1 www.semtech.com protection products slvu2.8q low voltage tvs diode for automotive applications description features circuit diagram schematic and pin configuration revision 3/23/2011 applications mechanical characteristics ? jedec sot-23 3l package ? pb-free, halogen free, rohs/weee compliant ? molding compound flammability rating: ul 94v-0 ? marking: marking code ? packaging: tape and reel sot-23 3l (top view) ? analog video ? navigation systems ? touch panels the slvu2.8q transient voltage suppressor is rated to grade 3 of aec-q100 for use in automotive applica- tions. it is specifically designed to protect sensitive components which are connected to data and trans- mission lines from overvoltage events. it may be used to protect one single ended line operating up to 2.8 volts. the slvu2.8q is constructed using semtech?s propri- etary epd process technology. the epd process provides a true low operating voltage of 2.8 volts for maximum circuit protection. the slvu2.8q features high esd capability (+/-25kv contact, +/-30kv air per iec 61000-4-2), low clamping voltage, and is rated to absorb up to 24a for an 8/20us duration pulse. since the slvu2.8q is constructed using solid-state silicon- avalanche technology, it will not degrade as long as it is operated within data sheet parameters. the slvu2.8q is in a 3-lead sot23 package. the leads are finished with matte tin. this device is a pb- free, halogen free, rohs/weee compliant product. ? 400 watts peak pulse power (t p = 8/20 s) ? transient protection for high speed data lines to iec 61000-4-2 (esd) 30kv (air), 25kv (contact) iec 61000-4-4 (eft) 40a (5/50ns) iec 61000-4-5 (lightning) 24a (8/20 s) ? one device protects one unidirectional line ? qualified to aec-q100, grade 3 ? low leakage current ? low operating and clamping voltages ? solid-state silicon-avalanche technology 3 1 2 3 1 2
2 ? 2011 semtech corp. www.semtech.com protection products slvu2.8q absolute maximum rating electrical characteristics (t=25 o c unless otherwise specified) g n i t a rl o b m y se u l a vs t i n u 0 2 / 8 = p t ( r e w o p e s l u p k a e p 5 2 = t , s o ) cp k p 0 0 4s t t a w 0 2 / 8 = p t ( t n e r r u c e s l u p k a e p 5 2 = t , s o ) ci p p 4 2a ) r i a ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e ) t c a t n o c ( 2 - 4 - 0 0 0 1 6 c e i r e p d s e v d s e 0 3 - / + 5 2 - / + v k e r u t a r e p m e t g n i t a r e p ot j 5 8 + o t 0 4 - o c e r u t a r e p m e t e g a r o t st g t s 5 2 1 + o t 5 5 - o c r e t e m a r a pl o b m y ss n o i t i d n o cm u m i n i ml a c i p y tm u m i x a ms t i n u e g a t l o v f f o - d n a t s e s r e v e rv m w r 1 o t 2 n i p r o 1 o t 3 n i p c o 5 8 + o t 0 4 - = t 8 . 2v e g a t l o v h g u o r h t - h c n u pv t p i t p c 5 2 = t , a 2 = 1 o t 3 n i p 2 . 3v e g a t l o v h g u o r h t - h c n u pv t p i t p c 5 8 = t , a 2 = 1 o t 3 n i p 8 . 2v e g a t l o v k c a b - p a n sv b s i b s 1 o t 3 n i p , a m 0 5 =8 . 2v t n e r r u c e g a k a e l e s r e v e ri r v m w r c 5 2 = t , v 8 . 2 = 1 o t 2 n i p r o 1 o t 3 n i p 0 5 2 . 0a t n e r r u c e g a k a e l e s r e v e ri r v m w r c 5 8 = t , v 8 . 2 = 1 o t 2 n i p r o 1 o t 3 n i p 0 0 3 . 0a t n e r r u c e g a k a e l e s r e v e ri d r v m w r c 5 2 = t , v 8 . 2 = 2 o t 3 n i p 1a t n e r r u c e g a k a e l e s r e v e ri d r v m w r c 5 8 = t , v 8 . 2 = 2 o t 3 n i p 3a e g a t l o v n w o d k a e r b e s r e v e rv r b i t 2 o t 3 n i p , a 0 1 =0 0 1v
3 ? 2011 semtech corp. www.semtech.com protection products slvu2.8q r e t e m a r a pl o b m y ss n o i t i d n o cm u m i n i ml a c i p y tm u m i x a ms t i n u e g a t l o v g n i p m a l cv c i p p t , a 2 = p s 0 2 / 8 = 1 o t 3 n i p 9 . 3v e g a t l o v g n i p m a l cv c i p p t , a 5 = p s 0 2 / 8 = 1 o t 3 n i p 7v e g a t l o v g n i p m a l cv c i p p t , a 4 2 = p s 0 2 / 8 = 1 o t 3 n i p 5 . 2 1v e g a t l o v g n i p m a l cv c i p p t , a 5 = p s 0 2 / 8 = 1 o t 2 n i p 5 . 8v e g a t l o v g n i p m a l cv c i p p t , a 4 2 = p s 0 2 / 8 = 1 o t 2 n i p 5 1v e c n a t i c a p a c n o i t c n u jc j 2 d n a 1 o t 3 n i p d e i t 2 d n a 1 n i p ( ) r e h t e g o t v r z h m 1 = f , v 0 = 0 40 0 1f p e c n a t i c a p a c n o i t c n u jc j ) . c . n 3 n i p ( 1 o t 2 n i p v r z h m 1 = f , v 0 = 5 . 15f p electrical characteristics (t=25 o c unless otherwise specified) - con?t
4 ? 2011 semtech corp. www.semtech.com protection products slvu2.8q typical characteristics non-repetitive peak pulse power vs. pulse time power derating curve 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 ambient temperature - t a ( o c) % of rated power or i pp clamping voltage vs. peak pulse current (pin 3 to pin 1,2) pulse waveform normalized capacitance vs. reverse voltage (t = 25 o c) 0.01 0.1 1 10 0.1 1 10 100 1000 pulse duration - t p (s) peak pulse power - p pk (kw) 0 0.2 0.4 0.6 0.8 1 1.2 00.511.522.53 reverse voltage - vr (v) cj(vr) / cj(vr=0) pin 2 to pin 1 pin 3 to pin 1 and 2 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 time (us) percent of i pp e -t td = i pp /2 waveform parameters: tr = 8s td = 20s forward voltage vs. forward current (pin 2 to pin 3) 0 1 2 3 4 5 6 0 5 10 15 20 25 30 forward current - if (a) forward voltage - vf (v) waveform parameters: tr = 8 s td = 20 s 0 2 4 6 8 10 12 14 16 0 5 10 15 20 peak pulse current ipp - (a) clamping voltage vc - (v) waveform parameters: tr = 8us td = 20us
5 ? 2011 semtech corp. www.semtech.com protection products slvu2.8q typical characteristics esd clamping (pin 1, 2 to 3) (-8kv contact per iec 61000-4-2) esd clamping (pin 3 to 1, 2) (8kv contact per iec 61000-4-2) normalized capacitance vs. temperature (pin 3 to 1, 2) punch-through voltage vs. temperature (pin 3 to 1, 2) reverse leakage current vs. temperature (pin 3 to 1, 2) normalized capacitance vs. temperature (pin 2 to 1) note: esd data is taken with a 10x attenuator 0 0.5 1 1.5 2 2.5 -50-30-101030507090 temperature ( oc ) cj(t) / cj(t=25 o c) 0 0.2 0.4 0.6 0.8 1 1.2 -50-30-101030507090 temperature ( oc ) cj(t) / cj(t=25 o c) 0.0 1.0 2.0 3.0 4.0 5.0 -50 -30 -10 10 30 50 70 90 temperature ( oc ) punch through voltage (vpt) - ( v ) 1 10 100 1000 10000 0 20406080100 temperature ( oc ) reverse leakage (ir) ( na )
6 ? 2011 semtech corp. www.semtech.com protection products slvu2.8q applications information device connection options electronic equipment is susceptible to transient distur- bances from a variety of sources including: esd to an open connector or interface, direct or nearby lightning strikes to cables and wires, and charged cables ?hot plugged? into i/o ports. the slvu2.8q is designed to protect sensitive components from damage and latch- up which may result from such transient events. the slvu2.8q can be configured to protect either one unidirectional line or two (one line pair) high-speed data lines. the options for connecting the devices are as follows: 1 . protection of one unidirectional i/o line: protec- tion of one data line is achieved by connecting pin 3 to the protected line, and pins 1 and 2 to ground. this connection option will allow the device to operate on lines with positive polarity signal transi- tions (during normal operation). in this configura- tion, the device adds a maximum loading capaci- tance of 100pf. during positive duration tran- sients, the internal tvs diode will be reversed biased and will act in the avalanche mode, con- ducting the transient current from pin 3 to 1. the transient will be clamped at or below the rated clamping voltage of the device. for negative duration transients, the internal steering diode is forward biased, conducting the transient current from pin 2 to 3. the transient is clamped below the rated forward voltage drop of the diode. 2. low capacitance protection of one differential line pair: protection of a high-speed differential line pair is achieved by connecting two devices in anti- parallel. pin 1 of the first device is connected to line 1 and pin 2 is connected to line 2. pin 2 of the second device is connected to line 1 and pin 1 is connected to line 2 as shown. pin 3 must be left open on both devices. during negative duration transients, the first device will conduct from pin 2 to 1. the steering diode conducts in the forward direction while the tvs will avalanche and conduct in the reverse direction. during positive transients, the second device will conduct in the same man- ner. in this configuration, the total loading capaci- tance is the sum of the capacitance (between pins 1 and 2) of each device making this configuration suitable for high-speed interfaces. slvu2.8q circuit diagram protection of one unidirectional line 1 2 3 low capacitance protection of one high-speed line pair
7 ? 2011 semtech corp. www.semtech.com protection products slvu2.8q analog video protection circuit video encoder or driver video in/out l2 . l1 slvu2.8q c1 c2 c3 analog video input protection the slvu2.8q can be used in conjunction with a ptc thermistor to protect analog video inputs as shown below. during an overcurrent condition, the ptc will heat up and reduce the current to the load to a low level, protecting downstream components. the reac- tion time of the ptc depends on several factors that are not very well controlled. this means that protected components can potentially be exposed to damaging overcurrent until there is enough power dissipation to trigger the ptc. the slvu2.8q will protect the down stream device until the ptc triggers. the figure at the right shows the typical response of the protection circuit to an overvoltage event. in addition to protect- ing the circuit until the ptc triggers, the slvu2.8q serves to protect components during esd events. the slvu2.8q is capable of withstanding a +/-25kv con- tact discharge per iec 61000-4-2. input voltage output voltage current through slvu2.8q protection circuit response to an overvoltage event
8 ? 2011 semtech corp. www.semtech.com protection products slvu2.8q outline drawing - so-8 land pattern -sot23 3l outline drawing -sot23 3l e e1 d e1 e bxn 12 3 a1 a2 a 3x a bbb c a b b c seating plane aaa c 1.40 1.20 n3 3 0 - 8 0 8 0 - .055 .047 bbb .008 0.20 aaa .004 0.10 inches .114 l1 e d b e c .012 .003 .082 a1 dim a min .000 .035 0.51 0.18 2.64 0.30 0.08 2.10 .022 - .075 - .093 .020 .007 .104 (0.55) 1.90 bsc - - 2.37 2.90 millimeters max 0.10 1.12 min dimensions 0.01 max nom - - .004 .044 nom 0.89 - - 3.04 2.80 .110 .120 e1 .037 0.95 bsc l .015 .020 0.50 0.40 .024 0.60 a2 .035 .037 0.95 0.88 .040 1.02 e1 .051 1.30 see detail a side view datums and to be determined at datum plane -a- -b- 2. controlling dimensions are in millimeters (angles in degrees). notes: or gate burrs. dimensions "e1" and "d" do not include mold flash, protrusions 3. 1. -h- h detail a 0.25 c seating plane gauge plane 0 c l l1 reference ipc-sm-782a. 2. e .037 0.95 y y g z c e x e1 e1 .075 1.90 notes: 1. this land pattern is for reference purposes only consult your manufacturing group to ensure your company's manufacturing guidelines are met. dim y z g x c millimeters inches (2.20) .055 .141 .039 .031 (.087) 1.40 3.60 1.00 0.80 dimensions
9 ? 2011 semtech corp. www.semtech.com protection products slvu2.8q yw = 2 - alphanumeric characters for date code u2.8 yw contact information semtech corporation protection products division 200 flynn road, camarillo, ca 93012 phone: (805)498-2111 fax (805)498-3804 r e b m u n t r a pl e e r r e p y t qe z i s l e e r t c t . q 8 . 2 u v l s0 0 0 , 3h c n i 7 marking codes ordering information tape and reel specification e p a t h t d i w ) x a m ( , bd1 de f k ) x a m ( p0 p2 p) x a m ( tw m m 8 m m 2 . 4 ) 5 6 1 . ( m m 1 . 0 + 5 . 1 m m 0 . 0 - m m 0 . 1 5 0 . 0 0 1 . 0 5 7 . 1 m m 5 0 . 0 5 . 3 m m m m 4 . 2 1 . 0 0 . 4 m m 1 . 0 0 . 4 m m 5 0 . 0 0 . 2 m m m m 4 . 0 m m 0 . 8 m m 3 . 0 + m m 1 . 0 - 0 a0 b0 k m m 5 0 . 0 - / + 3 2 . 3m m 5 0 . 0 - / + 7 1 . 3m m 5 0 . 0 - / + 7 3 . 1 user direction of feed pin 1 location u2.8 u2.8 u2.8
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