schottky barrier diode RB551SS-30 l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l features 1)small mold type (kmd2) 2)high reliability 3)low v f l structure l construction silicon epitaxial planer l absolute maximum ratings (ta=25 ? c) symbol v rm v r average rectified forward current io i fsm tj tstg l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions v f1 - - 0.36 v v f2 - - 0.47 v i r - - 100 a reverse voltage (repetitive peak) 30 v l taping dimensions (unit : mm) parameter limits unit junction temperature 125 ? c reverse voltage (dc) 20 v 0.5 a forward current surge peak(60hz ? 1cyc.) 5 a storage temperature - 40 to + 125 ? c parameter forward voltage i f =100ma i f =500ma reverse current v r =20v rohm : kmd2 jeita : - jedec : - dot (year week factory) 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. kmd2 0.8 1.2 0.5 1.2 0.05 0.6 0.03 0.7 0.05 0.8 0.05 1.6 0.05 0.4 0.05 0 0.03 www.datasheet.co.kr datasheet pdf - http://www..net/
RB551SS-30 0.01 0.1 1 0 100 200 300 400 500 600 700 tj=125 c tj=25 c tj=75 c forward voltage v f (mv) v f - i f characteristics forward current:i f (a) 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 tj=125 c tj=25 c tj=75 c reverse current:i r ( m a) reverse voltage v r (v) v r - i r characteristics 1 10 100 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 240 260 280 300 320 340 v f dispersion map forward voltage:v f (mv) ave:397.5mv i f =500ma tj=25 c 10 100 1000 v r =20v tj=25 c ave:45.7 m a reverse current:i r ( m a) i r dispersion map 0 10 20 30 40 50 60 70 80 90 100 f=1mhz v r =0v tj=25 c ave:71.4pf capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
RB551SS-30 0 5 10 15 20 25 30 ave:13.6a i fsm dispersion map its ability of peak surge forward current:i fsm (a) 8.3ms i fsm 1cyc. 0 5 10 15 20 i f =0.1a i r =0.1a irr=0.10 i r tj=25 c ave:6.7ns trr dispersion map reverse recovery time:trr(ns) 1 10 100 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1 10 100 time i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) on glass - epoxy substrate soldering land 50mm time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 0.1 0.2 0.3 0.4 0 0.2 0.4 0.6 0.8 1 d.c. d=1/2 sin( 180) reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
RB551SS-30 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 25 50 75 100 125 d.c. d=1/2 sin( 180) ambient temperature:ta( c ) derating curve(io - ta) average rectified forward current:io(a) t tj=125 c d=t/t t v r io v r =10v 0a 0v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 25 50 75 100 125 d.c. d=1/2 sin( 180) average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=125 c d=t/t t v r io v r =10v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 ave 18.5kv c=100pf r=1.5k ave 1.84kv electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes www.datasheet.co.kr datasheet pdf - http://www..net/
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