View JAN2N5237S_3373679.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

mil - prf - 19500/394g 5 july 2002 superseding mil - prf - 19500/394f 23 april 2001 performance specification semicon ductor device, transistor, npn, silicon, power switching types: 2n4150, 2n5237, 2n5238, 2n4150s, 2n5237s, and 2n5238s jan, jantx, jantxv, jans, janhc and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for npn, silicon, low - power, high voltage transistors. four levels of product assurance are provided for each encapsulated device type as specified in mil - prf - 19500 and two levels of product assurance are provided for each unencapsulated device type. 1.2 physical dimensions . see figure 1 (to - 5) and figures 2 and 3 (janhc and jankc). 1.3 maximum ratings . types p t (1) t a = +25 c p t (2) t c = +25 c v cbo v ceo v ebo i c t stg and t j r q jc (max) r q ja (min) 2n4150, s 2n5237, s 2n5238, s w 1.0 1.0 1.0 w 5.0 5.0 5.0 v dc 100 150 200 v dc 70 120 170 v dc 10 10 10 a dc 10 10 10 c - 65 to +200 - 65 to +200 - 65 t o +200 c/mw .020 .020 .020 c/mw .175 .175 .175 (1) derate linearly 5.7 mw/ c for t a > +25 c. (2) derate linearly 50 mw/ c for t c > +100 c. amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch - pound the documentation and process conversion measures necessary to comply with this revision shall be completed by 5 october 2002 . beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: defense supply center, columbus, attn: dscc - vac, p.o. box 3990, columbus, oh 43216 - 5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil - prf - 19500/394g 2 1.4 primary electrical characteristics . h fe2 (1) h fe3 (1) c obo h fe v be(sat) (1) v ce(sat) limits i c = 5 a dc i c = 10 a dc i e = 0 i c = 0.2 a dc i c = 5 a dc i c = 5 a dc v ce = 5 v dc v ce = 5 v dc v cb = 10 v dc v ce = 10 v dc i b = 0.5 a dc i b = 0.5 a dc 100 khz f 1 mhz f = 10 mhz pf v dc v dc min 40 10 1.5 max 120 350 7.5 1.5 0.6 (1) puls ed, (see 4.5.1). 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, wh ether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, t he issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil - prf - 19500 - s emiconductor devices, general specification for. standard department of defense mil - std - 750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm ? dodssp), 700 robbins avenue, philadelphia, pa 19111 - 5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the t ext of this document takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil - prf - 19500/394g 3 figure 1. physical dimensions .
mil - prf - 19500/394g 4 dimensions symb ol inches millimeters notes min max min max cd .305 .335 7.75 8.51 5 ch .240 .260 6.10 6.60 h .009 .041 0.23 1.04 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7 ll see notes 14 and 15 lu .016 .019 0.41 0.48 7 l 1 .050 1.27 7 l 2 .250 6.35 7 q .050 1.27 13 r .010 0.25 11,12 tl .029 .045 0.74 1.14 3 tw .028 .034 0.71 0.86 10 a 45 tp 45 tp 4, 6, 8, 9 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. symbol tl is measured from hd maximum. 4. lead number 4 omitted on this variation. 5. cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 inch (1.37 mm) + .001 (0.03 mm) - .000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) relative to the tab. the device may be measured by direct methods. 7. ld applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. lead diameter shall not exceed .042 inch (1.07 mm) within l 1 and beyond ll minimum. 8. lead designation is as follows: 1 - emitter; 2 - base; 3 - collector. 9. lead number three is electrically connected to case. 10. beyond r max imum, tw shall be held for a minimum length of .011 inch (0.28 mm). 11. r (radius) applies to both inside corners of tab. 12. tab shown omitted. 13. details of outline in this zone optional. 14. for transistor types 2n4150s, 2n5237s, and 2n5238s, dimen sion ll = 0.500 inch (12.70 mm) minimum, and 0.750 inch mm) maximum. 15. for transistor types 2n4150, 2n5237, and 2n5238, dimension ll = 1.500 inch (38.10 mm) minimum, and 1.750 inches (44.45 mm) maximum. figure 1. physical dimensions - continued.
mil - prf - 19500/394g 5 notes: 1. chip size: 120 x 120 mils 2 mils. 2. chip thickness: 10 1.5mils nominal. 3. top metal: aluminum 30,000 ? minimum, 33,000 ? nominal. 4. back metal: a. al/ti/ni/ag12k ? /3k ? /7k ? /7k ? min.15k ? /5k ? /10k ? /10k ? nominal. b. gold 2,500 ? minimum, 3,000 ? nominal. 5. backside: collector. 6. bonding pad: b = 52 x 12 mils, e = 84 x 12 mils. figure 2. janhc and jankc a - version die dimensions .
mil - prf - 19500/394g 6 notes: 1. die size: .155 x .155 inch (3.937 x 3.937 mm) . 2. die thickness: .008 .0016 inch (0.2032 0.04064 mm). 3. base pad: .012 x .090 inch (0.3048 x 2.286 mm). 4. emitter pad: .012 x .090 inch. 5. back metal: gold, 2400 720 ang. 6. top metal: aluminum, 37500 7500 ang. 7. back side: collector. 8. glassivation: sio 2 , 7500 1500 ang. figure 3. janhc and jankc b - version die dimensions .
mil - prf - 19500/394g 7 3. requirements 3.1 general . the requirements for acquiring the product described herein shall consist of this document and mil - prf - 19500. 3.2 qualifi cation . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil - prf - 19500. 3.4 interface and physical dimensions . the interface and physical dimensions shall be as specified in mil - prf - 1 9500, on figure 1 (to - 5) and on figures 2 and 3 (janhc and jankc) herein. 3.4.1 lead finish . lead finish shall be solderable in accordance with mil - prf - 19500, mil - std - 750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 construction . these devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements of mil - prf - 19500 and this document. 3.5 marking . marking shall be in accordance with mil - prf - 19500. 3.6 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.7 electrical test requirements . the e lectrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, s erviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in accordance with mil - prf - 19500 and as specified herein. 4.2.1 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil - prf - 19500. * 4.2.2 group e qualification . group e qualification shall be performed herein for qualification or requalification only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of tab le ii tests, the tests specified in table ii herein shall be performed by the first inspection lot to this revision to maintain qualification.
mil - prf - 19500/394g 8 * 4.3 screening (jans, jantxv, and jantx levels only) . screening shall be in accordance with table iv of mil - prf - 19500 and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv of mil - prf - 19500) measurement jans level jantx and jantxv levels 3c thermal impedance, method 3131 of mil - std - 750, (see 4.3.3). thermal impedance, method 3131 of mil - std - 750, (see 4.3.3). 7 hermetic seal (optional) (1) hermetic seal (optional) (1) 9 i cbo2 and h fe1 not applicable 10 48 hours minimum 48 hours minimum 11 i cbo2 ; h fe1 ; d i cb02 = 100 percent of initial value or 5 0 na dc, whichever is greater; d h fe1 = 15 percent of initial value. i cbo2 and h fe1 12 see 4.3.2 240 hours minimum see 4.3.2 80 hours minimum 13 subgroups 2 and 3 of table i herein; d i cb02 = 100 percent of initial value or 50 na dc, whichever is greater; d h fe1 = 15 percent of initial value. subgroup 2 of table i herein; d i cb02 = 100 percent of initial value or 50 na dc, whichever is greater; d h fe1 = 15 percent of initial value. (1) hermetic seal test shall be performed in either screen 7 or screen 14. 4.3 .1 screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil - prf - 19500, ?discrete semiconductor die/chip lot acceptance? . burn - in duration for the jankc level follows jans requirements; the janhc follows jantx requir ements. 4.3.2 power burn - in conditions . power burn - in conditions are as follows: v cb = 10 vdc. power shall be applied to achieve t j =135 c minimum using a minimum p d = 75 percent of p t maximum rated as defined in 1.3.
mil - prf - 19500/394g 9 4.3.3 thermal impedance ( z q jx measurements) . the z q jx measurements shall be performed in accordance with method 3131 of mil - std - 750. a. i m measurement current ...................... 10 ma. b. i h forward heating current .................... 1 a. c. t h heating time ................................ ..... 10 - 30 ms. d. t md measurement delay time ............... 30 - 60 m s. e. v ce collector - emitter voltage .............. 16 v dc minimum. the maximum limit for z q jx under these test conditions are z q jx (max) = 12 c/w . 4.4 conformance inspection . conformance inspection shall be in accordance with mil - prf - 19500 and as specified herein. if alternate screening is being performed in accordance with mil - prf - 19500, a sample of screened devices shall be submitted to and pass the requirements of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied in accordance with 4.4.2). 4.4.1 group a inspection . group a inspection shall be conduc ted with mil - prf - 19500, and table i herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table via (jans) of mil - prf - 19500 and 4.4.2.1 herein. electrical measurements (end - points) and delta requirements shall be in accordance with table i, group a, subgroup 2 and 4.5.3 herein: delta requirements only apply to subgroups, b4, and b5. see 4.4.2.2 herein for jan, jantx, and jantxv group b testing. electrical measurements (end - points) and delta requirements for jan, jantx, and jantxv shall be after each step in 4.4.2.2 and shall be in accordance with table i, group a, subgroup 2 and 4.5.3 herein. * 4.4.2.1 group b inspection, table via (jans) of mil - prf - 19500 . subgroup method condition b4 1037 v cb = 10 v dc. b5 1027 (note: if a failure occurs, resubmission shall be at the test conditions of the original sample). v cb = 10 v dc; p d 3 100 percent of maximum rated p t (see 1.3). option 1: 96 hours minimum, sample size in accordance with table via of mil - prf - 19500, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hours., sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum.
mil - prf - 19500/394g 10 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exercised, the failed assembly lot shall be scrapped. subgroup method condition 1 1039 steady - state life: test condition b, 340 hours min., v cb = 10 - 30 v dc, power shall be applied to achieve t j = +150 c minimum using a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. n = 45 devices, c = 0. 2 1039 the steady - state life test of step 1 shall be extended to 1,000 hrs for each die design. samples shall be selected from a wafer lot every twelve months of wafer productio n. group b step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high - temperature life (non - operating), t = 340 hours, t a = +200 c. n = 22, c = 0. 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil - prf - 19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection. group c inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table vii of mil - prf - 19500, and in 4.4.3.1 (jans).and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end - points) and delta requirements shall be in accordance with tab le i, group a, subgroup 2 and 4.5.3 herein, delta measurements apply to subgroup c6. 4.4.3.1 group c inspection, table vii (jans) of mil - prf - 19500. subgroup method condition c2 2036 test condition e. c6 1026 1,000 hours at v cb = 10 v dc; power sh all be applied to achieve t j = +150 c minimum and a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. 4.4.3.2 group c inspection, table vii (jan, jantx, and jantxv) of mil - prf - 19500 . subgroup method condition c2 2036 test condition e. * c5 3131 see 4.5.2, r q jc . c6 not applicable.
mil - prf - 19500/394g 11 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitte d to and passes group a tests for conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for c6 life test may be pulled prior to the application of final lead finish. testing of a s ubgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 group e inspection . group e inspection shall be conducted in accordance with the conditions specif ied for subgroup testing in appendix e, table ix of mil - prf - 19500 and as specified herein. electrical measurements (end - points) shall be in accordance with table i, group a, subgroup 2 herein. 4.5 method of inspection . methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil - std - 750. 4.5.2 thermal resistance . thermal resistance measurements shall be conducted in accor dance with method 3131 of mil - std - 750. the following conditions shall apply: a. i m : collector current ................................ ............................... 10 ma. b. v ce : measurement current (same as v h ) ................................ .. 10 v dc. c. i h : collector heating current ................................ ................... 0.375 a. d. v h : collector - emitter heating voltage ................................ ...... 10 v dc. e. t h : heating time ................................ ................................ ...... 1.0 s. f. t md : measurement delay time ................................ ................... 30 to 60 m s. g. t sw : sampling window time ................................ ....................... 10 m s maximum. 4.5.3 delta requirements . delta requirements shall be as specified below: step inspection mil - std - 750 symbol limit uni t method conditions 1 collector - base cutoff current 3036 bias condition d, v cb = 80 v dc d i cb02 (1) 100 percent of initial value or 50 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 5 v dc; i c = 5 a dc; pul sed see 4.5.1 (see figure 4). d h fe2 (1) 20 percent change from initial reading. (1) devices which exceed the group a limits for this test shall not be accepted.
mil - prf - 19500/394g 12 table i. group a inspection . inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgrou p 1 2 / visual and mechanical examination 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / 2026 n = 15 leads, c = 0 resistance to solvent 3 / 4 / 5 / 1022 n = 15 devices, c = 0 temperature cycling 3 / 4 / 1051 te st condition c, 25 cycles. n = 22 devices, c = 0 hermetic seal 4 / fine leak gross leak 1071 n = 22 devices, c = 0 electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +25 0 c at t = 24 hrs or t a = +300 c at t = 2 hrs, n = 11 wires, c = 0 * decap internal 4 / visual (design verification) 2075 n = 4 device, c = 0 subgroup 2 collector to base cutoff current 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s 3036 v cb = 100 v dc v cb = 150 v dc v cb = 200 v dc i cbo1 10 m a dc breakdown voltage, collector to emitter 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s 3011 bias condition d, i c = 0.1 a dc, pulsed ( see 4.5.1) v (br)ceo 70 120 170 v dc see footnotes at end of table.
mil - prf - 19500/394g 13 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 2 - continued emitter to base cutoff current 3061 v be = 7 v dc i ebo1 10 m a dc collector to emitter cutoff current 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s 3041 bias condition d v ce = 60 v dc v ce = 110 v dc v ce = 160 v dc i ceo1 10 m a dc collector to emitter cutoff current 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s 3041 bias condition a v be = 0.5 v dc v ce = 60 v dc v ce = 110 v dc v ce = 160 v dc i cex 10 m a dc emitter to base cutoff current 3061 bias condition d, v be = 5 v dc i ebo2 0.1 m a dc collector to base cutoff current 3036 bias condition d, v cb = 80 v dc i cbo 0.1 m a dc forward - current transfer ratio 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s 3076 v ce = 5 v dc, i c = 1 a dc, pulsed (see 4.5.1) h fe1 50 50 50 200 225 225 forward - current transfer rat io 3076 v ce = 5 v dc, i c = 5 a dc, pulsed (see 4.5.1) h fe2 40 120 collector to emitter voltage (saturated) 3071 i c = 5 a dc, i b = 0.5 a dc, pulsed (see 4.5.1) v ce(sat)1 0.6 v dc collector to emitter voltage (saturated) 3071 i c = 10 a dc, i b = 1 a dc, pulsed (see 4.5.1) v ce(sat)2 2.5 v dc see footnotes at end of table.
mil - prf - 19500/394g 14 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 2 - continued base emi tter voltage saturation 3066 test condition a, i c = 5 a dc, i b = 0.5 a dc, pulsed (see 4.5.1) v be(sat)1 1.5 v dc base emitter voltage saturation 3066 test condition a, i c = 10 a dc, i b = 1 a dc, pulsed (see 4.5.1) v be(sat)2 2.5 v dc forward - current transfer ratio 3076 v ce = 5 v dc, i c = 10 a dc, pulsed (see 4.5.1) h fe3 10 subgroup 3 high temperature operation: t a = +150 c collector to emitter cutoff current 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s 3041 bias condition a, v be = - 0.5 v dc v ce = 60 v dc v ce = 110 v dc v ce = 160 v dc i cex2 100 m a dc low temperature operation: t a = - 55 c forward - current transfer ratio 3076 v ce = 5 v dc, i c = 5 a dc, pulsed (see 4.5.1) h fe4 20 subgroup 4 magnitude of common - emitter small - signal short - circuit forward - current transfer ratio 3306 v ce = 10 v dc, i c = 0.2 a dc, f = 10 mhz |h fe | 1.5 7.5 small - signal short - circuit forward - current transfer ratio 2n4150, 2n4150s 2n5237, 2n5237s 2n5238, 2n5238s 3206 v ce = 5 v dc, i c = 50 ma dc, f = 1 khz h fe 40 40 40 160 160 250 see footnotes at end of table.
mil - prf - 19500/394g 15 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit uni t method conditions min max subgroup 4 - continued open circuit output capacitance 3236 v cb = 10 v dc, i e = 0, 100 khz f 1 mhz c obo 350 pf pulse response 3251 test condition a delay time see figure 5 t d 50 ns rise time see figure 5 t r 500 ns storage time see figure 5 t s 1.5 m s fall time see figure 5 t f 500 ns subgroup 5 safe operating area (continuous dc) 3051 t c = +25 c, t = 1.0 s, test 1 v ce = 40 v dc, i c = 0.22 a dc test 2 v ce = 70 v dc, i c = 90 ma dc test 3 2n5237, 2n5237s only v ce = 120 v dc, i c = 15 ma dc 2n5238, 2n5238s only v ce = 170 v dc, i c = 3.5 ma dc clamped inductive sweep 3053 t c = +100 c minimum, i b = 0. 5 a dc, i c = 5 a dc, (see figure 6) electrical measurements see 4.5.3 herein. 1 / for sampling plan, see mil - prf - 19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. 3 / separat e samples may be used. 4/ not required for jans. 5 / not required for laser marked devices.
mil - prf - 19500/394g 16 table ii. group e inspection (all quality levels) ? for qualification only . * inspection mil - std - 750 qualification method conditions subgroup 1 temperature cycling (air to air) 1051 test condition c, 500 cycles 45 devices c = 0 hermetic seal fine leak gross leak 1071 electrical measurements see group a, subgroup 2 herein. subgroup 2 intermittent life 1037 v cb = 10 v dc, 6,000 cycles. 45 devices c = 0 electrical measurements see table i, group a, subgroup 2 herein. subgroups 3, 4, 5, 6, and 7 not applicable subgroup 8 reverse stability 1033 condition a for devices 3 400 v condition b for devices < 400 v 45 devices c = 0
mil - prf - 19500/394g 17 figure 4. maximum operating conditions - dc forward biased mode .
mil - prf - 19500/394g 18 figure 5. speed of response test circuit . notes: 1. an appropriate puls e generator may be substituted. 2. r s 1.0 w noninductive. 3. clamp voltage: 2n4150: 70 v dc +0 v dc, - 5 v dc; 2n5237: 120 v dc +0 v dc, - 5 v dc; 2n5238: 170 v dc +0 v dc, - 5 v dc 4. stancor c - 2691 or equivalent; 2 in series. figure 6. clamped inductive sweep test circuit .
mil - prf - 19500/394g 19 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging activity within the military department or defense agency, or within the mil itary department's system command. packaging data retrieval is available from the managing military department's or defense agency's automated packaging files, cd - rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil - prf - 19500 are applicable to this specification. 6.2 acquisition requirements. acquisition documents shou ld specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation and, if required, the specified issue of individual documents referenced (see 2.2.1). c. lead finish (see 3.4.1). d. typ e designation and quality assurance level. e. packaging requirements (see 5.1). 6.3 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclu sion in qualified manufacturer's list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they pro pose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center, columbus, attn: dscc - vqe, p.o. box 3990, columbus, oh 43216 - 5000.
mil - prf - 19500/394g 20 6.4 suppliers of janhc and jankc die . the qualified die suppliers with the applicable letter version (example, janhca2n4150) will be identified on the qml. j anc ordering information pin manufacturers 43611 34156 2n4150 janhca2n4150 jankca2n4150 janhcb2n4150 jankcb2n4150 6.5 changes from previous issue . the margins of this revision are marked with an asterisk to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notations. bidders and contractors are cautioned to evaluate the requirements of this document based on the ent ire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961 - 2559) dla ? cc review activities: army - mi, sm air force - 19, 71, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil - prf - 19500/394g 2 . document date 5 july 2002 3. document title semiconductor device, transistor, npn, silicon, power switching types: 2n4150, 2n5237, 2n5238, 2n4150s, 2n5237s, and 2n5238s jan, jantx, jantxv, jans, janhc and jankc 4. nature of change (identify paragraph n umber and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (in clude area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614 - 692 - 0510 850 - 0510 614 - 692 - 6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc - vac p.o. box 3990 columbus, oh 43216 - 5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc - lm) 8725 joh n j. kingman, suite 2533 fort belvoir, va 22060 - 6221 telephone (703) 767 - 6888 dsn 427 - 6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

▲Up To Search▲

Price & Availability of JAN2N5237S

	To Download JAN2N5237S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .