the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sk3325b switching n-channel power mosfet document no. d18429ej2v0ds00 (2nd edition) date published april 2007 ns cp (k) printed in japan data sheet 2006 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. description the 2sk3325b is n-channel mosfet device that features a lo w gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, ac adapter. features ? low gate charge q g = 20 nc typ. (i d = 10 a, v dd = 400 v, v gs = 10 v) ? gate voltage rating : 30 v ? low on-state resistance r ds(on) = 0.85 max. (v gs = 10 v, i d = 5.0 a) ? avalanche capability ratings absolute maximum ratings (t a = 25 c ) drain to source voltage (v gs = 0 v) v dss 500 v gate to source voltage (v ds = 0 v) v gss 30 v drain current (dc) (t c = 25 c) i d(dc) 10 a drain current (pulse) note1 i d(pulse) 40 a total power dissipation (t a = 25 c) p t1 1.5 w total power dissipation (t c = 25 c) p t2 85 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c single avalanche current note2 i as 10 a single avalanche energy note2 e as 10.7 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25 c, v dd = 150 v, r g = 25 , v gs = 20 0 v ordering information part number lead plating packing package 2sk3325b-s19-ay note pure sn (tin) tube 50 p/tube to-220ab (mp-25) typ. 1.9 g 2sk3325b-zk-e1-ay note pure sn (tin) tape 800 p/reel to-263 (mp-25zk) typ. 1.48 g 2SK3325B-ZK-E2-AY note pure sn (tin) tape 800 p/reel to-263 (mp-25zk) typ. 1.48 g note pb-free (this product dose not contain pb in external electrode.) (to-263) (to-220ab)
data sheet d18429ej2v0ds 2 2sk3325b electrical characteristics (t a = 25c) chracteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 500 v, v gs = 0 v 100 a gate leakage current i gss v gs = 30 v, v ds = 0 v 100 na gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 2.5 3.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 5.0 a 2.0 3.9 s drain to source on-state resistance note r ds(on) v gs = 10 v, i d = 5.0 a 0.76 0.85 input capacitance c iss v ds = 10 v 1270 pf output capacitance c oss v gs = 0 v 210 pf reverse transfer capacitance c rss f = 1 mhz 6 pf turn-on delay time t d(on) v dd = 150 v, i d = 5.0 a 19 ns rise time t r v gs = 10 v 6.5 ns turn-off delay time t d(off) r g = 10 31 ns fall time t f r l = 60 5 ns total gate charge q g v dd = 400 v 20 nc gate to source charge q gs v gs = 10 v 9.5 nc gate to drain charge q gd i d = 10 a 5.5 nc body diode forward voltage note v f(s-d) i f = 10 a, v gs = 0 v 0.98 1.5 v reverse recovery time t rr i f = 10 a, v gs = 0 v 440 ns reverse recovery charge q rr di/dt = 50 a/ s 2000 nc note pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d18429ej2v0ds 3 2sk3325b typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t ch - channel temperature - c p t - total power dissipation - w 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.01 0.1 1 10 100 1 10 100 1000 i d(dc) r ds(on) limited (v gs = 10 v) t c = 25 c single pulse i d(pulse) 1 m s 1 0 m s p w = 1 0 0 s p o w e r d i s s i p a t i o n l i m i t e d v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(ch-a) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 83.3 c/w r th(ch-c) = 1.47 c/w single pulse pw - pulse width ? s 100 1 m 10 m 100 m 1 10 100 1000
data sheet d18429ej2v0ds 4 2sk3325b drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 v gs = 20 v pulsed 10 v v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 02468101214 v ds = 10 v pulsed t a = ? 55 c ? 25 c 25 c 75 c 125 c 150 c v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v 0 1 2 3 4 5 -50 0 50 100 150 v ds = 10 v i d = 1 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.01 0.1 1 10 0.01 0.1 1 10 100 v ds = 10 v pulsed t a = ? 55 c ? 25 c 25 c 75 c 125 c 150 c i d - drain current - a drain to source on-state resistance vs. gate to source voltage drain to source on-state resistance vs. drain current r ds(on) - drain to source on-state resistance - 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 pulsed i d = 10 a 5.0 a 2.0 a v gs ? gate to source voltage - v r ds(on) - drain to source on-state resistance - 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.1 1 10 100 20 v v gs = 10 v pulsed i d - drain current - a
data sheet d18429ej2v0ds 5 2sk3325b drain to source on-state resistance vs. channel temperature source to drain diode forward voltage r ds(on) - drain to source on-state resistance - 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 0 50 100 150 i d = 10 a 5.0 a v gs = 10 v pulsed t ch - channel temperature - c i f ? diode forward current - a 0.01 0.1 1 10 100 00.511.5 pulsed 0 v v gs = 10 v v f(s-d) ? source to drain voltage - v capacitance vs. drain to source voltage switching characteristics c iss , c oss , c rss - capacitance - pf 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 v gs = 0 v f = 1 mhz c rss c iss c oss v ds - drain to source voltage ? v t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 v dd = 150 v v gs = 10 v r g = 10 t d(off) t f t r t d(on) i d - drain current - a revwese recovery time vs. drain current dynamic input/output characteristics t rr ? reverse recovery time - ns 10 100 1000 0.1 1 10 100 di/dt = 50 a/ s v gs = 0 v i d - drain current - a v ds ? drain to source voltage - v 0 100 200 300 400 500 0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 9 10 v ds v gs 250 v v dd = 400 v 100 v i d = 10 a q g ? gate chage - nc v gs ? gate to source voltage - v
data sheet d18429ej2v0ds 6 2sk3325b single avalanche current vs. inductive load single avalanche energy derating factor i as - single avalanche current - a 0.1 1 10 100 0.01 0.1 1 10 v dd = 150 v v gs = 20 0 v r g = 25 starting t ch = 25 c i as = 10 a e as = 10.7 mj l - inductive load - h energy derating factor - % 0 20 40 60 80 100 120 25 50 75 100 125 150 v dd = 150 v r g = 25 v gs = 20 0 v i as 10 a starting t ch - starting channel temperature - c
data sheet d18429ej2v0ds 7 2sk3325b package drawings (unit: mm) 1) to-220ab (mp-25) 2) to-263 (mp-25zk) 4.8 max. 1 2 3 10.2 max. 8.7 typ. 3.60.2 4 2.80.3 1.520.2 0.80.1 2.54 typ. 2.54 typ. 6.3 min. 3.0 typ. 15.9 max. 12.7 min. 1.30.2 0.50.2 2.40.2 1.gate 2.drain 3.source 4.fin (drain) 10.00.3 8.0 typ. 2.54 0.750.2 9.150.3 2.540.25 15.250.5 1.350.3 123 4 2.5 4.450.2 1.30.2 0.50.2 0 to 8 o 1.gate 2.drain 3.source 4.fin (drain) no plating 7.88 min. 0.025 to 0.25 0.25 remark strong electric field, when exposed to this device , can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as mu ch as possible, and quickly dissipate it once, when it has occurred. equivalent circuit body diode source (s) drain (d) gate (g)
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