elektronische bauelemente MMBT5401 pnp silicon general purposetransistor 01-june-2002 rev. a page 1 of 3 top view a l c b d g h j f k e 1 2 3 1 2 3 features ideal for medium power amplification and switching marking 2l absolute maximum ratings parameter symbol ratings unit collector to emitter voltage v ceo -150 v collector to base voltage v cbo -160 v emitter to base voltage v ebo -5.0 v collector current - continuous i c -500 ma thermal characteristics parameter symbol ratings unit total power dissipation t a = 25c derate above 25c p d 225 1.8 mw mw / thermal resistance, junction to ambient r ja 556 / w total power dissipation alumina substrate, (2) t a = 25c derate above 25c p d 300 2.4 mw mw / thermal resistance, junction to ambient r ja 417 / w junction, storage temperature t j , t stg -55 ~ +150 electrical characteristics (t a = 25c unless otherwise noted) test conditions symbol min. max. unit off characteristics collector?emitter breakdown voltage i c = -1.0 ma, i b = 0 bv ceo -150 - v collector?base breakdown voltage i c = -100 a, i e = 0 bv cbo -160 - v emitter?base breakdown voltage i e = -10 a, i c = 0 bv ebo -5.0 - v collector cutoff current v cb = -120 v, i e = 0 v cb = -120 v, i e = 0, t a = 100c i ces - -100 -100 na a on characteristics dc current gain i c = ?1.0 ma, v ce = ?5.0 v i c = ?10 ma, v ce = ?5.0 v i c = ?50 ma, v ce = ?5.0 v h fe 80 100 50 - 200 - - collector?emitter saturation voltage i c = ?10 ma, i b = ?1.0 ma i c = ?50 ma, i b = ?5.0 ma v ce(sat) - -0.2 -0.5 v base?emitter saturation voltage i c = ?10 ma, i b = ?1.0 ma i c = ?50 ma, i b = ?5.0 ma v be(sat) - -1.0 -1.0 v small signal characteristics current-gain - bandwidth product i c =-10 ma, v ce = -10 v, f = 100 mhz f t 100 - mhz output capacitance v cb = -10 v, i e = 0, f = 1.0 mhz c obo - 6.0 pf small signal current gain i c = -1.0 ma, v ce =-10 v, f = 1.0 khz h fe 50 200 - noise figure i c = ?200 a, v ce = ?5.0 v, r s = 10 , f = 1.0 khz nf - 8.0 db note: 1. fr-5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. rohs compliant product a suffix of ?-c? specifies halogen & lead-free sot-23 millimete r millimete r ref. min. max. ref. min. max. a 2.80 3.00 g 0.10 ref. b 2.25 2.55 h 0.55 ref. c 1.20 1.40 j 0.08 0.15 d 0.90 1.15 k 0.5 ref. e 1.80 2.00 l 0.95 typ. f 0.30 0.50
elektronische bauelemente MMBT5401 pnp silicon general purposetransistor 01-june-2002 rev. a page 2 of 3 characteristics curve figure 1. dc current gain i c , collector current (ma) 30 100 150 200 0.1 h , current gain 0.5 2.0 3.0 10 0.2 0.3 20 1.0 5.0 fe t j = 125 c 25 c -55 c 70 50 20 30 50 100 v ce = -1.0 v v ce = -5.0 v figure 2. collector saturation region i b , base current (ma) 1.0 0.1 0.5 2.0 10 0.2 1.0 5.0 20 50 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 figure 3. collector cut-off region v be , base-emitter voltage (volts) v ce , collector-emitter voltage (volts) , collector current ( a) i c 10 3 0.1 0.3 0.2 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i c = 1.0 ma 10 ma 30 ma 100 ma v ce = 30 v i c = i ces t j = 125 c 75 c 25 c reverse forward
elektronische bauelemente MMBT5401 pnp silicon general purposetransistor 01-june-2002 rev. a page 3 of 3 characteristics curve figure 4. "on" voltages i c , collector current (ma) 0.4 0.6 0.7 1.0 0.2 figure 5. temperature coefficients i c , collect or current (ma) v, voltage (volts) 0 t j = 25 c v ce(sat) @ i c / i b = 10 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 c, capacitance (pf) 100 t j = 25 c c ibo figure 6. switching time test circuit v r , reverse voltage (volts) 0.9 0.8 0.5 0.3 0.1 v be(sat) @ i c / i b = 10 0.3 3.0 30 figure 7. capacitances 10.2 v v in 10 s input pulse v bb + 8.8 v 100 r b 5.1k 0.25 f v in 100 1n914 v out r c v cc -30 v 3.0k t r , t f 10 ns duty cycle = 1.0% values shown are for i c @ 10 ma 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.3 3.0 30 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 t j = -55 c to 135 c vc for v ce(sat) vb for v be(sat) c obo 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 0.7 7.0 t, time (ns) 1000 100 200 300 500 700 10 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 30 50 100 200 i c , collector current (ma) figure 8. turn-on time t d @ v be(off) = 1.0 v v cc = 120 v t r @ v cc = 30 v t r @ v cc = 120 v t, time (ns) 2000 100 200 300 500 700 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 30 50 100 200 i c , collector current (ma) figure 9. turn-off time 1000 t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v i c / i b = 10 t j = 25 c v , temperature coefficient (mv/ c) i c / i b = 10 t j = 25 c
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