page . 1 july 20.2010-rev.00 pjsd03ts~pjsd36ts voltage power 3~36 volts 120 watts single line tvs diode for esd protection portable electronics ? 120 watts peak pules power( tp=8/20 s) ? small package for use in portable electronics ? suitable replacement for mlv?s in esd protection applications ? low clamping voltage and leakage current ? in compliance with eu rohs 2002/95/ec directives maximum ratings and electrical chatacteristics ? case: sod-523 plastic ? terminals : solderable per mil-std-750,method 2026 ? approx weight: 0.0014 grams ? marking : pjsd03ts : kd pjsd05ts : ke pjsd07ts : kf pjsd08ts : kr PJSD12TS : le pjsd15ts : lm pjsd24ts : lz pjsd36ts : mp applications features absolute maximum rating rating symbol value units peak pulse power dissipation (tp=8/20 s) p pp 120 w esd voltage v esd 25 kv operating temperature t j -50 to +150 o c storage temperature t stg -50 to +150 o c pjsd03ts parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---3.3v reverse breakdown voltage v br i br =1ma 4 - - v reverse leakage current i r v r =3.3v - - 200 a clamping voltage(8/20 s) v c i pp =5a - - 6.5 v off state junction capacitance c j 0vdc bias=f=1mhz - - 200 pf off state junction capacitance c j 3.3vdc bias=f=1mhz - - 100 pf 1 2 cathode anode electrical chatacteristics
page . 2 july 20.2010-rev.00 pjsd03ts~pjsd36ts pjsd05ts parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---5v reverse breakdown voltage v br i br =1ma 6.0 - - v reverse leakage current i r v r =5v - - 5 a clamping voltage(8/20 s) v c i pp =5a - - 9 v off state junction capacitance c j 0vdc bias=f=1mhz - - 110 pf off state junction capacitance c j 5vdc bias=f=1mhz - - 60 pf pjsd07ts parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---7.0v reverse breakdown voltage v br i br =1ma 7.5 - - v reverse leakage current i r v r =7v - - 150 na clamping voltage(8/20 s) v c i pp =8.8a - - 22.7 v off state junction capacitance c j 0vdc bias=f=1mhz - - 85 pf pjsd08ts parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---8v reverse breakdown voltage v br i br =1ma 8.5 - - v reverse leakage current i r v r =8v - - 5 a clamping voltage(8/20 s) v c i pp =5a - - 13 v off state junction capacitance c j 0vdc bias=f=1mhz - - 70 pf PJSD12TS parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---12v reverse breakdown voltage v br i br =1ma 13.3 - - v reverse leakage current i r v r =12v - - 5 a clamping voltage(8/20 s) v c i pp =5a - - 17 v off state junction capacitance c j 0vdc bias=f=1mhz - - 60 pf
page . 3 july 20.2010-rev.00 pjsd03ts~pjsd36ts pjsd15ts parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---15v reverse breakdown voltage v br i br =1ma 16.6 - - v reverse leakage current i r v r =15v - - 5 a clamping voltage(8/20 s) v c i pp =5a - - 22 v off state junction capacitance c j 0vdc bias=f=1mhz - - 50 pf pjsd24ts parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---24v reverse breakdown voltage v br i br =1ma 26.7 - - v reverse leakage current i r v r =24v - - 5 a clamping voltage(8/20 s) v c i pp =3a - - 32 v off state junction capacitance c j 0vdc bias=f=1mhz - - 25 pf pjsd36ts parameter symbol conditions min. typical max. units reverse stand-off voltage v rwm ---36v reverse breakdown voltage v br i br =1ma 40 - - v reverse leakage current i r v r =36v - - 5 a clamping voltage(8/20 s) v c i pp =1a - - 55 v off state junction capacitance c j 0vdc bias=f=1mhz - - 20 pf
page . 4 july 20.2010-rev.00 pjsd03ts~pjsd36ts 0.01 1 10 100 1000 10000 10000 1000 100 10 t -pulse duration- s d t -pulse duration- s d 0 5 10 15 20 25 30 120 100 80 60 40 20 0 t-time- s t-time- s 0 25 50 75 100 125 150 100 80 60 40 20 0 t -lead temperature- c l o t -lead temperature- c l o p -peak pulse current-watts pp i -peak pulse current-% of i pp pp t=ti /2 dpp t=t i/2 dpp peak pulse power 8/20 s peak pulse power 8/20 s average power average power e -t e -t t f t f peak value i pp peak value i pp test waveform parameters test waveform parameters %of rated power fig. 1- pulse wave form fig. 3-peak pulse power vs pulse time fig. 2-power derating curve
page . 5 july 20.2010-rev.00 legal statement copyright panjit international, inc 2010 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. mounting pad layout order information ? packing information t/r - 12k per 13" plastic reel t/r - 5k per 7" plastic reel pjsd03ts~pjsd36ts
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