elektronische bauelemente SCS520DS 0.1 a, 30 v silicon epitaxial planar schottky barrier rectifier s 11-nov-2009 rev. b page 1 of 2 2 22 2 anode 1 11 1 cathode rohs compliant product a suffix of -c specifies halogen & lead-free description silicon epitaxial planar schottky barrier diodes small surface mounting type high reliability low reverse current and low forward voltage application high speed switching for detection for portable equipment: (i.e. mobile phone, mp3, md,cd-rom, dvd-rom, note book pc, etc.) package information weight: 0.0123 g (approximately) marking code cathode - e + anode maximum ratings and electrical characteristics (single diode at t a = 25 c) parameter symbol limits unit dc reverse voltage v r 30 v mean rectifying current i o 100 ma peak forward surge current i fsm 500 ma junction, storage temperature t j , t stg +125, -40 ~ +125 electrical characteristics (at t a = 25 c unless otherwise specified) parameters symbol min. typ. max. unit test conditions forward voltage v f - - 0.45 v i f = 10ma reverse current i r - - 0.5 ua v r = 10v dfnwb millimeter millimeter ref. min. max. ref. min. max. a 0.55 0.65 e 0.15 0.35 b 0.95 1.05- f 0.05ref c 0.4 0.5 g 0.4 0.6 d 0 0.05 h 0.65typ
elektronische bauelemente SCS520DS 0.1 a, 30 v silicon epitaxial planar schottky barrier rectifier s 11-nov-2009 rev. b page 2 of 2 ratings and characteristic curves
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