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?2005 sst communications corp. s71280-00-000 1/05 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. preliminary specifications features: ? high gain: ? >26 db gain across 2.4~2.5 ghz over tempera- ture 0c to +80c high linear output power: ? ~27 dbm p1db ? meets 802.11g ofdm acpr requirement up to 23 dbm ? over 20 dbm linear output with total system evm<5% for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 24 dbm high power-added efficiency/low operating current for both 802.11g/b applications ?~19% @ p out = 20 dbm for 802.11g ?~30% @ p out = 24 dbm for 802.11b ultra-low reference current ? ~3 ma total i ref low idle current ?~60 ma i cq high-speed power-up/down ? turn on/off time (10%~90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns high temperature stability ? ~1 db gain/power variation between 0c to +80c low shut-down current (< 0.1 a) simple input/output matching packages available ? 16-contact vqfn (3mm x 3mm) ? non-pb (lead-free) packages available applications: wlan (ieee 802.11g/b) home rf cordless phones 2.4 ghz ism wireless equipment product description the sst12lp10 is a high-performance power amplifier based on the highly-reliable ingap/gaas hbt technology. the sst12lp10 can be easily configured for high-power, high-efficiency applications with superb power-added effi- ciency while operating over the 2.4~2.5 ghz frequency band. it provides over 26 db gain with 19% power-added efficiency @ pout = 20 dbm for 802.11g and 30% power- added efficiency @ pout = 24 dbm for 802.11b. the sst12lp10 has excellent linearity (over 20 dbm linear output with total system evm<5%) which is essential for 54 mbps 802.11g operation. the power amplifier ic also features easy board-level usage along with high-speed power-up/down control and ultra-low reference current (~3 ma). these features cou- pled with low operating current make the sst12lp10 ideal for the final stage power amplification in battery-powered 802.11g/b wlan transmitter applications. the sst12lp10 is offered in 16-contact vqfn package. see figure 1 for pin assignm ents and table 1 for pin descriptions. 2.4 ghz high-linearity power amplifier sst12lp10 sst12lp102.4 ghz high-linearity power amplifier
preliminary specifications 2.4 ghz high-linearit y power amplifier sst12lp10 ?2005 sst communications corp. s71280-00-000 1/05 2 functional blocks 2 56 8 16 vcc 1 15 1 14 vcc b nc 49 11 12 10 13 nc nc vreg 1 vreg 2 nc vcc2 rfou t rfou t nc nc 3 r fin r fin nc bias circuit 7 1280 b1 .1 f unctional b lock d iagram
preliminary s p ecific ations 2.4 ghz high-linearit y p o wer amplifier sst12lp10 3 ? 2 00 5 s s t c o m m u n i ca ti on s c o r p . s7 12 80- 0 0 - 0 0 0 1 / 05 pin assignments figure 1 : p in a ss ig nme n ts fo r 16- c o ntact vq fn pin descriptions t able 1 : p in d es crip t ion symbol pin no. p in name t y pe 1 1 . i=inp u t, o=output fu nctio n gnd 0 groun d t he center pad sh ould b e co nne cted to rf g r oun d with se v e r a l lo w inductance , lo w resistance vias . n c 1 n o co nne ctio n u n c o nne cted p i ns . r f in 2 i rf i npu t, dc d e cou p led r f in 3 i rf i npu t, dc d e cou p led n c 4 n o co nne ctio n u n c o nne cted p i ns . n c 5 n o co nne ctio n u n c o nne cted p i ns . vre g 1 6 pwr 1 st stage id le cur r ent control vre g 2 7 pwr 2 nd stage id le cur r ent control n c 8 n o co nne ctio n u n c o nne cted p i ns . n c 9 n o co nne ctio n u n c o nne cted p i ns . rf out 1 0 o rf output rf out 1 1 o rf output vcc 2 1 2 p o w e r su pp l y pw r p o w er su pp l y , 2n d st ag e n c 13 no co nne ctio n u n c o nne cted p i ns . vc cb 14 p o w e r sup p ly pwr s up ply v o ltag e f o r bias circuit n c 15 no co nne ctio n u n c o nne cted p i ns . vcc 1 1 6 p o w e r su pp l y pw r p o w er su pp l y , 1s t st ag e t1. 0 12 80 56 8 16 vcc 1 15 14 vcc b nc 9 11 12 10 13 nc nc vreg 1 vreg 2 nc vcc2 rfout rfout nc 2 1 4 3 nc r fin r fin nc 7 1280 16-vqfn p1 .0 t op vie w (contacts f acing do wn) rf and dc gnd 0
preliminary specifications 2.4 ghz high-linearit y power amplifier sst12lp10 ?2005 sst communications corp. s71280-00-000 1/05 4 electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 2 for the dc voltage and current spec- ifications. refer to figures 2 through 11 for the rf performance. absolute maximum stress ratings (applied conditions greater than t hose listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater t han those defined in the operational sections of this data sheet is not implied. exposu re to absolute maximum stress rating co nditions may affect device reliability.) input power to pins 2 and 3 (p in ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dbm average output power (p out ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 db m supply voltage at pins 12, 14, 16 (v cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +4.6v reference voltage to pins 6 (v ref1 ) and pin 7 (v ref2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.6v dc supply current (i cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 ma operating temperature (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oc surface mount solder reflow temperature: . . . . . . . . . . . . . . . . . . . . . . . . . ?with-pb? units 1 : 240c for 3 seconds 1. certain ?with-pb? package types are capable of 260c for 3 se conds; please consult the factory for the latest information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ?non -pb? units: 260c for 3 seconds o perating r ange range ambient temp v cc industrial -40c to +85c 3.3v table 2: dc e lectrical c haracteristics symbol parameter min. typ max. unit test conditions v cc supply voltage at pins 12, 14, 16 3.0 3.3 4.2 v i cc supply current for 802.11g, 20 dbm 160 ma for 802.11g, 23 dbm 230 ma for 802.11b, 24 dbm 270 ma i cq idle current for both 802.11b/g to meet evm @ 20.5 dbm 70 ma for only 802.11b to meet acpr @ 22 dbm 50 ma i off shut down current <0.1 a v reg1 reference voltage for 1st stage, without drop resistor 2.70 v v reg2 reference voltage for 2nd stage, without drop resistor 2.70 v t2.0 1280
preliminary specifications 2.4 ghz high-linearity power amplifier sst12lp10 5 ?2005 sst communications corp. s71280-00-000 1/05 table 3: ac e lectrical c haracteristics for c onfiguration symbol parameter min. typ max. unit f l-u frequency range 2400 2500 mhz p out output power @ pin = -4 dbm 11b signals 22 dbm @ pin = -2 dbm 11b signals 24 dbm @ pin = -8 dbm 11g signals 18 dbm @ pin = -6 dbm 11g signals 20 dbm g small signal gain 26 db g var1 gain variation over band (2400~2485 mhz) 1 db g var2 gain ripple over channel (20 mhz) 0.2 db acpr meet 11b spectrum mask 24 dbm meet 11g ofdm 54 mbps spectrum mask 23 dbm added evm @ 20.5 dbm output with 11g ofdm 54 mbps signal 3 3.5 % 2f, 3f, 4f, 5f harmonics at 22 dbm, without trapping capacitors <-40 dbc t3.0 1280
preliminary specifications 2.4 ghz high-linearit y power amplifier sst12lp10 ?2005 sst communications corp. s71280-00-000 1/05 6 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a = 25c figure 2: s-p arameters figure 3: i n - band r eturn l oss figure 4: i n - band g ain f latness s11 -14 -12 -10 -8 -6 -4 -2 0 0123456 s22 -16 -14 -12 -10 -8 -6 -4 -2 0 0123456 s12 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0123456 s21 -40 -30 -20 -10 0 10 20 30 012 3456 1280 s-parms.0.0 s11 -14 -12 -10 -8 -6 -4 -2 0 2.3 2.4 2.5 2.6 1277 in-band-r.0.0 s21 20 25 30 2.3 2.4 2.5 2.6 1280 in-band-g.0.0
preliminary specifications 2.4 ghz high-linearity power amplifier sst12lp10 7 ?2005 sst communications corp. s71280-00-000 1/05 two-tone measurements t est c onditions : v cc = 3.3v, t a = 25c, f1 = 2.45 gh z , f2 = 2.451 gh z figure 5: rf o utput p ower figure 6: g ain vs p out figure 7: i cc vs p out figure 8: im3 vs p out figure 9: h armonics 10 12 14 16 18 20 22 24 26 28 -15 -13 -11 -9 -7 -5 -3 -1 1 p out (dbm) p in (dbm) 1280 poutvspin.0.0 20 21 22 23 24 25 26 27 28 51015202530 pout (dbm) gain (db) 1280 gainvspout.0.0 0 50 100 150 200 250 300 350 400 450 51015202530 pout (dbm ) current consumption (ma) 1280 currvspout.0.0 0 10 20 30 40 50 60 5 10152025 30 pout (dbm ) im3 (dbc) 0 10 20 30 40 50 60 5 10152025 pout (dbm ) im3 (dbc) 1280 im3vspout.0.0 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 pout (dbm) power level (dbc) 2nd harmonic 3rd harmonic 1280 harmonics.0.0
preliminary specifications 2.4 ghz high-linearit y power amplifier sst12lp10 ?2005 sst communications corp. s71280-00-000 1/05 8 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a = 25c, f = 2.45 gh z when not specified figure 10: 802.11 g s pectrum at 20/22/23 d b m , a dded evm @ 2.45 gh z -70 -60 -50 -40 -30 -20 -10 0 2.40e+09 2.42e+09 2.44e+09 2.46e+09 2.48e+09 2.50e+09 frequency (hz) power level (dbc) pout=20dbm pout=22dbm pout=23dbm 1280 spectrum11g.0.0 0 1 2 3 4 5 15 16 17 18 19 20 pout (dbm) added evm (%) 1280 addevm.0.0
preliminary specifications 2.4 ghz high-linearity power amplifier sst12lp10 9 ?2005 sst communications corp. s71280-00-000 1/05 figure 11: 802.11 b s ignal o utput m ask at 24 d b m figure 12: t ypical s chematic for h igh -p ower , h igh -e fficiency 802.11 b / g a pplications -70 -60 -50 -40 -30 -20 -10 0 2.35 2.4 2.45 2.5 2.55 frequency (ghz) power level (dbc) 2.412ghz 2.452ghz 2.482ghz 1280 sigoutmsk.0.0 2 5 6 7 8 11 16 15 1 c2 1.2pf 50 ? /125mil 50 ? rfout c1 47pf c3 10pf c11 47pf c10 2.4p 50 ? /140mil 50 ? rfin vreg1 vreg2 14 13 l1 12nh/0805 c8 0.1 f c9 4.7 f c7 1000pf vcc 3 4 10 c5 100pf c6 0.1 f r2 0 ? * r1 0 ? * * r2 and r3 can be adjusted to fit any reference voltage supply between 2.7~3.3v, e.g. r1=r2=0 ? for vreg1=vreg2=2.7v and r1=100 ? r2=100 ? for vreg1=vreg2=2.8v. bias circuit 12 9 c4 10pf 1280 schematic.0.1 center slug to rf ground
preliminary specifications 2.4 ghz high-linearit y power amplifier sst12lp10 ?2005 sst communications corp. s71280-00-000 1/05 10 product ordering information valid combinations for sst12lp10 sst12lp10-qvc sst12lp10-qvce sst12lp10 evaluation kits sst12lp10-qvc-k sst12lp10-qvce-k note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid combinat ions and to determine availability of new combinations. sst12lp 10 - qvc e sstxx l p xx -xxx x environmental attribute e 1 = non-pb contact (lead) finish package modifier c = 16 contact package type qv = vqfn product family identifier product type p = power amplifier voltag e l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = sst communications 1. environmental suffix ?e? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?.
preliminary specifications 2.4 ghz high-linearity power amplifier sst12lp10 11 ?2005 sst communications corp. s71280-00-000 1/05 packaging diagrams 16- contact v ery - thin q uad f lat n o - lead (vqfn) sst p ackage c ode : qvc table 4: r evision h istory revision description date 00 s71280: sst conversion of data sheet gp1210 jan 2005 note: 1. complies with jedec jep95 mo-220i, variant veed except external paddle nominal dimensions. 2. from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 16-vqfn-3x3-qvc-0 .0 1.7 0.5 bsc see notes 2 and 3 pin #1 0.30 0.18 0.076 1.7 0.2 3.00 0.10 3.00 0.10 0.05 max 0.45 0.35 1.00 0.80 p in #1 top view bottom view side view 1mm
preliminary specifications 2.4 ghz high-linearit y power amplifier sst12lp10 ?2005 sst communications corp. s71280-00-000 1/05 12 contact information marketing sst communications corp. 2951 28th street, ste. 2040 santa monica, ca 90405 tel: 310-581-1650 x27 fax: 310-581-1663 sales north america asia pacific north silicon storage technology, inc. sst macao les crowder h. h. chang technical sales support - major accounts senior director, sales 1922 colina salida del sol room a, 8th floor, san clemente, ca 92673-3652 usa macao financial centre, tel: 949-495-6437 no. 230-246, rua pequim, macao cell: 714-813-6636 tel: (853) 706-022 fax: 949-495-6364 fax: (853) 706-023 e-mail: lcrowder@sst.com e-mail: hchang@sst.com europe asia pacific south silicon storage technology ltd. sst communications co. ralph thomson andy chang applications manager director of sales mark house 2f, no. 415, tiding blvd., sec.2, 9-11 queens road neihu, taipei, hersham kt12 5lu uk taiwan, r.o.c. tel: +44 (0) 1869 321 431 tel: 02-2656-2888 x220 cell: +44 (0) 7787 508 919 fax: 02-2656-2889 e-mail: rthomson@sst.com e-mail: achang@sst.com japan korea sst japan sst korea yashushi yoshinaga charlie shin sales manager country manager 6f kose #2, 1-14-20 shin-yokohama, rm# 1101 dongu root bldg, 16-2 sunae-dong, kohoku-ku, yokohama 222-0033 bundang-gu, sungnam, kyunggi-do kanagawa, japan korea, 463-020 tel: (81) 45-471-1851 tel: (82) 31-715-9138 fax: (81) 45-471-3285 fax: (82) 31-715-9137 email: yoshi@sst.com email: cshin@sst.com silicon storage technology, inc. 1171 sonora court sunnyvale, ca 94086 telephone 408-735-9110 fax 408-735-9036 www.superflash.com or www.sst.com

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