april 03, 2002 page 1 of 6 IBM43RCLNA1115 datasheet sige 900 mhz gsm low-noise amplifier with gain control features ? 925-960 mhz operation for gsm applica- tions ? low power, single 2.8 volt supply ? gain control feature with 0, 17, and 25 db gain settings ? 40 db of reverse isolation at all gain settings ? standby mode with less than 20 a current consumption ? compact msop-8l package ? high iip3 and low noise meet demanding system requirements applications ? gsm portable transceivers description the IBM43RCLNA1115 is a gain-controlled low-noise amplifier (lna) implemented using ibm microelectronics silicon germanium (sige) technology. the lna is designed for low power consump- tion and uses a 2.8 volt power supply. it is opti- mized for gsm applications that require amplifiers with very high reverse isolation such as direct conversion where the lna is more susceptible to local oscillator leakage. the IBM43RCLNA1115 is programmable for three levels of gain, and it has a very low power standby mode. the inputs for gain control and standby mode are 3v cmos compatible. external capacitors in series with the input and output are required for dc blocking and as part of the impedance matching networks. a series inductor on the input and a shunt inductor on the output are also part of the matching network. proper selection of these components ensures optimized lna performance in the desired band. specifications in this data sheet were obtained using the circuit in the ibm evaluation board for this product. ordering information to order samples of the lna or an evaluation board, contact an ibm sales representative or distributor. regional contact information is located on the ibm microelectronics division web site at: www.ibm.com/chips/support/howtobuy.html note: the low noise amplifier is susceptible to damage from electrostatic discharge (esd). observe normal esd precautions at all times. figure 1. IBM43RCLNA1115 low noise amplifier gc2 gnd rf out gc1 vcc arlna gnd rf in 5 6 7 8 4 3 2 1 msop-8l package 3.0x3.0 mm. part number product IBM43RCLNA1115 sige 900 mhz gsm low- noise amplifier with gain control IBM43RCLNA1115evba 900 mhz lna evaluation board
IBM43RCLNA1115 datasheet sige 900 mhz gsm low-noise amplifier with gain control page 2 of 6 april 03, 2002 technical description note: 1 control lines pg1, pg2, and standby require cmos logic levels figure 2. sige 900 mhz gsm lna schematic v cc rf out rf in pg2 pg1 standby 5 1 3 4 2,6 7 8 lna 6.8nh 5.6nh 3.3pf 33pf 4.7pf 0.01uf 68pf 47pf 0.01uf table 1. operating conditions symbol parameter min. typical max units notes v cc1 and v cc2 supply voltage 2.7 2.8 2.9 vdc i cc supply current 6 20 a standby mode 810 ma low gain mode 17 22 mid gain mode 12 15 high gain mode i gc1 gain control 1 current 7 10 a i gc2 gain control 2 current 8 10 a t opr operating temperature -20 +25 +70 c t sto storage temperature -40 +25 +85 table 2. control functions 1 mode standby (pin 4) programmable gain 1 (pin 7) programmable gain 2 (pin 8) high111 mid101 low 1 0 0 standby 0 0 0
april 03, 2002 page 3 of 6 IBM43RCLNA1115 datasheet sige 900 mhz gsm low-noise amplifier with gain control . table 3. ac characteristics (v cc = 2.8vdc, t a = 25 c) symbol parameter rating units notes minimum typical maximum f0 frequency 925 to 960 mhz insertion power gain 24 25 28 db high gain mode 15.5 17 20 mid gain mode -3 0 3 low gain mode variation over supply/temperature +/-1.7 db high gain mode +/-1.5 db mid gain mode +/-0.8 db low gain mode variation over frequency +/-0.1 db high gain mode +/-0.1 db mid gain mode +/-0.1 db low gain mode variation over process +/-0.8 db high gain mode +/-0.8 db mid gain mode +/-0.8 db low gain mode nf noise figure 1.6 3.0 db high gain mode 2.4 3.3 mid gain mode 3.8 5.0 low gain mode reverse isolation -40 -35 db in all gain modes iswr input swr 1.7:1 3:1 high gain mode 2.1:1 3:1 mid gain mode 2.3:1 3:1 low gain mode oswr output swr 1.6:1 2:1 high gain mode 1.2:1 2:1 mid gain mode 1.3:1 2:1 low gain mode iip3 input third order intercept -20 -17.0 dbm high gain mode -9.5 -6.0 mid gain mode -9.5 -6.3 low gain mode p1db input 1 db compression point -30 -26.0 dbm high gain mode -20 -16 mid gain mode -20 -16 low gain mode stability unconditional s 21 2 s 21 2 s 21 2 s 21 2 s 12 2
IBM43RCLNA1115 datasheet sige 900 mhz gsm low-noise amplifier with gain control page 4 of 6 april 03, 2002 figure 3. low noise amplifier gain plot (typical) -5 0 5 10 15 20 25 30 880 900 920 940 960 980 1000 frequency (mhz) gain (db) high gain medium gain low gain figure 4. low noise amplifier noise figure plot (typical) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 880 900 920 940 960 980 1000 frequency (mhz) noise figure (db) high gain medium gain low gain
april 03, 2002 page 5 of 6 IBM43RCLNA1115 datasheet sige 900 mhz gsm low-noise amplifier with gain control table 4. pin descriptions pin name description package type 1 rf in rf input 2 gnd ground 3v cc dc supply 4 standby mode control (see table 2 ) 5 rf out rf output 6 gnd ground 7 pg1 mode control (see table 2 ) 8 pg2 mode control (see table 2 ) gc2 gnd rf out gc1 vcc arlna gnd rf in 5 6 7 8 4 3 2 1 msop-8l package 3.0x3.0 mm. figure 5. 900 mhz gsm lna package dimensions msop-8l package, all dimensions in millimeters
IBM43RCLNA1115 datasheet sige 900 mhz gsm low-noise amplifier with gain control page 6 of 6 april 03, 2002 document revision log note: this document contains information on prod- ucts in the design, sampling and/or initial production phases of development. this information is subject to change without notice. verify with your ibm field applications engineer that you have the latest ver- sion of this document before finalizing a design. ? copyright international business machines corporation 2002 all rights reserved printed in the united states of america april 2002 the following are trademarks of international business machines corporation in the united states, or other countries, or both. ibm ibm logo other company, product and service names may be trademarks or service marks of others. all information contained in this document is subject to change without notice. the products described in this document are not intended for use in implantation or other life support applications where malfunction may result in injury or death to persons. the information contained in this document does not affect or change ibm product specifications or warranties. nothing in this docu- ment shall operate as an express or implied license or indemnity under the intellectual property rights of ibm or third parties. all information contained in this document was obtained in specific environments, and is presented as an illustration. the results obtained in other operating environments may vary. the information contained in this document is provided on an "as is" basis. in no event will ibm be liable for damages arising directly or indirectly from any use of the infor- mation contained in this document. ibm microelectronics division 1580 route 52, bldg. 504 hopewell junction, ny 12533-6351 the ibm home page can be found at http://www.ibm.com the ibm microelectronics division home page can be found at http://www.chips.ibm.com lna1115_ds_040302.fm.02 april 03, 2002 rev. contents of modification july 19, 1999 initial release (00) november 21, 2001 overall revision (01) april 03, 2002 removed preliminary from docu- ment for general release (02)
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