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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC3563 description high collector-emitter breakdown voltage- : v (br)ceo = 450v (min) high switching speed applications switching regulator and high vo ltage switching applications. high speed dc-dc converter applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 600 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a collector power dissipation @ t c =25 40 p c collector power dissipation @ t a =25 2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3563 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 450 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 600 v v ce( sat ) collector-emitter saturation voltage i c = 4a; i b = 0.8a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 4a; i b = 0.8a b 1.5 v i cbo collector cutoff current v cb = 500v; i e = 0 100 a i ebo emitter cutoff current v eb = 7v; i c = 0 1 ma h fe-1 dc current gain i c = 0.5a; v ce = 5v 20 h fe-2 dc current gain i c = 4a; v ce = 5v 8 isc website www.iscsemi.cn 2 |
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