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IC-MFN 8-fold fail-safe n-fet driver rev a2, page 1/ 13 features ? 8-fold level shift up to 40 v output voltage ? inputs compatible with ttl and cmos levels, 40 v voltage proof ? level shift con?gurable to 5 v, 10 v or supply voltage ? short-circuit-proof push-pull current sources for driving fets slowly ? safe low output state with single errors ? ground and supply voltage monitor ? status output for error and system diagnostics ? temperature range from -40 to 125 c ? protective esd circuitry applications ? operation of n-fets from 1.8 v, 2.5 v, 3.3 v or 5 v systems packages qfn24 block diagram copyright ? 2007 ic-haus http://www.ichaus.com vb vbr in8 in3in4 in5 in6 in7 en5en10 enfs in1 in2 ic?mfn out2 out1out3 out4 out5 out6 out7 out8 nok gndr gnd supply, ground andtemperature monitor
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 2/ 13 description IC-MFN is a monolithically integrated, 8-channel level adjustment device which drives n-channel fets. the internal circuit blocks have been designed in such a way that with single errors, such as open pins (vb, vbr, gnd, gndr) or the short-circuiting of two outputs, IC-MFNs output stages switch to a prede?ned, safe low state. externally connected n- channel fet are thus shut down safely in the event of a single error. the inputs of the eight channels consist of a schmitt trigger with a pull-down current source and are com- patible with ttl and cmos levels and are voltage- proof up to 40 v. the eight channels have a current- limited push-pull output stage and a pull-down resis- tor at the output. the hi-level at one of the inputs en5, en10 or enfs de?nes the output hi-level and enables the outputs. the output hi-level is disabled with the lo-level at all inputs en5, en10 and enfs or with the hi-level at more than one input. IC-MFN monitors the supply voltage at vb and vbr pin and the voltages at the two ground pins gnd and gndr. both power supply pins vb and vbr and both pins gnd and gndr must be connected to- gether externally in order to guarantee the safe low state of the output stages in the event of error. should the supply voltage at vb undershoot a prede- ?ned threshold, the voltage monitor causes the out- puts to be actively tied to gnd via the lowside tran- sistors. if the ground potential ceases to be applied to gnd, the outputs are tied to gndr by pull-down resistors. if the connection between the ground potential and the gnd pin is disrupted, the highside and lowside transistors of the output stages are shut down and the outputs tied to gndr via the pull-down resistors. if on the other hand the connection between ground potential and the gndr pin is disrupted, only the output stage highside transistors are shut down; the outputs are then actively tied to gnd via the lowside transistors. pull-down currents provide the safe lo-level at open inputs in1. . . 8, en5, en10 and enfs. the pull- down currents have two stages in order to minimize power dissipation with enhanced noise immunity. the status of the device is indicated with the open- drain pin nok and can be used for system diagnos- tics. temperature monitoring protects the device from too high power dissipation. the device is protected against destruction by esd.
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 3/ 13 packages qfn24 4 mm x 4 mm to jedec pin configuration qfn24 (top view) pin functions no. name function 1 out1 output channel 1 2 vb supply voltage 3 vbr supply voltage (r) 4 en5 enable input hi-level = 5v 5 en10 enable input hi-level = 10v 6 in1 input channel 1 7 in2 input channel 2 8 in3 input channel 3 9 in4 input channel 4 10 in5 input channel 5 11 in6 input channel 6 12 in7 input channel 7 13 in8 input channel 8 14 nok output inverted status 15 enfs enable input full scale hi-level = vb 16 gndr ground (r) 17 gnd ground 18 out8 output channel 8 19 out7 output channel 7 20 out6 output channel 6 21 out5 output channel 5 22 out4 output channel 4 23 out3 output channel 3 24 out2 output channel 2 tp tp thermal-pad the thermal pad is to be connected to a ground plane on the pcb. connections between gnd, gndr and the ground plane should be conciled to system fmea aspects. 7 8 9 10 11 1 2 3 4 5 13 14 15 21 22 6 12 16 17 19 20 18 23 24 mfn code... ...
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 4/ 13 absolute maximum ratings beyond these values damage may occur; device operation is not guaranteed. item symbol parameter conditions unit no. min. max. g001 vb, vbr supply voltage -0.3 40 v g002 v() voltage at out1...8, nok -0.3 40 v g003 v() voltage at in1...8, en5, en10, enfs -0.3 40 v g004 v(gndr) voltage at gndr referenced to gnd -0.3 0.3 v g005 v(gnd) voltage at gnd referenced to gndr -0.3 0.3 v g006 v(vbr) voltage at vbr referenced to vb -0.3 0.3 v g007 v(vb) voltage at vb referenced to vbr -0.3 0.3 v g008 imx() current in out1...8, nok, in1...8, en5, en10, enfs -10 10 ma g009 imx() current in vb, vbr -10 80 ma g010 imx() current in gnd, gndr -80 10 ma g011 vd() esd susceptibility at all pins hbm 100 pf discharged through 1.5 k 2 kv g012 tj operating junction temperature -40 140 c g013 ts storage temperature range -55 125 c thermal data operating conditions: vb = vbr = 4.5. . . 40 v, gnd = gndr = 0 v item symbol parameter conditions unit no. min. typ. max. t01 ta operating ambient temperature range -40 125 c t02 rthja thermal resistance chip/ambient smd assembly, no additional cooling areas. 75 k/w all voltages are referenced to ground unless otherwise stated. all currents into the device pins are positive; all currents out of the device pins are negative.
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 5/ 13 electrical characteristics operating conditions: vb = vbr = 4.5. . . 40 v, gnd = gndr = 0 v, tj = -40...125 c unless otherwise stated item symbol parameter conditions tj fig. unit no. c min. typ. max. total device 001 vb permissible supply voltage 4.5 40 v 002 i(vb) supply current in vb no load, en5 = lo,en10 = lo, 1.2 3.6 ma enfs = lo 003 i(vb) supply current in vb no load, en5 = hi,en10 = lo, 3.2 6.6 ma enfs = lo, in1. . . 8 = hi, vb = 8. . . 40 v 004 i(vb) supply current in vb no load, en5 = lo, en10 = hi, 3.2 6.8 ma enfs = lo, in1. . . 8 = hi, vb = 13. . . 40 v 005 i(vb) supply current in vb no load, en5 = lo, en10 = lo, 1.3 6.6 ma enfs = hi, in1. . . 8 = hi, vb = 4.5. . . 40 v 006 i(vbr) supply current in vbr tbd ma 007 i(gnd) current in gnd no load -7 ma 008 i(gndr) current in gndr no load, all outx = hi tbd ma current driver out1...8 101 vc(outx)hi clamp voltage hi i() = 10 ma 42 60 v 102 vc(outx)lo clamp voltage lo referenced to the lower voltage of gnd, gndr i() = -10 ma -2 -0.4 v 103 vs(outx)hi saturation voltage hi referenced to vb vs()hi = vb C v(), inx = hi, enfs = hi; 0.2 v i() = -0.5 ma 0.8 v i() = -2 ma 104 vs(outx)lo saturation voltage lo referenced to gnd i() = 0.5 ma 0.2 v i() = 2 ma 0.8 v 105 vr(outx) output voltage regulated, no load en5 = hi, inx = hi, i() = 0 ma 4.7 5 5.3 v 106 vr(outx) output voltage regulated, no load en10 = hi, inx = hi, i() = 0 ma 9.4 10 10.6 v 107 ri(outx) output resistance en10 = hi or en5 = hi, inx = hi, i() = 2 ma 100 500 108 vl(outx) output voltage i(outx) = 2 a, gnd open 600 mv 109 ipd(outx) pull-down current v(outx) = 1 v, gnd open 30 120 a 110 rpd(outx) pull-down resistor at outx referenced to gndr vb, vbr, v(outx) = 10 v, gnd open 50 300 k 111 rpd(outx) pull-down resistor at outx referenced to gndr vb, vbr, v(outx) = 40 v, gnd open 100 600 k 112 isc(outx)lo short circuit current lo v() = 0.8 v...vb 2 3.6 10 ma 113 isc(outx)hi short circuit current hi v() = 0...vb C 0.8 v -10 -3 -2 ma 114 vsh(outx) output voltage at short circuit of two outputs en5 = hi, 1 v at two different input signals hi and lo 115 vsh(outx) output voltage at short circuit of two outputs en10 = hi oder enfs = hi, 1.3 v at two different input signals hi and lo 116 vt(outx)hi threshold voltage hi monitoring comparator vt() = vr() C v() or 0.8 v vt() = vb C v() 117 vt(outx)lo threshold voltage lo monitoring comparator vt() = vr() C v() or 2.2 v vt() = vb C v() 118 vt()hys hysteresis vt()hys = vt()lo C vt()hi 50 300 mv
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 6/ 13 electrical characteristics operating conditions: vb = vbr = 4.5. . . 40 v, gnd = gndr = 0 v, tj = -40...125 c unless otherwise stated item symbol parameter conditions tj fig. unit no. c min. typ. max. input in1...8, en5, en10, enfs 201 vc()hi clamp voltage hi i() = 10 ma 42 60 v 202 vc()lo clamp voltage lo referenced to the lower voltage of gnd, gndr i() = -10 ma -2 -0.4 v 203 vt()hi threshold voltage hi 1.15 1.4 v 204 vt()lo threshold voltage lo 0.8 1.05 v 205 vt()hys input hysteresis vt()hys = vt()hi C vt()lo 200 400 mv 206 ipd1() pull-down current 1 0.4 v < v() < vt()hi 5 75 225 350 a 207 ipd2() pull-down current 2 v() > 1.4 v 5 20 45 70 a 208 cin() input capacitance 20 pf 209 il() leakage current vb, vbr = 0 v, v() = 0..40 v -10 10 a supply and temperature monitor 301 vbon turn-on threshold vb 3.8 4.3 v 302 vboff turn-off threshold vb decreasing voltage vb 3.4 4.0 v 303 vbhys hysteresis vbhys = vbon C vboff 200 mv 304 toff turn-off temperature increasing temperature 145 160 180 c 305 ton turn-on temperature decreasing temperature 130 147 170 c 306 thys hysteresis thys = toff C ton 13 c ground monitor gnd, gndr 401 vt()hi threshold voltage hi gnd monitor referenced to gndr 270 mv 402 vt()lo threshold voltage lo gnd monitor referenced to gndr 50 mv 403 vt()hys hysteresis vt()hys = vt()hi C vt()lo 5 100 mv 404 vt()hi threshold voltage hi gndr monitor referenced to gnd 270 mv 405 vt()lo threshold voltage lo gndr monitor referenced to gnd 50 mv 406 vt()hys hysteresis vt()hys = vt()hi C vt()lo 5 100 mv 407 vc()hi clamp voltage gndr hi referenced to gnd i() = 1 ma 0.4 2 v 408 vc()lo clamp voltage gndr lo referenced to gnd i() = -1 ma -2 -0.4 v status output nok 501 vc(nok)hi clamp voltage hi i() = 10 ma 42 60 v 502 vc(nok)lo clamp voltage lo referenced to the lower voltage of gnd, gndr i() = -10 ma -2 -0.4 v 503 il(nok) leakage current gnd < v(nok) < vb -20 20 a 504 vs(nok)lo saturation voltage lo referenced to gnd i() = 0.5 ma 0.2 v i() = 2 ma 0.8 v 505 isc(nok)lo short circuit current lo v() = 0.8 v...vb 2 3 10 ma supply monitor vb, vbr 601 vt(vb)hi threshold voltage hi vb monitor referenced to vbr 270 mv 602 vt(vb)lo threshold voltage lo vb monitor referenced to vbr 50 mv 603 vt(vb)hys hysteresis vt()hys = vt()hi C vt()lo 5 100 mv 604 vt(vbr)hi threshold voltage hi vbr monitor referenced to vb 270 mv 605 vt(vbr)lo threshold voltage lo vbr monitor referenced to vb 50 606 vt(vbr)hys hysteresis vt()hys = vt()hi C vt()lo 5 100 mv 607 vc(vbr)hi clamp voltage hi i() = 1 ma, vc() = v(vbr) - v(vb) 0.4 2 v 608 vc(vbr)lo clamp voltage lo i() = -1 ma, vc() = v(vbr) - v(vb) -2 -0.4 v
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 7/ 13 electrical characteristics operating conditions: vb = vbr = 4.5. . . 40 v, gnd = gndr = 0 v, tj = -40...125 c unless otherwise stated item symbol parameter conditions tj fig. unit no. c min. typ. max. testmode en5, en10, enfs 701 vt()hi threshold voltage hi disable test en5 = en10 = enfs -60 mv 702 vt()lo threshold voltage lo enable test en5 = en10 = enfs -320 mv 703 vt()hys hysteresis vt()hys = vt()hi C vt()lo 50 160 mv timing 901 tp(outx) propagation delay inx, en5 outx ({inx,en5}lo hi) 90 %outx 1 0.45 1.1 s ({inx,en5}hi lo) 10 %outx cload() = 100 pf 902 tp(outx) propagation delay inx, en5 outx ({inx,en5}lo hi) 90 %outx 1 1.3 2.4 s ({inx,en5}hi lo) 10 %outx cload() = 1 nf 903 tp(outx) propagation delay inx, en5 outx ({inx,en5}lo hi) 90 %outx 1 2.2 3.7 s ({inx,en5}hi lo) 10 %outx cload() = 2 nf 904 tp(outx) propagation delay inx, en5 outx ({inx,en5}lo hi) 90 %outx 1 5 8.1 s ({inx,en5}hi lo) 10 %outx cload() = 5 nf 905 tp(outx) propagation delay inx, en10 outx ({inx,en10}lo hi) 90 %outx 1 0.7 1.6 s ({inx,en10}hi lo) 10 %outx cload() = 100 pf 906 tp(outx) propagation delay inx, en10 outx ({inx,en10}lo hi) 90 %outx 1 2.3 4.1 s ({inx,en10}hi lo) 10 %outx cload() = 1 nf 907 tp(outx) propagation delay inx, en10 outx ({inx,en10}lo hi) 90 %outx 1 3.9 7.1 s ({inx,en10}hi lo) 10 %outx cload() = 2 nf 908 tp(outx) propagation delay inx, en10 outx ({inx,en10}lo hi) 90 %outx 1 9 16 s ({inx,en10}hi lo) 10 %outx cload() = 5 nf 909 tp(outx) propagation delay inx, enfs outx ({inx,enfs}lo hi) 90 %outx 1 1.4 3.1 s ({inx,enfs}hi lo) 10 %outx cload() = 100 pf 910 tp(outx) propagation delay inx, enfs outx ({inx,enfs}lo hi) 90 %outx 1 5.2 9.8 s ({inx,enfs}hi lo) 10 %outx cload() = 1 nf 911 tp(outx) propagation delay inx, enfs outx ({inx,enfs}lo hi) 90 %outx 1 9.2 16.7 s ({inx,enfs}hi lo) 10 %outx cload() = 2 nf 912 tp(outx) propagation delay inx, enfs outx ({inx,enfs}lo hi) 90 %outx 1 20 35 s ({inx,enfs}hi lo) 10 %outx cload() = 5 nf 913 dv()/dt slew rate vb = 24 v, cload() = 100 pf 7 18 v/s 914 dv()/dt slew rate vb = 24 v, cload() = 1 nf 2.2 4.5 v/s 915 dv()/dt slew rate vb = 24 v, cload() = 2 nf 1.2 2.5 v/s 916 dv()/dt slew rate vb = 24 v, cload() = 5 nf 0.5 1.2 v/s
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 8/ 13 electrical characteristics: diagrams figure 1: propagation delays t v(inx, en5, en10, enfs) t v(outx) v()hi 90%10% 0 vt()hivt()lo 0 tp(outx) tp(outx)
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 9/ 13 description of functions hi-level output con?guration the device IC-MFN has three adjustable hi-levels for driving n-channel fets. the con?gured hi-level is com- mon to all outputs outx and the maxmimum level is the power supply vb potential. the hi-level con?gura- tion inputs are used simultaneous for enabling the hi- level at the outputs outx. the hi-level at exactly one input en5, en10 or enfs con?gure the voltage of hi- level and enable the outputs. if more than one of these inputs have hi-level the outputs remains disabled. the hi-level 5 v (con?gured with en5 = hi) and 10 v (con- ?gured with en10 = hi) are internally generated by a voltage reference and regulated. the hi-level vb (con- ?gured with enfs = hi) is an unregulated connection to vb. in this case the voltage swing depends directly from the power supply vb. output characteristics of the highside transistor the highside output transistors at the eight channels demonstrate a resistive behavior with low voltage (vb C v(outx)) and behave as a current source with ?nite output resistance with higher voltages. figure 2: output characteristic of the highside tran- sistor at outx output characteristic of the regulated push-pull- output at outx the hi-level 5 v and 10 v is generated with a regulated push-pull output and demonstrate a resistive behav- ior with low voltage changes and behave as a current source with ?nite output resistance with higher voltage changes. figure 3: output characteristic of the regulated push-pull-output at outx output characteristic of the lowside transistor the lowside output transistors at the eight channels demonstrate a resistive behavior with low voltage v(outx) and behave as a current sink with ?nite out- put resistance with higher voltages. figure 4: output characteristic of the lowside tran- sistor at outx status output nok the status output nok is a current limited 40 v proof open-drain output. the output transistor is switched on if the hi-level of the outputs outx are enabled with exactly one pin enx, the outputs have reached the volt- age levels de?ned by the inputs inx, the power supply voltage is above the power-on threshold, the tempera- ture is below the switch off temperature and all power supply pins are connected. [ma] i(outx) v(outx) 3.6 [v] 1 2 3 4 5 400 [ma] i(outx) v(outx)?vr(outx) 3.6 ?3 [v] ?0.5 0.5 ?1 1 ?1.5 1.5 ?2 2 ?2.5 2.5 165 [ma] i(outx) vb ? v(outx) ?3 [v] 1 2 3 4 5 ?400
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 10/ 13 pull-down currents in order to enhance noise immunity with limited power dissipation at inputs inx, en5, en10 and enfs the pull-down currents at these pins have two stages. with a rise in voltage at input pins inx, en5, en10 und enfs the pull-down current remains high until vt()hi (electrical characteristics no. 203); above this thresh- old the device switches to a lower pull-down current. if the voltage falls below vt()lo (electrical character- istics no. 204), the device switches back to a higher pull-down current. figure 5: pull-down currents at inx, en5, en10 and enfs detecting single errors if single errors are detected, safety-relevant applica- tions require externally connected switching transistors to be speci?cally shut down. single errors can occur when a pin is open (due to a disconnected bonding wire or a bad solder connection, for example) or when two pins are short-circuited. when two output of different logic levels are short- circuited, the driving capability of the lowside driver will predominate, keeping the connected n-channel fets in a safe shutdown state. with open pins vb, vbr, gnd or gndr IC-MFN switches the output stages to a safe, prede?ned low state via pull-down resistors and current sources at the outputs, subsequently shutting down any externally connected n-channel fets. loss of vb potential if power supply potential is no longer applied to the vb- pin, the output stage highside drivers are shut down and the outputs actively tied to gnd via the lowside drivers. loss of vbr potential if power supply potential is no longer applied to the vbr-pin, the output stage highside drivers are shut down and the outputs actively tied to gnd via the low- side drivers. loss of gndr potential if ground potential is no longer applied to the gndr- pin, the output stage highside drivers are shut down and the outputs actively tied to gnd via the lowside drivers. figure 6: output characeristics at outx with loss of vb, vbr or gndr loss of gnd potential if ground potential is not longer applied to gnd, the output stages are shut down and the outputs tied to gndr via current sources and internal pull-down re- sistors with a typical value of 200 k . figure 7: output characeristics at outx with loss of gnd [ma] i(outx) v(outx) 3.6 [v] 1 2 3 4 5 400 [ a] i(outx) v(outx) 80 [v] 1 2 3 4 5 200 k v() vt()lo vt()hi ipd() v() increasing v() decreasing ipd1() ipd2()
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 11/ 13 application notes driving an n-channel mosfet one typical ?eld of application for IC-MFN is in the op- eration of n-fets with microprocessor output signals, as shown in figure 8 . figure 8: driving an n-channel mosfet slowly switching of a transistor is done with a current limited driver. figure 9 shows the different phases of a turn on process with resitive load. in section t0 to t1 the gate of the transistors is loaded to the threshold voltage vth(fet) and is a dead time. in section t1 to t2 the gate voltage keeps nearly constant (miller-plateau) during the drain voltage slope. the slew rate depends on the current of the driver and the gate-drain capaci- tor of the transistor. in section t2 to t3 the gate voltage reach the static value. the transistor thus goes low ohmic and minimizes the power dissipation. the equa- tions 1 to 4 are simpli?ed and give an estimation of the timing on the basis of data from the speci?cations of the device IC-MFN and the used transistor. the turn off looks similar to the turn on but with reverse run trough. figure 9: on switching of a transistor t t0 .. t1 [ s ] = c iss @( v ds = hi ) v th ( fet ) ? isc ( outx ) hi (1) t t1 .. t2 [ s ] = c rss @( v ds = hi ) vb ? isc ( outx ) hi (2) t t2 .. t3 [ s ] = c iss @( v ds = lo ) vr ( outx ) ? v th ( fet ) ? isc ( outx ) hi (3) t on = t t0 .. t1 + t t1 .. t2 + t t2 .. t3 (4) c iss = c gs + c gd = voltage dependent gate-source and gate-drain capacitor [nf] c rss = c gd = voltage dependent gate-drain capacitor [nf] isc ( outx ) lo = short circuit current lo at outx [ma] t t0 .. t1 = dead time [s] t t1 .. t2 = slope time at drain (miller-plateau) [s] t t2 .. t3 = time to reach static gate voltage [s] t on = overall turn on time [s] vb = power supply vb [v] vr ( outx ) = con?gured static turn on voltage at outx [v] v th ( fet ) = threshold of the transistor [v] t t vd v(outx) vb vth(fet) vr() t0 t1 t2 t3 vb vbr vb vb 3.3v microcontroller rl vd in8 in3in4 in5 in6 in7 en5en10 enfs in1 in2 ic?mfn out2 out1out3 out4 out5 out6 out7 out8 nok gndr gnd supply, ground andtemperature monitor
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 12/ 13 example turn on calculation with following estimations: c iss @( v ds = 24 v ) = 1.5 nf c iss @( v ds = 1 v ) = 3 nf c rss @( v ds = 24 v ) = 0.3 nf isc ( outx ) hi = -4 ma vb = 24 v vr ( outx ) = 10 v v th ( fet ) = 3 v from this follows: t t0 .. t1 = 1.13 s t t1 .. t2 = 1.8 s t t2 .. t3 = 5.25 s t on = 8.18 s the slew rate at the drain of transistor is: 13.3 v/s figure 10 shows the turn on and off at one channel with pin inx. the pulse duration at pin nok, especially at turn on, can be used for monitoring the connected transistor and the load. figure 10: turn on and off one channel with inx figure 11: circuit diagram one channel with moni- toring comparator this speci?cation is for a newly developed product. ic-haus therefore reserves the right to change or update, without notice, any information contained herein, design and speci?cation; and to discontinue or limit production or distribution of any product versions. please contact ic-haus to ascertain the current data. copying C even as an excerpt C is only permitted with ic-haus approval in writing and precise reference to source. ic-haus does not warrant the accuracy, completeness or timeliness of the speci?cation on this site and does not assume liability for any errors or omissions in the materials. the data speci?ed is intended solely for the purpose of product description. no representations or warranties, either express or implied, of merchantability, ?tness for a particular purpose or of any other nature are made hereunder with respect to information/speci?cation or the products to which information refers and no guarantee with respect to compliance to the intended use is given. in particular, this also applies to the stated possible applications or areas of applications of the product. ic-haus conveys no patent, copyright, mask work right or other trade mark right to this product. ic-haus assumes no liability for any patent and/or other trade mark rights of a third party resulting from processing or handling of the product and/or any other use of the product. inx v(outx) vd v(nok)t
IC-MFN 8-fold fail-safe n-fet driver rev a2, page 13/ 13 ordering information type package order designation IC-MFN qfn24 4 mm IC-MFN qfn24 for technical support, information about prices and terms of delivery please contact: ic-haus gmbh tel.: +49 (61 35) 92 92-0 am kuemmerling 18 fax: +49 (61 35) 92 92-192 d-55294 bodenheim web: http://www.ichaus.com germany e-mail: sales@ichaus.com appointed local distributors: http://www.ichaus.de/support_distributors.php

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