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| 1 MRF5S19090Lr3 MRF5S19090Lsr3 motorola rf device data the rf mosfet line rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for pcn and pcs base station applications with frequencies up to 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2 - carrier n - cdma performance for v dd = 28 volts, i dq = 850 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carrier. adjacent channels measured over a 30 khz bandwidth at f1 - 885 khz and f2 +885 khz. distortion products measured over 1.2288 mhz bandwidth at f1 - 2.5 mhz and f2 +2.5 mhz. peak/avg. = 9.8 db @ 0.01% probability on ccdf. output power ? 18 watts avg. power gain ? 14.5 db efficiency ? 25.8% acpr ? - 51 db im3 ? - 37 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 28 vdc, 1960 mhz, 90 watts cw output power ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? qualified up to a maximum of 32 v dd operation ? low gold plating thickness on leads. l suffix indicates 40 ? nominal. ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain - source voltage v dss 65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 261 1.49 watts w/ c storage temperature range t stg - 65 to +200 c operating junction temperature t j 200 c thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 80 c, 90 w cw case temperature 80 c, 18 w cw r jc 0.67 0.75 c/w (1) mttf calculator available at http://www.motorola.com/semiconductors/rf . select tools/software/application software/calculators to access the mttf calculators by product. (2) refer to an1955/d, thermal measurement methodology of rf power amplifiers. go to http://www.motorola.com/semiconductors/rf . select documentation/application notes - an1955. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF5S19090L/d motorola semiconductor technical data MRF5S19090Lr3 MRF5S19090Lsr3 1990 mhz, 18 w avg., 2 x n - cdma, 28 v lateral n - channel rf power mosfets case 465- 06, style 1 ni - 780 MRF5S19090Lr3 case 465a - 06, style 1 ni - 780s MRF5S19090Lsr3 ? motorola, inc. 2004 rev 1 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . .
MRF5S19090Lr3 MRF5S19090Lsr3 2 motorola rf device data esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2.5 2.7 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 850 madc) v gs(q) ? 3.7 ? vdc drain - source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.26 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 5 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.7 ? pf functional tests (in motorola test fixture, 50 ohm system) 2 - carrier n - cdma, 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth and im3 measured in 1.2288 mhz bandwidth. peak/avg. ratio = 9.8 db @ 0.01% probability on ccdf. common - source amplifier power gain (v dd = 28 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) g ps 13.5 14.5 ? db drain efficiency (v dd = 28 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) 24 25.8 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz); im3 measured over 1.2288 mhz bandwidth at f1 - 2.5 mhz and f2 = +2.5 mhz) im3 ? -37 -35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz); acpr measured over 30 khz bandwidth at f1 - 885 khz and f2 +885 khz) acpr ? -51 -48 dbc input return loss (v dd = 28 vdc, p out = 18 w avg., i dq = 850 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz) irl ? - 14.5 -9 db (1) part is internally matched both on input and output. f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 3 MRF5S19090Lr3 MRF5S19090Lsr3 motorola rf device data z8 0.091 x 1.133 microstrip z9 0.542 x 0.071 microstrip z10 0.450 x 1.133 microstrip z11 0.640 x 0.141 microstrip z12 0.316 x 0.080 microstrip z13 1.209 x 0.080 microstrip pcb arlon gx - 0300 - 55 - 22, 30 mil, r = 2.55 figure 1. mrf5s19090 test circuit schematic z1 0.140 x 0.080 microstrip z2 0.450 x 0.080 microstrip z3 0.140 x 0.080 microstrip z4 0.525 x 0.080 microstrip z5 0.636 x 0.141 microstrip z6 0.340 x 0.050 microstrip z7 0.320 x 1.401 microstrip c3 r2 v gg v dd c9 c13 c8 c15 c6 c7 c1 rf output rf input r1 z1 z2 z3 z4 z5 z6 z9 z11 z12 z13 + dut c12 c11 r4 w1 c2 z10 z8 b1 r3 + c4 c5 c14 z7 + + c10 + table 1. mrf5s19090 test circuit component designations and values part description value, p/n or dwg manufacturer b1 short rf bead 95f786 newark c1 22 pf chip capacitor, b case 100b220cp 500x atc c2 10 pf chip capacitor, b case 100b100cp 500x atc c3, c13 1 f, 50 v smt tantalum capacitors t494c105(1)050as kemet c4, c12 0.1 f chip capacitors, b case cdr33bx104akws kemet c5, c11 1k pf chip capacitors, b case 100b102jp 500x atc c6, c7 4.3 pf chip capacitors, b case 100b4r3jp 500x atc c8 10 f, 35 v smt tantalum capacitor t494d106(1)035as kemet c9, c10 22 f, 35 v smt tantalum capacitors t494x226(1)035as kemet c14 2.7 pf chip capacitor, b case 100b2.7bp 500x atc c15 0.6 ? 4.5 gigatrim variable capacitor 44f3358 newark r1 1 k chip resistor d5534m07b1k00r newark r2 560 k chip resistor cr1206 564jt newark r3, r4 12 chip resistors rm73b2b120jt garrett electronics w1 1 turn 14 gauge wire f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . MRF5S19090Lr3 MRF5S19090Lsr3 4 motorola rf device data figure 2. mrf5s19090 test circuit component layout b1 r2 c4 c12 c9 c3 c10 c5 c11 c6 c7 c8 w1 r4 c15 c14 c13 c1 r3 r1 c2 v gg v dd cut out area rev 02 mrf5s19090 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 5 MRF5S19090Lr3 MRF5S19090Lsr3 motorola rf device data typical characteristics 6 16 1860 ?60 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier n - cdma broadband performance g ps , power gain (db) , drain im3 (dbc), acpr (dbc) ?50 ?10 ?20 ?30 ?40 input return loss (db) irl, v dd = 28 vdc, p out = 18 w (avg.), i dq = 850 ma 2?carrier n?cdma, 2.5 mhz carrier spacing 1.2288 mhz channel bandwidth peak/avg. = 9.8 db @ 0.01% probability (ccdf) 14 30 12 20 10 ?20 8 ?40 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080 0 efficiency (%) 100 12 17 1 1100 ma i dq = 1300 ma 850 ma p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurement, 2.5 mhz tone spacing 650 ma 450 ma 10 16 15 14 13 100 ?55 ?15 1 p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power im3, third order intermodulation distortion (dbc) 1100 ma 1300 ma 850 ma v dd = 28 vdc f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurement, 2.5 mhz tone spacing 650 ma i dq = 450 ma 10 ?20 ?25 ?30 ?35 ?40 ?45 ?50 10 ?55 ?25 0.1 7th order two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, v dd = 28 vdc, p out = 90 w (pep), i dq = 850 ma two?tone measurements, center frequency = 1960 mhz ?30 ?35 ?40 ?45 ?50 1 5th order 3rd order 42 45 56 31 p3db = 51.21 dbm (132.13 w) p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) v dd = 28 vdc, i dq = 850 ma pulsed cw, 8 sec(on), 1 msec(off) center frequency = 1960 mhz 41 p1db = 50.82 dbm (120.78 w) ideal actual 55 54 53 52 51 50 49 48 47 46 32 33 34 35 36 37 38 39 40 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . MRF5S19090Lr3 MRF5S19090Lsr3 6 motorola rf device data typical characteristics 0 40 1 ?65 ?25 im3 g ps acpr p out , output power (watts) avg. figure 8. 2 - carrier n - cdma acpr, im3, power gain and drain efficiency versus output power im3 (dbc), acpr (dbc) , drain efficiency (%), g ps , power gain (db) v dd = 28 vdc, i dq = 850 ma f1 = 1958.75 mhz, f2 = 1961.25 mhz 2 x n?cdma, 2.5 mhz @ 1.2288 mhz bandwidth peak/avg. = 9.8 db @ 0.01% probability (ccdf) im3 35 ?30 30 ?35 25 ?40 20 ?45 15 ?50 10 ?55 5 ?60 10 ?100 0 f, frequency (mhz) figure 9. 2 - carrier n - cdma spectrum (db) ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 220 10 9 100 t j , junction temperature ( c) figure 10. mtbf factor versus junction temperature mtbf factor (hours x amps ) 2 this above graph displays calculated mtbf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mtbf factor by i d 2 for mtbf in a particular application. 10 8 10 7 10 6 120 140 160 180 200 ?acpr @ 30 khz integrated bw +acpr @ 30 khz integrated bw ?im3 @ 1.2288 mhz integrated bw +im3 @ 1.2288 mhz integrated bw 1.2288 mhz channel bw 6 1.5 4.5 3 0 ?1.5 ?3 ?4.5 ?6 ?7.5 7.5 f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 7 MRF5S19090Lr3 MRF5S19090Lsr3 motorola rf device data v dd = 28 v, i dq = 850 ma, p out = 18 w avg. figure 11. series equivalent input and output impedance f = 1930 mhz f = 1990 mhz z o = 10 ? f = 1930 mhz f = 1990 mhz f mhz z source ? z load ? 1930 1960 1990 2.98 - j5.12 4.06 - j4.64 3.36 - j4.65 2.07 - j1.31 2.02 - j1.18 1.93 - j1.01 z load * z source z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . MRF5S19090Lr3 MRF5S19090Lsr3 8 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 9 MRF5S19090Lr3 MRF5S19090Lsr3 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . MRF5S19090Lr3 MRF5S19090Lsr3 10 motorola rf device data notes f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . 11 MRF5S19090Lr3 MRF5S19090Lsr3 motorola rf device data package dimensions case 465 - 06 issue f ni - 780 MRF5S19090Lr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) case 465a - 06 issue f ni - 780s MRF5S19090Lsr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . MRF5S19090Lr3 MRF5S19090Lsr3 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?t ypical? parameters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2004 how to reach us: usa / europe / locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3 - 20 - 1, minami - azabu, minato - ku, tokyo 106 - 8573, japan p.o. box 5405, denver, colorado 80217 81-3- 3440 - 3569 1 - 800 - 521 - 6274 or 480 - 768 - 2130 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industria l estate, tai po, n.t., hong kong 852 - 26668334 home page : http://motorola.com/semiconductors MRF5S19090L/d ? f r e e s c a l e s e m i c o n d u c t o r , i freescale semiconductor, inc. f o r m o r e i n f o r m a t i o n o n t h i s p r o d u c t , g o t o : w w w . f r e e s c a l e . c o m n c . . . |
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