rej03g864-0400 rev.4.00 sep 07, 2007 page 1 of 6 2sj451 silicon p channel mos fet rej03g0864-0400 rev.4.00 sep 07, 2007 description low frequency power switching features ? low on-resistance. ? low drive power ? 2.5 v gate drive device. ? small package (mpak). outline renesas package code: plsp0003zb-a (package name: mpak) 1. source 2. gate 3. drain d s g 1 2 3 note: marking is ?zk??. absolute maximum ratings (ta = 25 c) item symbol value unit drain to source voltage v dss ?20 v gate to source voltage v gss 20 v drain current i d ?0.2 a drain peak current i d (pulse) note 1 ?0.4 a channel dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c note: 1. pw 10 s, duty cycle 1%
2sj451 rej03g864-0400 rev.4.00 sep 07, 2007 page 2 of 6 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br) dss ?20 ? ? v i d = ?100 a, v gs = 0 gate to source breakdown voltage v (br) gss 20 ? ? v i g = 100 a, v ds = 0 zero gate voltage drain current i dss ? ? ?1.0 a v ds = ?16 v, v gs = 0 gate to source leak current i gss ? ? 2.0 a v gs = 16 v, v ds = 0 gate to source cutoff voltage v gs (off) ?0.5 ? ?1.5 v i d = ?10 a, v ds = ?5 v r ds (on) 1 ? 2.3 3.5 ? i d = ?100 ma, v gs = ?4 v note 2 static drain to source on state resistance r ds (on) 2 ? 5.0 9.0 ? i d = ?40 ma, v gs = ?2.5 v note 2 forward transfer admittance |y fs | 0.13 0.23 ? s i d = ?100 ma, v ds = ?10 v note 2 input capacitance ciss ? 2.4 ? pf output capacitance coss ? 31 ? pf reverse transfer capacitance crss ? 0.6 ? pf v ds = ?10 v v gs = 0 f = 1 mhz turn-on delay time t d (on) ? 170 ? ns rise time t r ? 680 ? ns turn-off delay time t d (off) ? 3.0 ? s fall time t f ? 2.8 ? s i d = ?0.1 a v gs = ?10 v r l = 100 ? note: 2. pulse test
2sj451 rej03g864-0400 rev.4.00 sep 07, 2007 page 3 of 6 main characteristics channel dissipation pch (mw) ambient temperature ta (c) maximum channel dissipation curve drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics ?0.20 0 ?0.04 ?0.08 ?0.12 ?0.16 0?2?4?6?8 ?10 ?0.20 0 ?0.04 ?0.08 ?0.12 ?0.16 0?1 ?2 ?3 ?4 ?5 tc = 75c 25c ?25c 200 0 50 100 150 0 50 100 150 200 v ds = ?10 v pulse test ?10 v ?4 v ?2.5 v v gs = ?2 v pulse test drain to source voltage v ds (v) drain current i d (a) maximum safe operation area ?0.3 ?0.1 ?0.03 ?0.003 ?0.01 ?0.001 ?0.1 ?0.3 ?1 ?3 ?10 ?30 ?100 ?1 ta = 25c pw = 10 ms dc operation 1 ms operation in this area is limited by r ds (on) gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage ?1.0 0 ?0.2 ?0.4 ?0.6 ?0.8 0 ?2 ?4 ?6 ?8 ?10 pulse test i d = ?0.2 a ?0.05 a ?0.1 a drain current i d (a) drain to source on state resistance r ds (on) ( ?) static drain to source on state resistance vs. drain current 20 10 2 5 1 ?0.05 ?0.2 ?0.5 ?0.01 ?0.1 ?1 ?0.02 100 50 v gs = ?2.5 v ?4 v pulse test
2sj451 rej03g864-0400 rev.4.00 sep 07, 2007 page 4 of 6 10 ?40 0 40 80 120 160 case temperature tc (c) 0 2 4 6 8 static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. temperature pulse test ?4 v v gs = ?2.5 v i d = ?0.05 a ?0.05 a, ?0.1 a ?0.2 a ?0.1 a forward transfer admittance |y fs | (s) forward transfer admittance vs. drain current drain current i d (a) 2 0.5 0.2 0.1 1 0.02 0.05 0.01 0.002 0.005 ?0.01 ?0.03 ?0.1 ?0.3 ?1 ?3 ?10 tc = ?25c 75c v ds = ?10 v pulse test 25c 0 ?10 ?20 ?30 ?40 ?50 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 100 30 10 3 1 0.3 0.1 ciss coss crss v gs = 0 f = 1 mhz 10 5 2 0.5 1 0.2 0.1 ?0.1 ?0.02 ?0.05 ?0.2 ?0.5 ?1 ?0.01 t f t r t d(off) t d(on) switching time t (s) drain current i d (a) switching characteristics ?0.5 0 ?0.1 ?0.2 ?0.3 ?0.4 0 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 pulse test ? 5 v v gs = 0 v gs = ?10 v, v dd = ?10 v pw = 50 s, duty 1 %
2sj451 rej03g864-0400 rev.4.00 sep 07, 2007 page 5 of 6 t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit waveform vin monitor d.u.t. vin ?10 v r l vout monitor 50 ? v dd = ?10 v
2sj451 rej03g864-0400 rev.4.00 sep 07, 2007 page 6 of 6 package dimensions d e a aa b xsa m eh e a a 2 a 1 s b a-a section c qc l l 1 l p a 3 pattern of terminal position areas i 1 b 2 e e 1 a a 1 a 2 a 3 b c d e e h e l l 1 l p x b 2 e 1 i 1 q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 min nom dimension in millimeters reference symbol max 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.95 0.3 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 sc-59a plsp0003zb-a mpak(t) / mpak(t)v 0.011g mass[typ.] renesas code jeita package code previous code package name mpak ordering information part name quantity shipping container 2sj451zk-tl-e 3000 pcs taping 2SJ451ZK-TR-E 3000 pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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