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inchange semiconductor product specification silicon npn power transistors 2SD526 description ? ? with to-220c package ? complement to type 2sb596 ? good linearity of h fe applications ? power amplifier applications ?recommend for 20 ?? 25w high fidelity audio frequency amplifier output stage pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i b base current 0.4 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD526 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; i b =0 80 v v cesat collector-emitter saturation voltage i c =3 a;i b =0.3 a 1.5 v v be base-emitter voltage i c =3a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =80v ;i e =0 30 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe-1 dc current gain i c =0.5a ; v ce =5v 40 240 h fe-2 dc current gain i c =3a ; v ce =5v 15 f t transition frequency i c =0.5a ; v ce =5v 8 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 90 pf ? h fe-1 classifications r o y 40-80 70-140 120-240
inchange semiconductor product specification 3 silicon npn power transistors 2SD526 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SD526

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