rev.2.00 sep 07, 2005 page 1 of 6 2sk2570 silicon n channel mos fet low frequency power switching rej03g1019-0200 (previous: ade-208-574) rev.2.00 sep 07, 2005 features ? low on-resistance r ds(on) = 0.8 ? typ. (v gs = 4 v, i d = 100 ma) ? 2.5 v gate drive devices. ? small package (mpak) outline renesas package code: plsp0003zb-a (package name: mpak) 1. source 2. gate 3. drain s d g 2 1 3 note: marking is ?zl??
2sk2570 rev.2.00 sep 07, 2005 page 2 of 6 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 20 v gate to source voltage v gss 10 v drain current i d 0.2 a drain peak current i d(pulse) * 1 0.4 a channel dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c note: 1. pw 10 s, duty cycle 1 % electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 20 ? ? v i d = 10 a, v gs = 0 gate to source breakdown voltage v (br)gss 10 ? ? v i g = 100 a, v ds = 0 zero gate voltage drain current i dss ? ? 1.0 a v ds = 20 v, v gs = 0 gate to source leak current i gss ? ? 5.0 a v gs = 6.5 v, v ds = 0 gate to source cutoff voltage v gs(off) 0.5 ? 1.5 v i d = 10 a, v ds = 5 v ? 0.8 1.1 ? i d = 100 ma, v gs = 4 v * 2 static drain to source on state resistance r ds(on) ? 1.3 2.2 ? i d = 40 ma, v gs = 2.5 v * 2 forward transfer admittance |y fs | 0.22 0.35 ? s i d = 100 ma, v ds = 10 v * 2 input capacitance ciss ? 45 ? pf output capacitance coss ? 33 ? pf reverse transfer capacitance crss ? 9.6 ? pf v ds = 10 v, v gs = 0, f = 1 mhz turn-on delay time t d(on) ? 20 ? ns rise time t r ? 60 ? ns turn-off delay time t d(off) ? 240 ? ns fall time t f ? 140 ? ns v gs = 5 v, i d = 100 ma, r l = 100 ? notes: 2. pulse test
2sk2570 rev.2.00 sep 07, 2005 page 3 of 6 main characteristics drain to source voltage v ds (v) drain current i d (a) maximum safe operation area typical output characteristics drain current i d (a) drain current i d (a) typical transfer characteristics gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage drain current i d (a) static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. drain current ambient temperature ta ( c) channel dissipation pch (mw) maximum channel dissipation curve 11050 0.20 0.16 0.12 0.08 0.04 0 2 46810 0.20 0.16 0.12 0.08 0.04 0 0.5 1.0 1.5 2.0 2.5 200 150 100 50 0 50 100 150 200 5 2 1 0.2 0.1 0.5 0.02 0.01 0.05 0.05 0.2 0.5 2 5 20 100 pw = 10 ms (1 shot) 1 ms dc ope ration ta = 25 c 1 shot v gs = 1.6 v 10 v 5 v 2.5 v 2 v 1.8 v tc = ?25 c 75 c 25 c pulse test v ds = 10 v pulse test operation in this area is limited by r ds(on) 0.5 0.4 0.3 0.2 0.1 0 24 6 810 5 2 1 0.2 0.5 0.1 i d = 0.2 a 0.1 a 0.05 a 0.01 0.02 0.05 0.1 0.2 0.5 v gs = 2.5 v 4 v pulse test pulse test
2sk2570 rev.2.00 sep 07, 2005 page 4 of 6 case temperature t c ( c) static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance ? y fs ? (s) forward transfer admittance vs. drain current capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage drain current i d (a) switching time t ( s) switching characteristics source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage 2.5 2.0 1.5 1.0 0.5 e40 0 40 80 120 160 0 0.5 0.2 0.1 0.02 0.05 0.01 0.005 i d = 0.2 a v gs = 2.5 v 4 v 0.05, 0.1, 0.2 a 0.05, 0.1a 1 25 c tc = ?25 c 75 c pulse test v ds = 10 v pulse test 0.002 0.005 0.01 0.02 0.05 0.1 0.2 04 8121620 200 500 100 10 20 50 500 200 50 100 10 20 5 0.05 0.20 0.16 0.12 0.08 0.04 0 0.4 0.8 1.2 1.6 2.0 1 2 5 0.5 0.2 0.1 ciss coss crss v gs = 0 f = 1 mhz v gs = 5 v, v dd = 10 v pw = 5 s, duty < 1 % t f t r t d(on) t d(off) v gs = 0 5 v pulse test
2sk2570 rev.2.00 sep 07, 2005 page 5 of 6 vin monitor d.u.t. vin 5 v r l v dd = 10 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 50 ? 90% 10% t f switching time test circuit waveform
2sk2570 rev.2.00 sep 07, 2005 page 6 of 6 package dimensions d e a aa b xsa m eh e a a 2 a 1 s b a-a section b 1 c 1 c qc l l 1 l p a 3 pattern of terminal position areas i 1 b 2 e e 1 a a 1 a 2 a 3 b b 1 c c 1 d e e h e l l 1 l p x b 2 e 1 i 1 q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 min nom dimension in millimeters reference symbol max 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 1.95 0.3 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 sc-59a 0.011g mass[typ.] mpak(t) / mpak(t)v, mpak / mpakv plsp0003zb-a renesas code jeita package code package name ordering information part name quantity shipping container 2sk2570zl-tl-e 3000 pcs taping 2SK2570ZL-TR-E 3000 pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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