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savantic semiconductor product specification 1 silicon npn power transistors 2SD2634 d escription with to-3pml package high speed high breakdown voltage high reliability built-in damper diode applications color tv horizontal deflection output pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i cm collector current-peak 20 a t c =25 65 p c collector power dissipation 3 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pml) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2634 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 800 v v cesat collector-emitter saturation voltage i c =4.5a;i b =0.9a 3 v v besat base-emitter saturation voltage i c =4.5a;i b =0.9a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 a i ces collector cut-off current v ce =1500v ;r be =0 1.0 ma i ebo emitter cut-off current v eb =4v; i c =0 40 130 ma h fe-1 dc current gain i c =5a ; v ce =5v 5 8 h fe-2 dc current gain i c =1a ; v ce =5v 10 v f diode forward voltage i ec =7a 2 v t f fall time i c =3a;r l =66.7 a i b1 =0.6a;-i b2 =1.2a;v cc =200v 0.3 s savantic semiconductor product specification 3 silicon npn power transistors 2SD2634 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SD2634 |
Price & Availability of 2SD2634
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