standard avalanche sinterglass diode BYT62 vishay semiconductors www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86033 156 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 25-aug-10 mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed package ? controlled avalanche characteristics ? low reverse current ? compliant to rohs dire ctive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? high voltage rectification diode 949539 parts table part type differentiation package BYT62 v r = 2400 v; i fav = 350 ma sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics v r = v rrm 2400 v peak forward surge current t p = 10 ms, half sine wave i fsm 10 a average forward current r thja 60 k/w i fav 350 ma non repetitive reverse avalanche energy i (br)r = 1 a, inductive load e r 60 mj junction temperature t j 175 c storage temperature range t stg - 55 to + 190 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 60 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max unit forward voltage i f = 200 ma v f --3v i f = 1 a v f --3.6v i f = 1 a, t j = 175 c v f --2.9v i f = 1 a, t j = - 40 c v f --4v reverse current v r = v rrm i r --5a v r = v rrm , t j = 175 c i r - - 250 a v r = v rrm , t j = - 40 c i r - - 400 na reverse breakdown voltage i r = 100 a v (br)r 2500 - - v reverse recovery time l f = 0.5 a, l r = 1 a, i r = 0.25 a t rr --5s
BYT62 standard avalanche sinterglass diode vishay semiconductors document number: 86033 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 25-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 157 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - max. reverse power diss ipation vs. juncti on temperature fig. 2 - max. reverse curr ent vs. junction temperature fig. 3 - max. forward current vs. forward voltage package dimensions in millimeters (inches): sod-57 04080120160 0 100 200 300 400 600 200 95 9725 500 t j - junction temperature (c) p r - max. rever s e power di ss ipation (mw) v r = v rrm r thja = 30 k/w r thja = 60 k/w 04080120160 0.1 1 10 100 1000 200 95 9726 t j - junction temperature (c) i r - rever s e current (a) v r = v rrm 0.001 0.01 0.1 1 10 95 9727 1 03 25 47 6 v f - forward voltage (v) i f - forward current (a) t j = 175 c t j = 25 c t j = - 40 c 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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