BFR193TF document number 85103 rev. 1.3, 28-apr-05 vishay semiconductors www.vishay.com 1 2 1 3 electrostatic sensitive device. observe precautions for handling. 16867 silicon npn planar rf transistor description the main purpose of this bipolar transistor is broad- band amplification up to 2 ghz. in the space-saving 3-pin surface-mount sot-490 package electrical per- formance and reliability are taken to a new level cov- ering a smaller footprint on pc boards than previous packages. in addition to space savings, the sot-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. due to the short length of its leads the sot-490 is also reducing package inductance s resulting in some bet- ter electrical performance. all of these aspects make this device an ideal choice for demanding rf applica- tions. features ? low noise figure ? high transition frequency f t = 8 ghz ? excellent large-signal behaviour ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications for low noise and high gain applications such as power amplifiers up to 2 ghz and for linear broad- band amplifiers. mechanical data typ: BFR193TF case: sot-490 plastic case weight: approx. 2.5 mg pinning: 1 = collector, 2 = base, 3 = emitter parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part marking package BFR193TF rc sot-490 parameter test condition symbol value unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 2v collector current i c 80 ma total power dissipation t amb 45 c p tot 420 mw junction temperature t j 150 c storage temperature range t stg -65 to +150 c e3
www.vishay.com 2 document number 85103 rev. 1.3, 28-apr-05 BFR193TF vishay semiconductors maximum thermal resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit junction ambient 1) r thja 250 k/w parameter test condition symbol min ty p. max unit collector-emitter cut-off current v ce = 20 v, v be = 0 i ces 100 a collector-base cut-off current v cb = 10 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 1 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 12 v collector-emitter saturation voltage i c = 50 ma, i b = 5 ma v cesat 0.1 0.5 v dc forward current transfer ratio v ce = 8 v, i c = 30 ma h fe 50 100 150
BFR193TF document number 85103 rev. 1.3, 28-apr-05 vishay semiconductors www.vishay.com 3 electrical ac characteristics t amb = 25 c, unless otherwise specified package dimensions in mm parameter test condition symbol min ty p. max unit transition frequency v ce = 8 v, i c = 50 ma, f = 1 ghz f t 7.5 ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb 0.6 pf collector-emitter capacitance v ce = 10 v, f = 1 mhz c ce 0.25 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 1.6 pf noise figure v ce = 8 v, i c = 10 ma, z s = z sopt , z l = 50 , f = 900 mhz f1.2db f2.1db power gain v ce = 8 v, i c = 30 ma, z s = z sopt , z l = 50 , f = 900 mhz g pe 15.5 db v ce = 8 v, i c = 30 ma, z s = z sopt , z l = 50 , f = 2 ghz g pe 9.5 db transducer gain v ce = 8 v, i c = 30 ma, f = 900 mhz, z o = 50 |s 21e | 2 14 db v ce = 8 v, i c = 30 ma, f = 2 ghz, z o = 50 |s 21e | 2 7.5 db third order intercept point v ce = 8 v, i c = 50 ma, f = 900 mhz ip 3 34 dbm 16866 iso method e 0.4 (0.016) 0.5 (0.016) 0.65(0.026) 1.15(0.045) 0.1 b 0.1 a 1.5 (0.059) 1.7 (0.066) 0.6 (0.023) 0.8 (0.031) 3 x 0.20 (0.008) 3 x 0.30 (0.012) 1.5 (0.059) 1.7 (0.066) 0.75 (0.029) 0.95 (0.037) 0.10 (0.004) 0.20 (0.008) 0.5 (0.016) 1.0 (0.039)
www.vishay.com 4 document number 85103 rev. 1.3, 28-apr-05 BFR193TF vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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