1/10 rbo40-40g/t ? reversed battery and overvoltage protection september 2005 - ed:6 application specific discretes a.s.d.? d 2 pak rbo40-40g to220-ab RBO40-40T 1 2 3 functional diagram protection against ?load dump? pulse 40a diode to guard against battery reversal monolithic structure for greater reliability breakdown voltage : 24 v min. clamping voltage : 40 v max. compliant with iso / dtr 7637 features designed to protect against battery reversal and load dump overvoltages in automotive applica- tions, this monolithic component offers multiple functions in the same package : d1 : reversed battery protection t1 : clamping against negative overvoltages t2 : transil function against ?load dump? effect. description tm : transil and asd are trademarks of stmicroelectronics.
rbo40-40g / RBO40-40T 2/10 symbol parameter value unit i fsm non repetitive surge peak forward current (diode d1) tp=10ms 120 a i f dc forward current (diode d1) tc=75c 40 a v pp peak load dump voltage (see note 1and 2) 5 pulses (1 minute between each pulse) 80 v p pp peak pulse power between input and output (transil t1) tj initial = 25c 10/1000 s 1500 w t stg /tj storage and operating junction temperature range - 40 to + 150 c t l maximum lead temperature for soldering during 10 s at 4.5mm from case for to220-ab 260 c note 1 : for a surge greater than the maximum value, the device will fail in short-circuit. note 2 : see load dump curves. absolute maximum ratings symbol parameter value unit rth (j-c) junction to case rbo40-40g RBO40-40T 1.0 1.0 c/w rth (j-a) junction to ambient RBO40-40T 60 c/w thermal resistance d1 t1 2 3 1 v cl 31 v rm 31 v f 13 v13 i13 i rm 31 i r 31 ipp31 v br 31 t2 i f i pp 32 v rm 32 v b r 32 v c l 32 3 2 1 v32 i32 i r 32 i rm 32 ex :v f 13 . between pin 1 and pin 3 v br 32 . between pin 3 and pin 2
rbo40-40g / RBO40-40T 3/10 symbol test conditions value unit min. typ. max. v f13 i f =40a 1.9 v v f13 i f = 20a 1.45 v v f13 i f =1a 1v v f13 i f = 100 ma 0.95 v c 13 f = 1mhz v r =0v 3000 pf electrical characteristics : diode d1 (- 40c < t amb < + 85c) symbol parameter v rm31 /v rm32 stand-off voltage transil t1 / transil t2. v br31 /v br32 breakdown voltage transil t1 / transil t2. i r31 /i r32 leakage current transil t1 / transil t2. v cl31 /v cl32 clamping voltage transil t1 / transil t2. v f13 forward voltage drop diode d1. i pp peak pulse current. t temperature coefficient of v br . c 31 /c 32 capacitance transil t1 / transil t2. c 13 capacitance of diode d1 symbol test conditions value unit min. typ. max. v br 31 i r =1ma 22 35 v v br 31 i r = 1 ma, t amb = 25c 24 32 v i rm 31 v rm =20v 100 a i rm 31 v rm =20v,t amb = 25c 10 a v cl 31 i pp = 37.5a, tj initial = 25c 10/1000s 40 v t temperature coefficient of v br 910 -4 /c c 31 f = 1mhz v r =0v 3000 pf electrical characteristics : transil t1 (- 40c < t amb < + 85c) symbol test conditions value unit min. typ. max. v br 32 i r =1ma 22 35 v v br 32 i r = 1 ma, t amb = 25c 24 32 v i rm 32 v rm =20v 100 a i rm 32 v rm =20v,t amb = 25c 10 a v cl 32 i pp = 20 a (note 1) 40 v t temperature coefficient of v br 910 -4 /c c 32 f = 1mhz v r =0v 8000 pf note 1 : one pulse, see pulse definition in load dump test generator circuit. electrical characteristics : transil t2 (- 40c < t amb < + 85c)
rbo40-40g / RBO40-40T 4/10 product description 1 2 3 the rbo has 3 functions integrated on the same chip. d1 : ?diode function? in order to protect against reversed battery operation. t2 : ?transil function? in order to protect against positive surge generated by electric systems (ignition, relay. ...). t1 : protection for motor drive application (see below). basic application * the monolithic multi-function protection (rbo) has been developed to protect sen - sitive semiconductors in car electronic modules against both overvoltage and battery reverse. * in addition, the rbo circuit prevents overvoltages generated by the module from affecting the car supply network. motor driver application d1 t1 t2 battery rbo device motor control motor filter in this application, one half of the motor drive circuit is supplied through the ?rbo? and is thus protected as per its basic function application. the second part is connected directly to the ?car supply network? and is protected as follows : - for positive surges : t2 (clamping phase) and d1 in forward-biased. - for negative surges : t1 (clamping phase) and t2 in forward-biased.
rbo40-40g / RBO40-40T 5/10 - input (1) : pin 1 - output (3) : pin 3 - gnd (2) : connected to base tab marking : logo, date code, rbo40-40g pinout configuration in d 2 pak : d1 t1 t2 tab d1 t1 t2 (tab) - input (1) : pin 1 - output (3) : pin 3 - gnd (2) : connected to base tab marking : logo, date code, RBO40-40T pinout configuration in to220ab :
rbo40-40g / RBO40-40T 6/10 load dump test generator circuit (schaffner nsg 506 c). issued from iso / dtr 7637. u(v) t 0 vbat 90% vs 10% t tr offset 10% / 13.5v open circuit (voltage curve) (pulse test n5) corresponding current wave with d.u.t. ipp ipp/2 0 i tp = 40ms t impulse n5 vs (v) 66.5 vbat (v) 13.5 ri ( ? ) 2 t (ms) 200 (*) tr (ms) <10 number 5 60s between each pulse (*) generator setting 1) with open circuit (generator is in open circuit): - calibrate vs 2) with short circuit (generator is in short circuit): - calibrate ri (ri = 2 ? ) 3) with d.u.t. - calibrate tp (tp = 40ms @ ipp/2) typ. vpp v bat 20ms/div. 10.0v/div. typical voltage curve (open circuit) typ. vcl ipp 20ms/div. 5.0v/div. 20ms/div. 3a/div. typical voltage and current curve with d.u.t. calibration method for schaffner nsg 506 c
rbo40-40g / RBO40-40T 7/10 1 2 5 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10.0 transil t1 transil t2 t p (ms) ppp(kw) fig. 1 : peak pulse power versus exponential pulse duration (tj initial = 85c). v (v) cl 1 2 5 10 20 50 100 200 500 25 30 35 40 45 50 55 t p=1ms tp = 20s i p p ( a) fig. 2-2 : clamping voltage versus peak pulse current (tj initial = 85c). exponential waveform tp = 1 ms and tp = 20 s (transil t1). 0.1 0.2 0.5 1 2 5 10 20 50 100 30.0 32.5 35.0 37.5 40.0 42.5 45.0 tp = 40ms tp = 1ms i pp (a) v (v) cl fig. 2-1 : clamping voltage versus peak pulse current (tj initial = 85c). exponential waveform tp = 40 ms and t p=1ms (transil t2). 0 25 50 75 100 125 150 175 0.00 0.20 0.40 0.60 0.80 1.00 1.20 tj initial (c) ppp[tj]/ppp[tj initial=85c] fig. 3 : relative variation of peak pulse power versus junction temperature.
rbo40-40g / RBO40-40T 8/10 1e-3 1e-2 1e-1 1e+0 1e+1 0.1 0.2 0.5 1.0 zth(j-c)/rth(j-c) tp (s) fig. 4 : relative variation of thermal impedance junction to case versus pulse duration. 0.1 0.2 0.5 12 5 10 20 50 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v fm (v) tj = 25 c tj = 150 c i fm (a) fig. 5-1 : peak forward voltage drop versus peak forward current (typical values) - (transil t2). 0.1 0.2 0.5 2 10 20 50 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v fm (v) 0.1 0.2 0.5 1 5 20 50 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 tj = 25 c tj = 150 c i fm (a) fig. 5-2 : peak forward voltage drop versus peak forward current (typical values) - (diode d1). fig. 6 : relative variation of leakage current versus junction temperature. rbo 40 40 g - reverse battery & overvoltage protection package: g = d pak t = to-220ab 2 i = 40a f(av) v = 40v cl ordering information
rbo40-40g / RBO40-40T 9/10 package mechanical data d 2 pak plastic a c2 d r 2.0 min. flat zone a2 v2 c a1 g l l3 l2 b b2 e ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.30 4.60 0.169 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.40 0.055 c 0.45 0.60 0.017 0.024 c2 1.21 1.36 0.047 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.28 0.393 0.405 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 r 0.40 0.016 v2 0 8 0 8 foot-print (in millimeters) d 2 pak 8.90 3.70 1.30 5.08 16.90 10.30
rbo40-40g / RBO40-40T 10/10 package mechanical data to-220ab plastic m b l4 c b2 a2 l2 c2 l3 b1 a1 a f l i e c1 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not au - thorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2005 stmicroelectronics - all rights reserved. stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com
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