power transistors 1 2sc18462sc1846 2sc18462sc1846 2sc1846 silicon npn epitaxial planar type for midium output power amplification complementary to 2sa0885 ( 2 sa 885 ) features ? low collector to emitter saturation voltage v ce(sat) ? output of 3 w can be obtained by a complementary pair with 2sa0885 ? to-126b package which requires no insulation plate for installa- tion to the heat sink absolute maximum ratings t c = 25 c 1 : emitter 2 : collector 3 : base to-126b package unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base voltage v cbo 45 v collector to emitter voltage v ceo 35 v emitter to base voltage v ebo 5v peak collector current i cp 1.5 a collector current i c 1a collector power dissipation p c 1.2 * 1 w 5 * 2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 20 v, i e = 0 0.1 a i ceo v ce = 20 v, i b = 0 100 a emitter cutoff current i ebo v eb = 5v, i c = 0 10 a collector to base voltage v cbo i c = 1 ma, i e = 0 45 v collector to emitter voltage v ceo i c = 2 ma, i b = 0 35 v forward current transfer ratio h fe1 * v ce = 10 v, i c = 500 ma 85 160 340 h fe2 v ce = 5 v, i c = 1 a 50 collector to emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.5 v transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 20 pf rank q r s h fe1 85 to 170 120 to 240 170 to 340 note) * 1: without heat sink * 2: with a 100 100 2 mm a1 heat sink 8.0 +0.5 ?0.1 1.9 0.1 3.05 0.1 3.8 0.3 11.0 0.5 16.0 1.0 3.2 0.2 0.75 0.1 0.5 0.1 2.3 0.2 4.6 0.2 0.5 0.1 1.76 0.1 123 3.16 0.1 note) * : rank classification
power transistors 2 2sc1846 v ce(sat) ? i c v be(sat) ? i c h fe ? i c p c ? t a i c ? v ce i c ? i b f t ? i e c ob ? v cb v cer ? r be 0 6 5 4 3 2 1 0 200 40 80 160 120 180 20 60 140 100 (1)with a 100 100 2mm al heat sink (2)without heat sink (1) (2) ambient temperature t a ( ?c ) collector power dissipation p c ( w ) 0 1.5 1.25 1.0 0.75 0.5 0.25 010 24 8 6 t c =25 ? c 9ma 8ma 7ma 6ma 5ma 4ma 3ma 2ma 1ma i b =10ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0 1.2 1.0 0.8 0.6 0.4 0.2 012 210 48 6 v ce = 10v ta=25 ? c base current i b ( ma ) collector current i c ( a ) 0.001 0.003 0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1 3 i c /i b =10 25 ? c 25 ? c t c =100 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.03 0.01 1 0.1 0.03 0.3 0.1 0.3 1 3 10 3 i c /i b =10 t c = 25 ? c 25 ? c 100 ? c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 3 1 0.1 0.03 0.3 1 3 10 30 100 300 1000 v ce =10v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 0 40 80 120 200 160 20 60 100 180 140 v cb =10v f=200mhz t c =25 ? c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 50 40 30 20 10 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.1 0.3 1 3 10 30 100 0 20 40 60 80 100 i c =10ma t c =25 ? c base to emitter resistance r be ( k ? ) collector to emitter voltage v cer ( v )
power transistors 3 2sc1846 i cbo ? t a area of safe operation (aso) 1 10 10 2 10 3 10 4 0 160 40 120 80 140 20 100 60 v ce =10v ambient temperature t a ( ? c ) i cbo ( t a ) i cbo ( t a =25 ? c ) 0.001 0.003 0.1 0.3 0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 100 single pulse t c =25 ? c t=10ms i cp i c t=1s collector to emitter voltage v ce ( v ) collector current i c ( a )
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