repetitive avalanche and dv/dt rated irhna7z60 hexfet ? transistor IRHNA8Z60 pd - 91701b product summary part number bv dss r ds(on) i d irhna7z60 30v 0.009 w 75*a IRHNA8Z60 30v 0.009 w 75*a features: n radiation hardened up to 1 x 10 6 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical test conditions n repetitive avalanche rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n surface mount n lightweight 30 volt, 0.009 w w w w w , rad hard hexfet international rectifiers rad hard technology hexfets demonstrate immunity to see failure. addi- tionally, under identical pre- and post-irradiation test conditions, international rectifiers rad hard hexfets retain identical electrical specifications up to 1 x 10 5 rads (si) total dose. no compensation in gate drive circuitry is required. these devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal opera- tion within a few microseconds. since the rad hard process utilizes international rectifiers patented hexfet technology, the user can expect the highest quality and reliability in the industry. rad hard hexfet transistors also feature all of the w ell- established advantages of mosfets, such as voltage con- trol, very fast switching, ease of paralleling and temperature stability of the electrical parameters. they are well-suited for applications such as switching power supplies, motor con- trols, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. www.irf.com 1 n-channel mega rad hard absolute maximum ratings parameter irhna7z60, IRHNA8Z60 units i d @ v gs = -12v, t c = 25c continuous drain current 75* i d @ v gs = -12v, t c = 100c continuous drain current 75* i dm pulsed drain current ? 300 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? 75 a e ar repetitive avalanche energy ? 30 mj dv/dt peak diode recovery dv/dt ? 0.35 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 (for 5 sec.) weight 3.3 (typical) g pre-irradiation o c a
irhna7z60, IRHNA8Z60 devices pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 30 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.023 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.009 v gs = 12v, i d =75a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 31 s ( )v ds > 15v, i ds = 75a ? i dss zero gate voltage drain current 25 v ds = 0.8 x max rating,v gs =0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 421 v gs =12v, i d = 75a q gs gate-to-source charge 104 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge 74 t d (on) turn-on delay time 32 v dd = 15v, i d = 75a, t r rise time 370 r g = 2.35 w t d (off) turn-off delay time 150 t f fall time 280 l d internal drain inductance 0.8 l s internal source inductance 2.8 c iss input capacitance 7000 v gs = 0v, v ds = 25v c oss output capacitance 4800 pf f = 1.0mhz c rss reverse transfer capacitance 1800 na w ? nh ns measured from drain lead, 6mm (0.25 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet symbol show- ing the internal inductances. m a source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 75* modified mosfet symbol showing the integral i sm pulse source current (body diode) ? 300 reverse p-n junction rectifier. v sd diode forward voltage 1.8 v t j = 25c, i s = 75a, v gs = 0v ? t rr reverse recovery time 245 ns t j = 25c, i f = 75a, di/dt 100a/ m s q rr reverse recovery charge 1.1 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a * current is limited by internal wire diameter ( die current is 75a , see page 6 ) thermal resistance parameter min typ max units test conditions r thjc junction-to-case 0.42 r thj-pcb junction-to-pc board 1.6 soldered to a 1 inch square clad pc board c/w
irhna7z60, IRHNA8Z60 devices www.irf.com 3 table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min typ max min typ max units test conditions v dss drain-to-source voltage 24 24 v applied drain-to-source voltage during gamma-dot i pp 140 140 a peak radiation induced photo-current di/dt 800 160 a/sec rate of rise of photo-current l 1 0.1 0.8 h circuit inductance required to limit di/dt table 1. low dose rate ? ? irhna7z60 IRHNA8Z60 parameter 100k rads (si) 1000k rads (si) units test conditions ? min max min max bv dss drain-to-source breakdown voltage 30 30 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds =0.8 x max rating, v gs =0v r ds(on)1 static drain-to-source ? .009 .03 w v gs = 12v, i d =15a on-state resistance one v sd diode forward voltage ? 1.8 1.8 v t c = 25c, i s = 15a,v gs = 0v radiation performance of rad hard hexfets international rectifier radiation hardened hexfets are tested to verify their hardness capability. the hard- ness assurance program at international rectifier com- prises three radiation environments. every manufacturing lot is tested in a low dose rate (total dose) environment per mil-std-750, test method 1019 condition a. international rectifier has imposed a standard gate condition of 12 volts per note 5 and a v ds bias condition equal to 80% of the device rated voltage per note 6. pre- and post- irradiation limits of the devices irradiated to 1 x 10 5 rads (si) are identical and are presented in table 1, column 1, irhna7z60. post-irradiation limits of the devices irradiated to1 x10 6 rads (si) are presented in table 1, column 2, IRHNA8Z60. the values in table 1 will be met for ei- ther of the two low dose rate test circuits that are used. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. high dose rate testing may be done on a special re- quest basis using a dose rate up to 1 x 10 12 rads (si)/ sec (see table 2). international rectifier radiation hardened hexfets have been characterized in heavy ion single event effects (see) environments. single event effects char- acterization is shown in table 3. table 3. single event effects let (si) fluence range v ds bias v gs bias ion (mev/mg/cm 2 ) (ions/cm 2 ) (m) (v) (v) cu 28 3x 10 5 43 26 -5 radiation characteristics
irhna7z60, IRHNA8Z60 devices pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 75a 10 100 1000 5 6 7 8 9 10 11 12 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irhna7z60, IRHNA8Z60 devices www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 3000 6000 9000 12000 15000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c oss c iss c rss 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 100 200 300 400 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 75a v = 15v ds v = 24v ds pre-irradiation 10 100 1000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
irhna7z60, IRHNA8Z60 devices pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 40 80 120 160 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irhna7z60, IRHNA8Z60 devices www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v 25 50 75 100 125 150 0 300 600 900 1200 1500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 34a 47a 75a pre-irradiation
irhna7z60, IRHNA8Z60 devices pre-irradiation 8 www.irf.com ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-irradiation) applied and v gs = 0 during irradiation per mll-std -750, method 1019, condition a. ? this test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. ? all pre-irradiation and post-irradiation test conditions are identical to facilitate direct comparison for circuit applications. ? repetitive rating; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. ? v dd = 25v, starting t j = 25c, e as = [0.5 * l * (i l 2 )] peak i l = 75a, v gs = 12v ? i sd 75a, di/dt 94a/ m s, v dd bv dss , t j 150c suggested rg = 0 w ? pulse width 300 m s; duty cycle 2% case outline and dimensions smd-2 smd-2 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 8/98
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