2sd1766 / 2sd1758 / 2sd1862 transistors rev.a 1/3 medium power transistor (32v, 2a) 2sd1766 / 2sd1758 / 2sd1862 z features 1) low v ce(sat) . v ce(sat) = 0.5v(typ.) d i c / i b = 2a / 0.2a e 2) complements the 2sb1188 / 2sb1182 / 2sb1240. z structure epitaxial planar type npn silicon transistor z external dimensions (unit : mm) ? 0.1 + 0.2 ? 0.05 + 0.1 ? 0.1 + 0.2 + 0.2 ? 0.1 (3) (2) (1) 4.0 0.3 1.0 0.2 0.5 0.1 2.5 3.0 0.2 1.5 0.1 1.5 0.1 0.4 0.1 0.5 0.1 0.4 0.1 0.4 1.5 4.5 1.6 0.1 0.1 ? 0.1 + 0.2 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 1.0 6.8 0.2 2.5 0.2 1.05 0.45 0.1 2.54 2.54 0.5 0.1 0.9 4.4 0.2 14.5 0.5 (1) (2) (3) 0.65max. (1) emitter (2) collector (3) base rohm : atv (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 2sd1766 2sd1758 2sd1862 abbreviated symbol : db ? ? denotes h fe z z absolute maximum ratings (ta=25 q c) 2sd1766 2sd1758 2sd1862 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 single pulse, pw = 20ms ? 2 when mounted on a 40 40 0.7 mm ceramic board. ? 3 printed circuit board: 1.7 mm thick, collector copper plating 1 cm 2 or lager. parameter symbol limits unit v cbo 40 v v ceo 32 v v ebo 5v i c i cp 2 a (dc) 2.5 a (pulse) ? 1 tj 150 c tstg ? 55 to + 150 c p c 0.5 1 ? 3w 2 ? 2 1 w 10 w (tc = 25 c ) w
2sd1766 / 2sd1758 / 2sd1862 transistors rev.a 2/3 z electrical characteristics (ta=25 q c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob min. 40 32 5 ? ? ? 82 ? ? ? ? ? ? ? ? ? 0.5 100 30 ? ? ? 1 1 0.8 390 390 ? ? vi c = 50 a i c = 1ma i e = 50 a v cb = 20v v eb = 4v i c /i b = 2a/0.2a ? v ce = 5v, i e = ? 500ma, f = 100mhz ? v ce = 3v, i c = 0.5a ? v cb = 10v, i e = 0a, f = 1mhz v v a a v ? mhz pf typ. max. unit conditions 120 2sd1862 2sd1766,2sd1758, collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance ? measured using pulse current. z z packaging specifications and h fe 2sd1766 type t100 1000 h fe tl 2500 ? tv2 2500 ? ? 2sd1758 ? ? 2sd1862 ? pqr pqr qr package taping code basic ordering unit (pieces) h fe values are classified as follows : item h fe r 180 to 390 q 120 to 270 p 82 to 180 z z electrical characteristic curves collector current : i c (ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics 02.0 1000 2000 1 200 500 100 20 50 10 2 5 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6 1.8 ta = 25 c v ce = 3v collector current : i c (a) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.4 0.8 1.2 1.6 2.0 0 ta = 25 c i b = 0a 3.0ma 2.7ma 2.4ma 2.1ma 1.8ma 1.5ma 1.2ma 0.9ma 0.6ma 0.3ma dc current gain : h fe collector current : i c (ma) fig.3 dc current gain vs. collector current 5 500 10 20 50 100 200 500 1a 2a 200 100 50 20 ta = 25 c v ce = 3v 1v
2sd1766 / 2sd1758 / 2sd1862 transistors rev.a 3/3 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.4 collector-emitter saturation voltage vs. collector current 500 20 200 100 50 5 10 20 50 100 200 500 1a 2a ta = 25 c 10 20 i c /i b = 50 base saturation voltage : v be(sat) (v) collector current : i c (ma) fig.5 collector-emitter saturation voltage vs. collector current 5 1 2 0.2 0.5 0.1 10 20 50 100 200 500 1a 2a ta = 25 c i c /i b = 10 emitter current : i e (ma) transition frequency : f t (mhz) fig.6 transition frequency vs. emitter current ? 2 ? 1 200 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1a 500 1000 100 50 20 ta = 25 c v ce = 5v 0.5 200 10 500 1000 100 20 50 12 51020 ta = 25 c f = 1mhz i e = 0a i c = 0a collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.7 collector output capacitance vs. collector-base voltage cib cob collector current : i c (a) collector to emitter voltage : v ce (v) fig.9 safe operating area 5 0.1 50 2 0.2 0.5 1 0.1 0.05 0.2 0.5 1 2 5 10 20 0.01 0.02 (2sd1758) p w = 100ms ? t c = 25 c ? single nonrepetitive pulse collector current : i c (a) collector to emitter voltage : v ce (v) fig.8 safe operating area 0.01 5 0.1 50 2 0.2 0.5 1 0.1 0.02 0.05 0.2 0.5 1 2 5 10 20 (2sd1766) pw = 10ms ? 100ms ? dc t a = 25 c ? single nonrepetitive pulse emitter input capacitance vs. emitter-base voltage ic max dc ic max pulse ta=25 c single nonrepetitive pulse pw=10ms pw=100ms 0.2 0.5 1 2 5 10 20 50 3 2 1 0.1 0.2 0.5 0.05 collector to emitter voltage : v ce (v) collector current : i c (a) fig.10 safe operating area (2sd1862)
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm c o.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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