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83947AYI-147 www.idt.com rev. a august 12, 2010 1 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer g eneral d escription the ics83947i-147 is a low skew, 1-to-9 lvcmos/lvttl fanout buffer. the low impedance lvcmos/lvttl outputs are designed to drive 50 series or parallel terminated transmission lines. the effective fanout can be increased from 9 to 18 by utilizing the ability of the outputs to drive two series terminated lines. guaranteed output and part-to-part skew characteristics make the ics83947i-147 ideal for high performance, 3.3v or 2.5v single ended applications. b lock d iagram p in a ssignment f eatures ? 9 lvcmos/lvttl outputs ? selectable clk0 and clk1 can accept the following input levels: lvcmos and lvttl ? maximum output frequency: 250mhz ? output skew: 115ps (maximum) ? part-to-part skew: 500ps (maximum) ? additive phase jitter, rms: 0.02ps (typical) @ 3.3v ? full 3.3v or 2.5v operating supply ? -40c to 85c ambient operating temperature 32-lead lqfp 7mm x 7mm x 1.4mm package body y package top view 32 31 30 29 28 27 26 25 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 gnd q3 v ddo q4 gnd q5 v ddo gnd gnd clk_sel clk0 clk1 clk_en oe v dd gnd gnd q6 v ddo q7 gnd q8 v ddo gnd gnd q2 v ddo q1 gnd q0 v ddo gnd ics83947i-147 q0 q1 q2 q3 q4 q5 q6 q7 q8 clk0 clk1 0 1 clk_en clk_sel d q le oe
83947AYI-147 www.idt.com rev. a august 12, 2010 2 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer t able 1. p in d escriptions t able 2. p in c haracteristics t able 3. o utput e nable and c lock e nable f unction t able r e b m u ne m a ne p y tn o i t p i r c s e d , 7 1 , 6 1 , 2 1 , 9 , 8 , 1 2 3 , 9 2 , 5 2 , 4 2 , 0 2 d n gr e w o p. d n u o r g y l p p u s r e w o p 2l e s _ k l ct u p n ip u l l u p , w o l n e h w . 1 k l c s t c e l e s , h g i h n e h w . t u p n i t c e l e s k c o l c . s l e v e l e c a f r e t n i l t t v l / s o m c v l . 0 k l c s t c e l e s 4 , 31 k l c , 0 k l ct u p n ip u l l u p. s l e v e l e c a f r e t n i l t t v l / s o m c v l . s t u p n i k c o l c e c n e r e f e r 5n e _ k l ct u p n ip u l l u p. s l e v e l e c a f r e t n i l t t v l / s o m c v l . e l b a n e k c o l c 6e ot u p n ip u l l u p. s l e v e l e c a f r e t n i l t t v l / s o m c v l . e l b a n e t u p t u o 7v d d r e w o p. n i p y l p p u s e r o c 1 3 , 7 2 , 2 2 , 8 1 , 4 1 , 0 1v o d d r e w o p. s n i p y l p p u s t u p t u o , 1 2 , 9 1 , 5 1 , 3 1 , 1 1 0 3 , 8 2 , 6 2 , 3 2 , 5 q , 6 q , 7 q , 8 q 0 q , 1 q , 2 q , 3 q , 4 q t u p t u o . s t u p t u o k c o l c 8 q u r h t 0 q . s l e v e l e c a f r e t n i l t t v l / s o m c v l : e t o n p u l l u p . s e u l a v l a c i p y t r o f , s c i t s i r e t c a r a h c n i p , 2 e l b a t e e s . s r o t s i s e r t u p n i l a n r e t n i o t s r e f e r s t u p n i l o r t n o ct u p t u o e on e _ k l c8 q : 0 q 0x z - i h 10 w o l 11 t u p n i k l c s w o l l o f l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u c n i e c n a t i c a p a c t u p n i 4f p c d p e c n a t i c a p a c n o i t a p i s s i d r e w o p ) t u p t u o r e p ( 2 1f p r p u l l u p r o t s i s e r p u l l u p t u p n i 1 5k r t u o e c n a d e p m i t u p t u o 7
83947AYI-147 www.idt.com rev. a august 12, 2010 3 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer t able 4a. p ower s upply dc c haracteristics , v dd = v ddo = 3.3v0.3v or 2.5v5%, t a = -40c to 85c t able 4b. lvcmos/lvttl dc c haracteristics , v dd = v ddo = 3.3v0.3v, t a = -40c to 85c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u v d d e g a t l o v y l p p u s e r o c 0 . 33 . 36 . 3v 5 7 3 . 25 . 25 2 6 . 2v v o d d e g a t l o v y l p p u s t u p t u o 0 . 33 . 36 . 3v 5 7 3 . 25 . 25 2 6 . 2v i d d t n e r r u c y l p p u s t u p n i 0 5a m i o d d t n e r r u c y l p p u s t u p t u o 9a m a bsolute m aximum r atings supply voltage, v dd 4.6v inputs, v i -0.5v to v dd + 0.5 v outputs, v o -0.5v to v ddo + 0.5v package thermal impedance, ja 47.9c/w (0 lfpm) storage temperature, t stg -65c to 150c note: stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these ratings are stress specifications only. functional operation of product at these conditions or any conditions be- yond those listed in the dc characteristics or ac character- istics is not implied. exposure to absolute maximum rating conditions for extended periods may affect product reliability. t able 4b. lvcmos/lvttl dc c haracteristics , v dd = v ddo = 2.5v5%, t a = -40c to 85c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u v h i e g a t l o v h g i h t u p n i 2v d d 3 . 0 +v v l i e g a t l o v w o l t u p n i 1 k l c , 0 k l c3 . 0 -3 . 1v e o , n e _ k l c , l e s _ k l c3 . 0 -8 . 0v i h i t n e r r u c h g i h t u p n i , e o , 1 k l c , 0 k l c n e _ k l c , l e s _ k l c v d d v = n i v 5 2 6 . 2 =5a i l i t n e r r u c w o l t u p n i , e o , 1 k l c , 0 k l c n e _ k l c , l e s _ k l c v d d , v 5 2 6 . 2 3 = v n i v 0 = 0 5 1 -a v h o 1 e t o n ; e g a t l o v h g i h t u p t u o 8 . 1v v l o 1 e t o n ; e g a t l o v w o l t u p t u o 5 . 0v 0 5 h t i w d e t a n i m r e t s t u p t u o : 1 e t o n v o t o d d , n o i t c e s n o i t a m r o f n i t n e m e r u s a e m r e t e m a r a p e e s . 2 / t s e t d a o l t u p t u o v 5 . 2 . m a r g a i d t i u c r i c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u v h i e g a t l o v h g i h t u p n i 26 . 3v v l i e g a t l o v w o l t u p n i 8 . 0v i n i t n e r r u c t u p n i , e o , 1 k l c , 0 k l c n e _ k l c , l e s _ k l c 0 0 1 -a v h o 1 e t o n ; e g a t l o v h g i h t u p t u oi h o a m 0 2 - =5 . 2v v l o 1 e t o n ; e g a t l o v w o l t u p t u oi l o a m 0 2 =4 . 0v 0 5 h t i w d e t a n i m r e t s t u p t u o : 1 e t o n v o t o d d , n o i t c e s n o i t a m r o f n i t n e m e r u s a e m r e t e m a r a p e e s . 2 / t s e t d a o l t u p t u o v 3 . 3 . m a r g a i d t i u c r i c
83947AYI-147 www.idt.com rev. a august 12, 2010 4 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer t able 5a. ac c haracteristics , v dd = v ddo = 3.3v0.3v, t a = -40c to 85c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u f x a m y c n e u q e r f t u p t u o 0 5 2z h m t d p 1 e t o n , y a l e d n o i t a g a p o r pf z h m 0 5 22 2 . 4s n t ) o ( k s5 , 2 e t o n ; w e k s t u p t u o n o d e r u s a e m v @ e g d e g n i s i r o d d 2 / 5 1 1s p t ) p p ( k s5 , 3 e t o n ; w e k s t r a p - o t - t r a p n o d e r u s a e m v @ e g d e g n i s i r o d d 2 / 0 0 5s p ) ? ( t i j t , r e t t i j e s a h p e v i t i d d a r e f f u b e s a h p e v i t i d d a o t r e f e r ; s m r n o i t c e s r e t t i j ) z h m 0 2 o t z h k 2 1 ( 2 . 0 s p t r t / f e m i t l l a f / e s i r t u p t u ov 0 . 2 o t v 8 . 02 . 01s n t w p h t d i w e s l u p t u p t u oz h m 3 3 1 > ft d o i r e p 1 - 2 /t d o i r e p 1 + 2 /s n c d oe l c y c y t u d t u p t u of z h m 3 3 10 40 6% t n e 4 e t o n ; e m i t e l b a n e t u p t u o 0 1s n t s i d 4 e t o n ; e m i t e l b a s i d t u p t u o 0 1s n t s e m i t p u t e s e l b a n e k c o l c0s n t s e m i t d l o h e l b a n e k c o l c1s n . e s i w r e h t o d e t o n s s e l n u z h m 0 5 2 o t l a u q e r o n a h t s s e l s e i c n e u q e r f t a d e r u s a e m s r e t e m a r a p l l a v m o r f d e r u s a e m : 1 e t o n d d v o t t u p n i e h t f o 2 / o d d . t u p t u o e h t f o 2 / v t a d e r u s a e m . s n o i t i d n o c d a o l l a u q e h t i w d n a e g a t l o v y l p p u s e m a s e h t t a s t u p t u o n e e w t e b w e k s s a d e n i f e d : 2 e t o n o d d . 2 / h t i w d n a s e g a t l o v y l p p u s e m a s e h t t a g n i t a r e p o s e c i v e d t n e r e f f i d n o s t u p t u o n e e w t e b w e k s s a d e n i f e d : 3 e t o n v t a d e r u s a e m e r a s t u p t u o e h t , e c i v e d h c a e n o s t u p n i f o e p y t e m a s e h t g n i s u . s n o i t i d n o c d a o l l a u q e o d d . 2 / . n o i t c u d o r p n i d e t s e t t o n . n o i t a z i r e t c a r a h c y b d e e t n a r a u g e r a s r e t e m a r a p e s e h t : 4 e t o n . 5 6 d r a d n a t s c e d e j h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h t : 5 e t o n t able 5b. ac c haracteristics , v dd = v ddo = 2.5v 5%, t a = -40c to 85c l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u f x a m y c n e u q e r f t u p t u o 0 5 2z h m t d p 1 e t o n , y a l e d n o i t a g a p o r pf z h m 0 5 24 . 25 . 4s n t ) o ( k s5 , 2 e t o n ; w e k s t u p t u o n o d e r u s a e m v @ e g d e g n i s i r o d d 2 / 0 3 1s p t ) p p ( k s5 , 3 e t o n ; w e k s t r a p - o t - t r a p n o d e r u s a e m v @ e g d e g n i s i r o d d 2 / 0 0 6s p t ) ? ( t i j , r e t t i j e s a h p e v i t i d d a r e f f u b e s a h p e v i t i d d a o t r e f e r ; s m r n o i t c e s r e t t i j ) z h m 0 2 o t z h k 2 1 (1 . 0s p t r t / f e m i t l l a f / e s i r t u p t u o% 0 8 - % 0 20 0 30 0 8s p t w p h t d i w e s l u p t u p t u ot d o i r e p 2 . 1 - 2 /t d o i r e p 2 . 1 + 2 /s n t n e 4 e t o n ; e m i t e l b a n e t u p t u o 0 1s n t s i d 4 e t o n ; e m i t e l b a s i d t u p t u o 0 1s n t s e m i t p u t e s e l b a n e k c o l c0s n t s e m i t d l o h e l b a n e k c o l c1s n . e s i w r e h t o d e t o n s s e l n u z h m 0 5 2 o t l a u q e r o n a h t s s e l s e i c n e u q e r f t a d e r u s a e m s r e t e m a r a p l l a v m o r f d e r u s a e m : 1 e t o n d d v o t t u p n i e h t f o 2 / o d d . t u p t u o e h t f o 2 / v t a d e r u s a e m . s n o i t i d n o c d a o l l a u q e h t i w d n a e g a t l o v y l p p u s e m a s e h t t a s t u p t u o n e e w t e b w e k s s a d e n i f e d : 2 e t o n o d d . 2 / h t i w d n a s e g a t l o v y l p p u s e m a s e h t t a g n i t a r e p o s e c i v e d t n e r e f f i d n o s t u p t u o n e e w t e b w e k s s a d e n i f e d : 3 e t o n v t a d e r u s a e m e r a s t u p t u o e h t , e c i v e d h c a e n o s t u p n i f o e p y t e m a s e h t g n i s u . s n o i t i d n o c d a o l l a u q e o d d . 2 / . n o i t c u d o r p n i d e t s e t t o n . n o i t a z i r e t c a r a h c y b d e e t n a r a u g e r a s r e t e m a r a p e s e h t : 4 e t o n . 5 6 d r a d n a t s c e d e j h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h t : 5 e t o n
83947AYI-147 www.idt.com rev. a august 12, 2010 5 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer a dditive p hase j itter the spectral purity in a band at a specific offset from the funda- mental compared to the power of the fundamental is called the dbc phase noise. this value is normally expressed using a phase noise plot and is most often the specified plot in many applications. phase noise is defined as the ratio of the noise power present in a 1hz band at a specified offset from the fun- damental frequency to the power value of the fundamental. this ratio is expressed in decibels (dbm) or a ratio of the power in as with most timing specifications, phase noise measurements have issues. the primary issue relates to the limitations of the equipment. often the noise floor of the equipment is higher than the noise floor of the device. this is illustrated above. the de- the 1hz band to the power in the fundamental. when the re- quired offset is specified, the phase noise is called a dbc value, which simply means dbm at a specified offset from the funda- mental. by investigating jitter in the frequency domain, we get a better understanding of its effects on the desired application over the entire time record of the signal. it is mathematically possible to calculate an expected bit error rate given a phase noise plot. vice meets the noise floor of what is shown, but can actually be lower. the phase noise is dependant on the input source and measurement equipment. additive phase jitter, rms @ 156.25mhz (12khz to 20mhz) = 0.01ps typical @ 2.5v 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 -170 -180 -190 1k 10k 100k 1m 10m 100m o ffset f rom c arrier f requency (h z ) ssb p hase n oise dbc/h z 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 -170 -180 -190 1k 10k 100k 1m 10m 100m o ffset f rom c arrier f requency (h z ) ssb p hase n oise dbc/h z additive phase jitter, rms @ 156.25mhz (12khz to 20mhz) = 0.02ps typical @ 3.3v
83947AYI-147 www.idt.com rev. a august 12, 2010 6 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer t pd v dd 2 v ddo 2 p arameter m easurement i nformation 2.5v o utput l oad ac t est c ircuit 3.3v o utput l oad ac t est c ircuit scope qx lvcmos 1.65v 0.15v -1.65v 0.15v scope qx lvcmos 1.25v5% -1.25v5% p art - to -p art s kew p ropagation d elay o utput d uty c ycle /p ulse w idth /p eriod clock outputs 0.8v 2v 2v 0.8v t r t f t sk(o) v ddo 2 v ddo 2 qx qy o utput s kew t sk(pp) v ddo 2 v ddo 2 qx qy part 1 part 2 clk0,clk1 q0:q8 q0:q8 3.3v o utput r ise /f all t ime clock outputs 20% 80% 80% 20% t r t f t pw t period v ddo 2 v ddo 2 v ddo 2 t pw t period odc = v dd , v ddo v dd , v ddo 2.5v o utput r ise /f all t ime gnd gnd
83947AYI-147 www.idt.com rev. a august 12, 2010 7 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer a pplication s chematic e xample figure 1 shows an example of ics83947i-147 application sche- matic. in this example, the device is operated at v cc =3.3v. the decoupling capacitors should be located as close as possible to the power pin. the input is driven by a 3.3v lvcmos driver. c4 0.1u vcc zo = 50 ohm r3 43 r2 43 r1 43 c2 0.1u (u1-22) c3 0.1u c1 0.1u c3 0.1u (u1-10) vddo (u1-18) c5 0.1u vddo (u1-14) zo = 50 u1 ics83947i-147 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 32 31 30 29 28 27 26 25 gnd clk_sel clk0 clk1 clk_en oe vdd gnd gnd vddo q8 gnd q7 vddo q6 gnd gnd vddo q5 gnd q4 vddo q3 gnd gnd vddo q0 gnd q1 vddo q2 gnd vcc vdd=3.3v lvcmos zo = 50 zo = 50 ohm (u1-27) vdd v ddo=3.3v lvcmos c2 0.1u (u1-31) r3 43 for the lvcmos output drivers, only one termination example is shown in this schematic. additional termination approaches are shown in the lvcmos termination application note (refer to ics website). f igure 1. ics83947i-147 s chematic l ayout
83947AYI-147 www.idt.com rev. a august 12, 2010 8 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer r eliability i nformation t ransistor c ount the transistor count for ics83947i-147 is: 1040 t able 6. ja vs . a ir f low t able for 32 l ead lqfp ja by velocity (linear feet per minute) 0 200 500 single-layer pcb, jedec standard test boards 67.8c/w 55.9c/w 50.1c/w multi-layer pcb, jedec standard test boards 47.9c/w 42.1c/w 39.4c/w note: most modern pcb designs use multi-layered boards. the data in the second row pertains to most designs.
83947AYI-147 www.idt.com rev. a august 12, 2010 9 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer p ackage o utline - y s uffix for 32 l ead lqfp t able 7. p ackage d imensions n o i t a i r a v c e d e j s r e t e m i l l i m n i s n o i s n e m i d l l a l o b m y s a b b m u m i n i ml a n i m o nm u m i x a m n 2 3 a - -- -0 6 . 1 1 a 5 0 . 0- -5 1 . 0 2 a 5 3 . 10 4 . 15 4 . 1 b 0 3 . 07 3 . 05 4 . 0 c 9 0 . 0- -0 2 . 0 d c i s a b 0 0 . 9 1 d c i s a b 0 0 . 7 2 d . f e r 0 6 . 5 e c i s a b 0 0 . 9 1 e c i s a b 0 0 . 7 2 e . f e r 0 6 . 5 e c i s a b 0 8 . 0 l 5 4 . 00 6 . 05 7 . 0 0 - - 7 c c c - -- -0 1 . 0 reference document: jedec publication 95, ms-026
83947AYI-147 www.idt.com rev. a august 12, 2010 10 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer t able 8. o rdering i nformation while the information presented herein has been checked for both accuracy and reliability, integrated device technology, inc. ( idt) assumes no responsibility for either its use or for infringement of any patents or other rights of third parties, which would result from its use. no other circuits, patents, or licenses are i mplied. this product is intended for use in normal commercial and industrial applications. any other applications such as those requiring high reliability, or other extraordinary environmental requirement s are not recommended without additional processing by idt. idt reserves the right to change any circuitry or specifications without notice. idt does not authorize or warrant any idt product for use i n life support devices or critical medical instruments. r e b m u n r e d r o / t r a pg n i k r a me g a k c a pg n i g a k c a p g n i p p i h se r u t a r e p m e t 7 4 1 - i y a 7 4 9 3 87 4 1 i a 7 4 9 3 8 s c ip f q l d a e l 2 3y a r tc 5 8 o t c 0 4 - t 7 4 1 - i y a 7 4 9 3 87 4 1 i a 7 4 9 3 8 s c il e e r d n a e p a t n o p f q l d a e l 2 30 0 0 1c 5 8 o t c 0 4 -
83947AYI-147 www.idt.com rev. a august 12, 2010 11 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer t e e h s y r o t s i h n o i s i v e r v e re l b a te g a pe g n a h c f o n o i t p i r c s e de t a d a8 t0 1 2 1 . s c i m o r f t d i h t i w r e t o o f / r e d a e h s ' t e e h s a t a d d e t a d p u . n m u l o c r e b m u n r e d r o / t r a p m o r f x i f e r p s c i d e v o m e r . e g a p t c a t n o c d e d d a 0 1 / 2 1 / 8
83947AYI-147 www.idt.com rev. a august 12, 2010 12 ics83947i-147 l ow s kew , 1- to -9 lvcmos/lvttl f anout b uffer we?ve got your timing solution. sales 800-345-7015 (inside usa) +408-284-8200 (outside usa) fax: 408-284-2775 tech support netcom@idt.com 6024 silver creek valley road san jose, ca 95138 ? 2010 integrated device technology, inc. all rights reserved. product specifications subject to change without notice. idt, th e idt logo, ics and hiperclocks are trademarks of integrated device technology, inc. accelerated thinking is a service mark of integrated device technology, inc. all other brands, product names and marks are or m ay be trademarks or registered trademarks used to identify products or services of their respective owners. printed in usa

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