power transistors 1 2sc2497, 2sc2497a 2sc2497, 2sc2497a 2sc2497, 2sc2497a 2sc2497, 2sc2497a 2sc2497, 2sc2497a silicon npn epitaxial planar type for low-frequency power amplification complementary to 2sa1096 and 2sa1096a features ? high collector to emitter voltage v ceo ? to-126b package which requires no insulation plate for installa- tion to the heat sink absolute maximum ratings t c = 25 c 1 : emitter 2 : collector 3 : base to-126b package unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base voltage v cbo 70 v collector to 2sc2497 v ceo 50 v emitter voltage 2sc2497a 60 emitter to base voltage v ebo 5v peak collector current i cp 3a collector current i c 1.5 a collector power dissipation p c 1.2 * 1 w 5 * 2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 20 v, i e = 0 1 a i ceo v ce = 10 v, i b = 0 100 a emitter cutoff current i ebo v eb = 5 v, i c = 0 10 a collector to base voltage v cbo i c = 1 ma, i e = 0 70 v collector to emitter 2sc2497 v ceo i c = 2 ma, i b = 0 50 v voltage 2sc2497a 60 forward current transfer ratio * h fe v ce = 5 v, i c = 1 a 80 220 collector to emitter saturation voltage v ce(sat) i c = 1.5 a, i b = 0.15 a 1 v base to emitter saturation voltage v be(sat) i c = 1.5 a, i b = 0.15 a 1.5 v transition frequency f t v cb = 5 v, i e = ? 0.5 a, f = 200 mhz 150 mhz collector output capacitance c ob v cb = 20 v, i e = 0, f = 1 mhz 35 pf rank r s h fe 80 to 160 120 to 220 8.0 +0.5 ?0.1 1.9 0.1 3.05 0.1 3.8 0.3 11.0 0.5 16.0 1.0 3.2 0.2 0.75 0.1 0.5 0.1 2.3 0.2 4.6 0.2 0.5 0.1 1.76 0.1 123 3.16 0.1 note) * 1: without heat sink * 2: with a 100 100 2 mm a1 heat sink note) * : rank classification
power transistors 2 2sc2497, 2sc2497a v be(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb v cer ? r be i cbo ? t a 0 6 5 4 3 2 1 0 40 80 120 160 (1)with a 100 100 2mm al heat sink (2)without heat sink (1) (2) ambient temperature t a ( ?c ) collector power dissipation p c ( w ) 0 1.0 3.0 2.0 4.0 3.5 2.5 1.5 0.5 012 210 48 6 t c =25 ? c 45ma 40ma 30ma 35ma 20ma 25ma 10ma 5ma 15ma i b =50ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 i c /i b =10 25 ? c 25 ? c t c =100 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.03 0.01 1 0.1 0.03 0.3 0.1 0.3 1 3 10 3 i c /i b =10 t c = 25 ? c 25 ? c 100 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 3 1 0.1 0.03 0.3 1 3 10 30 100 300 1000 v ce =5v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.03 0.1 0.3 1 3 10 0 240 200 160 120 80 40 v cb =5v f=200mhz t c =25 ? c emitter current i e ( a ) transition frequency f t ( mhz ) 0 1 240 200 160 120 80 40 3 10 30 100 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.1 0.3 1 3 10 30 100 0 20 40 60 80 100 10 30 50 70 90 i c =10ma t c =25 ? c base to emitter resistance r be ( k ? ) collector to emitter voltage v cer ( v ) 1 10 10 2 10 3 10 4 180 140 100 60 20 0 40 80 120 160 v cb =40v ambient temperature t a ( ? c ) i cbo ( t a ) i cbo ( t a =25 ? c )
power transistors 3 2sc2497, 2sc2497a area of safe operation (aso) 0.001 0.003 0.1 0.3 0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 100 single pulse t c =25 ? c t=10ms i cp i c t=1s 2sc2497a 2sc2497 collector to emitter voltage v ce ( v ) collector current i c ( a )
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