? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c, r gs = 1m 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 86 a i dm t c = 25 c, pulse width limited by t jm 190 a i a t c = 25 c 15 a e as 2 j p d t c = 25 c 830 w dv/dt i s i dm , v dd v dss , t j 150c 20 v/ns t j -55 to +150 c t jm +150 c t stg -55 to +150 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6.0 g to-268 4.0 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 300 v v gs(th) v ds = v gs , i d = 4ma 3.0 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 1.75 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 43 m trench tm hiperfet tm power mosfet ixfh86n30t IXFT86N30T ds100208(11/09) v dss = 300v i d25 = 86a r ds(on) 43m advance technical information n-channel enhancement mode avalanche rated fast intrinsic rectifier g = gate d = drain s = source tab = drain to-247 (ixfh) to-268 (ixft) g s d (tab) s g d (tab) d features z international standard packages z avalanche rated z high current handling capability z fast intrinsic rectifier z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching
ixys reserves the right to change limits, test conditions, and dimensions. ixfh86n30t IXFT86N30T symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 70 115 s c iss 11.3 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 720 pf c rss 87 pf t d(on) 16 ns t r 18 ns t d(off) 54 ns t f 15 ns q g(on) 180 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 48 nc q gd 50 nc r thjc 0.15 c/w r thcs to-247 0.21 c/w note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3.3 (external) advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixft) outline terminals: 1 - gate 2 - drain 3 - source tab - drain source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 86 a i sm repetitive, pulse width limited by t jm 340 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 150 ns i rm 8.5 a q rm 460 nc i f = 43a, -di/dt = 100a/ s, v r = 100v, v gs = 0v
? 2009 ixys corporation, all rights reserved ixfh86n30t IXFT86N30T fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds - volts i d - amperes v gs = 10v 7v 6 v 5 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 5 v 6 v 5.5 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 90 0123456789 v ds - volts i d - amperes v gs = 10v 6 v 5 v fig. 4. r ds(on) normalized to i d = 43a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 86a i d = 43a fig. 5. r ds(on) normalized to i d = 43a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r ds(on) - normalized v gs = 10 v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfh86n30t IXFT86N30T fig. 7. input admittance 0 20 40 60 80 100 120 140 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = 150v i d = 43a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 1,000.0 1 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s 10ms r ds( on ) limit 100m
? 2009 ixys corporation, all rights reserved ixfh86n30t IXFT86N30T fig. 14. resistive turn-on rise time vs. drain current 14 16 18 20 22 24 26 40 45 50 55 60 65 70 75 80 85 90 i d - amperes t r - nanoseconds r g = 3.3 ? , v gs = 15v v ds = 150v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 18 19 20 21 22 23 24 25 26 2 4 6 8 10 12 14 16 18 r g - ohms t r - nanoseconds 13 14 14 15 15 16 16 17 17 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 150v i d = 86 a i d = 43 a fig. 16. resistive turn-off switching times vs. junction temperature 12 14 16 18 20 22 24 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 45 50 55 60 65 70 75 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 15v v ds = 150v i d = 43a i d = 86a fig. 17. resistive turn-off switching times vs. drain current 13 14 15 16 17 18 19 20 40 45 50 55 60 65 70 75 80 85 90 i d - amperes t f - nanoseconds 45 50 55 60 65 70 75 80 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 ? , v gs = 15v v ds = 150v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 14 16 18 20 22 24 26 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 ? , v gs = 15v v ds = 150v i d = 86 a i d = 43 a fig. 18. resistive turn-off switching times vs. gate resistance 10 12 14 16 18 20 22 24681012141618 r g - ohms t f - nanoseconds 50 55 60 65 70 75 80 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 150v i d = 86a i d = 43a
ixys reserves the right to change limits, test conditions, and dimensions. ixfh86n30t IXFT86N30T ixys ref: f_86n30t(8w)10-21-09 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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