sot23 silicon planar high speed switching diodes issue 2 - june 1995 pin configurations partmarking details bal99 - e2 BAR99 - e3 absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 70 v repetitive peak reverse voltage v rrm 70 v average rectified forward current ( over any 20ms period) i f(av) 100 ma repetitive peak forward current i frm 200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. forward voltage v f 715 855 1.1 1.3 mv mv v v i f =1ma i f =10ma i f =50ma i f =100ma reverse current i r 30 2.5 50 m a m a m a v r =25v, t j =150c v r =70v v r =70v, t j =150c diode capacitance c d 1.5 pf f=1mhz forward recovery voltage v fr 1.75 v switched to i f =10ma, t r =20ns reverse recovery time t rr 6 ns switched from if=10ma, v r =1v r l =100 w , ir=1ma spice parameter data is available upon request for this device for switching circuit information refer to bav99 datasheet. bal99 BAR99 3 1 2 1 bal99 BAR99 1 3 2 sot23 bal99 BAR99
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