SSM3K310T 2007-01-10 1 toshiba field effect transistor silicon n-channel mos type SSM3K310T high-speed switching applications ? 1.5 v drive ? low on-resistance: r on = 66 m ? (max) (@v gs = 1.5 v) r on = 43 m ? (max) (@v gs = 1.8 v) r on = 32 m ? (max) (@v gs = 2.5 v) r on = 28 m ? (max) (@v gs = 4.0 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v dc i d 5.0 drain current pulse i dp 10.0 a drain power dissipation p d (note 1) 700 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note 1: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit v (br) dss i d = 1 ma, v gs = 0 20 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = ? 10 v 12 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.35 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 4.0 a (note 2) 14 28 ? s i d = 4.0 a, v gs = 4.0 v (note 2) ? 19 28 i d = 3.0 a, v gs = 2.5 v (note 2) ? 23 32 i d = 1.0 a, v gs = 1.8 v (note 2) ? 28 43 drain-source on-resistance r ds (on) i d = 0.5 a, v gs = 1.5 v (note 2) ? 33 66 m ? input capacitance c iss ? 1120 ? output capacitance c oss ? 180 ? reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 160 ? pf total gate charge q g ? 14.8 ? gate-source charge q gs ? 11.4 ? gate-drain charge q gd v ds = 10 v, i ds = 5.0 a v gs = 4 v ? 3.4 ? nc turn-on time t on ? 21 ? switching time turn-off time t off v dd = 10 v, i d = 2.0 a, v gs = 0~2.5 v, r g = 4.7 ? ? 36 ? ns drain-source forward voltage v dsf i d = ? 5.0 a, v gs = 0 v (note 2) ? -0.85 -1.2 v note 2: pulse test unit: mm 1.gate 2.source 3.dra in 2.90.2 0.95 0.95 0.15 00.1 1.6-0.1 +0.2 2.8-0.3 +0.2 1.90.2 0.40.1 0.160.05 0.70.05 tsm jedec D jeita D toshiba 2-3s1a weight: 10 mg (typ.) unit: mm
SSM3K310T 2007-01-10 2 switching time test circuit (a) test circuit (b) v in marking equivalent circuit (top view) notice on usage v th can be expressed as the voltage between gate and source when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th, and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out v dd = 10 v r g = 4.7 ? d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 2.5 v 0 10 s r g t f t on 90% 10% 2.5 v 0 v 10% 90% t off t r v dd v ds ( on ) 1 2 3 kd q 12 3
SSM3K310T 2007-01-10 3 ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) 0.8 0 ? 50 0 150 0.2 0.4 0.6 1.0 50 100 common source v ds = 3 v i d = 1 ma drain ? source on-resistance r ds (on) (m ? ) 0 2 6 8 gate - source voltage v gs (v) 4 0 50 100 r ds (on) ? v gs 10 ? 25 c 25 c ta = 100 c i d = 4.0a common source drain - source voltage v ds (v) i d ? v ds drain current i d (a) 0 8 0 0.4 0.6 1.0 6 2 4 0.8 10 1.5 v 2.5 v 1.8 v 4.0 v common source ta = 25 c v gs = 1.2 v 0.2 gate - source voltage v gs (v) i d ? v gs drain current i d (a) 10 0 0.1 1 0.001 0.01 0.0001 1.5 0.5 1.0 common source v ds = 3 v ta = 100 c ? 25 c 25 c drain current i d (a) r ds (on) ? i d drain ? source on-resistance r ds (on) (m ? ) 0 2 6 8 4 0 50 100 10 v gs = 4.0 2.5 v 1.8 v common source ta = 25c 1.5 v ambient temperature ta (c) r ds (on) ? ta 0 ? 50 0 50 150 100 100 3.0 a / 2.5 v 50 1.0 a / 1.8 v common source i d = 4. 0 a / v gs = 4.0 v drain ? source on-resistance r ds (on) (m ? ) 0.5 a / 1.5 v
SSM3K310T 2007-01-10 4 drain current i d (a) forward transfer admittance ? ? = 3 v ta = 25 c 0.01 10 0.001 0.1 1 10 0.01 0.1 1 30 3 0.3 0.03 drain ? source voltage v ds (v) c ? v ds capacitance c (pf) 10 0.1 1 10 100 100 1000 5000 3000 300 30 common source ta = 25 c f = 1 mhz v gs = 0 v c iss c oss c rss switching time t (ns) drain current i d (a) t ? i d 1 0.01 100 0.1 1000 1 10 common source v dd = 10 v v gs = 0 2.5 v ta = 25 c r g = 4.7 ? t off t f 10 t on t r drain reverse current i dr (a) drain-source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 0.0001 -0.2 -0.6 -0.4 -1.0 -0.8 -1.2 ? 25 c ta=100 c common source v gs = 0 v g d s i dr 25 c total gate charge qg (nc) dynamic input characteristic gate-source voltage v gs (v) 0 0 20 40 4 8 50 10 6 2 30 10 common source i d = 5.0 a ta = 25c vdd = 10v vdd = 16v
SSM3K310T 2007-01-10 5 transient thermal impedance rth (c/w) pulse width t w (s) r th ? t w 1 100 1000 10 0.001 0.01 0.1 1000 1 10 100 single pulse a: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 0.8 mm 2 3) b a ambient temperature t a (c) p d ? t a drain power dissipation p d (mw) 800 0 200 120 100 140 400 600 160 1000 80 60 40 20 0 -20 -40 a b a: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 0.8 mm 2 3)
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