document number: 81148 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.3, 13-jul-10 1 bidirectional symmetrical (bisy) single line esd-protection diode in llp1006-2m VCUT03B1-DD1 vishay semiconductors marking (example only) bar = pin 1 marking x = date code y = type code (see table below) features ? ultra compact llp1006-2m package ? low package height < 0.4 mm ? 1-line esd-protection ? working range 3.5 v ? low leakage current < 0.1 a ? low load capacitance cd = 12.5 pf ? esd-protection acc. iec 61000-4-2 18 kv contact discharge 20 kv air discharge ? soldering can be checked by standard vision inspection. no x-ray necessary ? pin plating nipdau (e4) no whisker growth ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec 20 8 55 21129 1 2 21121 xy ordering information device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VCUT03B1-DD1 VCUT03B1-DD1 8000 8000 package data device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VCUT03B1-DD1 llp1006-2m n 0.72 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings parameter test conditions symbol value unit peak pulse current acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 3.5 a peak pulse power pin 1 to pin 2 acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 40 w esd immunity contact discharge acc. iec61000-4-2; 10 pulses v esd 18 kv air discharge acc. iec6 1000-4-2; 10 pulses 20 operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c ** please see document ?vishay material category policy?: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81148 2 rev. 1.3, 13-jul-10 VCUT03B1-DD1 vishay semiconductors bidirectional symmetrical (bisy) single line esd-pr otection diode in llp1006-2m cut the spikes with VCUT03B1-DD1 the VCUT03B1-DD1 is a bidirectional a nd symmetrical (bisy) esd-protection devi ce which clamps positive and negative overvoltage transients to ground. connected between the signal or data line and the ground the VCUT03B1-DD1 offers a high isolation (low leakage current, low capacitance) within the sp ecified working range. due to the short leads and small package size of the tiny llp1006-2m package the lin e inductance is very low, so that fast transients like an esd-strike can be clamped with minimal over- or undershoots. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - esd discharge current wave form acc. iec 61000-4-2 (330 ? /150 pf) fig. 2 - 8/20 s peak pulse current wave form acc. iec 61000-4-5 fig. 3 - typical capacitance c d vs. reverse voltage v r fig. 4 - typical forward current i f vs. forward voltage v f electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test conditions/remarks symbol min. typ. max. unit protection paths number of lines which can be protected n lines - - 1 lines reverse stand-off voltage at i r = 0.1 a v rwm 3.5 - - v reverse current at v = 3.5 i r -0.1a reverse breakdown voltage at i =1 ma v br 5.8 6.7 7.5 v reverse clamping voltage at i pp = 1 a v c -7.89 v at i pp = i ppm = 3.5 a v c - 9.5 11.5 v capacitance at v = 0 v; f = 1 mhz c d -12.515pf at v = 2.5 v; f = 1 mhz c d -11.5- pf 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 v r ( v ) c d (pf) 217 8 7 0 2 4 6 8 10 12 14 0123456 f = 1 mhz i r ( a) v r ( v ) 217 88 0 1 2 3 4 5 6 7 8 10 -2 10 -1 110 1 10 2 10 3 10 4 10 5
document number: 81148 for technical questions, contact: esdprotection@vishay.com www.vishay.com rev. 1.3, 13-jul-10 3 VCUT03B1-DD1 bidirectional symmetrical (bisy) single line esd-protection diode in llp1006-2m vishay semiconductors fig. 5 - typical reverse voltage v r vs. reverse current i r fig. 6 - typical peak clamping voltage v c vs. peak pulse current i pp fig. 7 - typical clamping performance at + 8 kv contact discharge (acc. iec 61000-4-2) i pp (a) v c ( v ) 217 8 9 0 2 4 6 8 10 12 012345 v c meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) t (ns) v c-esd ( v ) 21790 - 30 - 20 - 10 0 10 20 30 40 50 60 70 - 10 0 10 20 30 40 50 60 70 8 090 acc. iec 61000-4-2 8 k v contact discharge v esd (k v ) v c-esd ( v ) 21791 0 20 40 60 8 0 100 120 140 160 0 5 10 15 20 25 30 acc. iec 61000-4-2 contact discharge v c-esd
www.vishay.com for technical questions, contact: esdprotection@vishay.com document number: 81148 4 rev. 1.3, 13-jul-10 VCUT03B1-DD1 vishay semiconductors bidirectional symmetrical (bisy) single line esd-pr otection diode in llp1006-2m package dimensions in millimeters (inches): llp1006-2m 2179 8 document no.:s8-v-3906.04-019 (4) solder resist mask solder pad 0.55 (0.022) 0.45 (0.01 8 ) 0.25 (0.010) 0.15 (0.006) 0.45 (0.01 8 ) 0.35 (0.014) 0.3 (0.012) 0.2 (0.00 8 ) 0.40 (0.016) 0.33 (0.013) 1.05 (0.041) 0.95 (0.037) soldermask opening 0.03 meas u red middle of the package 0.05 (0.002) 0 (0.000) 0.125 (0.005) ref. 0.65 (0.026) 0.55 (0.022) 0.05 (0.002) 0.25 (0.010) 0.5 (0.020) 1 (0.039) 0.5 (0.020) 0.6 (0.024) 0.2 (0.00 8 ) created - date: 24.june.2009 orientation identification foot print recommendation:
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