v, r l = 10 ? 1 +25 o c -50 - -50 - ma 1 +125 o c -45 - -45 - ma 1 -55 o c -60 -60 - ma quiescent power consumption pc v out = 0v, i out = 0ma 1, 3 -55 o c to +125 o c - 120 - 120 mw notes: 1. parameters listed in table 3 are controlled via design or process parameters and are not directly tested at ?al production. these param- eters are lab characterized upon initial design release, or upon design changes. these parameters are guaranteed by characteriz ation based upon data from multiple production runs which re?ct lot to lot and within lot variation. 2. full power bandwidth guarantee based on slew rate measurement using fpbw = slew rate/(2 v peak ). 3. quiescent power consumption based upon quiescent supply current test maximum. (no load on outputs.) table 4. electrical test requirements mil-std-883 test requirements subgroups (see tables 1 and 2) interim electrical parameters (pre burn-in) 1 final electrical test parameters 1 (note 1), 2, 3, 4, 5, 6, 7, 8a, 8b group a test requirements 1, 2, 3, 4, 5, 6, 7, 8a, 8b groups c and d endpoints 1 note: 1. pda applies to subgroup 1 only.
3-185 ha-2600/883, ha-2602/883 die characteristics die dimensions: 69 x 56 x 19 mils 1 mils 1750 x 1420 x 483 m 25.4 m metallization: type: al, 1% cu thickness: 16k ? 2k ? glassivation: type: nitride (si3n4) over silox (sio2, 5% phos.) silox thickness: 12k ? 2k ? nitride thickness: 3.5k ? 1.5k ? worst case current density: 3.9 x 10 4 a/cm 2 substrate potential (powered up): unbiased transistor count: ha-2600/883: 140 ha-2602/883: 140 process: bipolar dielectric isolation metallization mask layout ha-2600/883, ha-2602/883 +in -in bal comp v+ out bal v- spec number 511005-883
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