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contents features .............................................................. 1 applications ......................................................... 1 pin assignment ................................................... 1 block diagram ..................................................... 1 selection guide ................................................... 2 output configurations .......................................... 3 advantage over the s-808 series ........................ 3 absolute maximum ratings ................................. 4 electrical characteristics ..................................... 5 test circuits ........................................................ 9 technical terms .................................................. 10 standard circuit ................................................... 11 operation............................................................. 12 characteristics (typical characteristics) ................ 14 application circuit examples ............................... 21 notes ................................................................ 21 dimensions, taping ............................................. 22 discontinued product
seiko instruments inc. 1 built-in delay circuit high-precision voltage detector s-809 series the s-809 series is a high-precision voltage detector developed using cmos process. the detection voltage is fixed internally, with an accuracy of 2.0%. attachment of an external capacitor can delay the release signal. two output types, nch open-drain and cmos output, are available. n features n applications ultra-low current consumption battery checker 1.0 ma typ. (v dd =2.0 v) power failure detector ; products with a detection voltage of 1.4 v or less power monitor for portable equipment such as 1.2 ma typ. (v dd =3.5 v) pagers, electric calculators, electric notes and ; products with a detection voltage of 1.5 v or more remote controllers high-precision detection voltage constant voltage power monitor for cameras, 2.0% video equipment and communication devices low operating voltage power monitor for microcomputers and reset for 0.80 to 6.0 v cpus ; products with detection voltage of 1.4 v or less 0.95 to 10.0 v ; products with detection voltage of 1.5 v or more hysteresis characteristics n pin assignment 5% typ detection voltage 1.1 to 6.0 v (0.1v step) nch open-drain active low and cmos active low output sot-23-5 very-small plastic package figure 1 n block diagram (1) nch open-drain active low output (2) cmos active low output figure 2 1 out 2 v dd 3 v ss 4 nc 5 c d sot-23-5 top view 1 2 3 5 4 2 5 3 1 delay circuit out c d v ref v ss v dd * * *parasitic diode 2 5 3 1 delay circuit out c d v ref v ss v dd * rev. 2.0 discontinued product
built-in delay circuit high-precision voltage detector s-809 series 2 seiko instruments inc. n selection guide s - 80915 an mp - ddc - t2 directions of the ic for taping specifications product name (abbreviation) package name (abbreviation) mp:sot-23-5 output type n:nch open-drain (active low output) l:cmos (active low output) detection voltage rank table 1 detection voltage range (v) hysteresis width v hys typ.(v) nch open drain(low) cmos output(low) 1.1v 2.0% 0.055 s-80911anmp-d71-t2 s-80911almp-d51-t2 1.2v 2.0% 0.060 s-80912anmp-d72-t2 s-80912almp-d52-t2 1.3v 2.0% 0.065 s-80913anmp-dda-t2 s-80913almp-daa-t2 1.4v 2.0% 0.070 s-80914anmp-ddb-t2 s-80914almp-dab-t2 1.5v 2.0% 0.075 s-80915anmp-ddc-t2 s-80915almp-dac-t2 1.6v 2.0% 0.080 s-80916anmp-ddd-t2 s-80916almp-dad-t2 1.7v 2.0% 0.085 s-80917anmp-dde-t2 s-80917almp-dae-t2 1.8v 2.0% 0.090 s-80918anmp-ddf-t2 s-80918almp-daf-t2 1.9v 2.0% 0.095 s-80919anmp-ddg-t2 s-80919almp-dag-t2 2.0v 2.0% 0.100 s-80920anmp-ddh-t2 s-80920almp-dah-t2 2.1v 2.0% 0.105 s-80921anmp-ddj-t2 s-80921almp-daj-t2 2.2v 2.0% 0.110 s-80922anmp-ddk-t2 s-80922almp-dak-t2 2.3v 2.0% 0.115 s-80923anmp-ddl-t2 s-80923almp-dal-t2 2.4v 2.0% 0.120 s-80924anmp-ddm-t2 s-80924almp-dam-t2 2.5v 2.0% 0.125 s-80925anmp-ddn-t2 s-80925almp-dan-t2 2.6v 2.0% 0.130 s-80926anmp-ddp-t2 s-80926almp-dap-t2 2.7v 2.0% 0.135 s-80927anmp-ddq-t2 s-80927almp-daq-t2 2.8v 2.0% 0.140 s-80928anmp-ddr-t2 s-80928almp-dar-t2 2.9v 2.0% 0.145 s-80929anmp-dds-t2 s-80929almp-das-t2 3.0v 2.0% 0.150 s-80930anmp-ddt-t2 s-80930almp-dat-t2 3.1v 2.0% 0.155 s-80931anmp-ddv-t2 s-80931almp-dav-t2 3.2v 2.0% 0.160 s-80932anmp-ddw-t2 S-80932ALMP-DAW-T2 3.3v 2.0% 0.165 s-80933anmp-ddx-t2 s-80933almp-dax-t2 3.4v 2.0% 0.170 s-80934anmp-ddy-t2 s-80934almp-day-t2 3.5v 2.0% 0.175 s-80935anmp-ddz-t2 s-80935almp-daz-t2 3.6v 2.0% 0.180 s-80936anmp-dd0-t2 s-80936almp-da0-t2 3.7v 2.0% 0.185 s-80937anmp-dd1-t2 s-80937almp-da1-t2 3.8v 2.0% 0.190 s-80938anmp-dd2-t2 s-80938almp-da2-t2 3.9v 2.0% 0.195 s-80939anmp-dd3-t2 s-80939almp-da3-t2 4.0v 2.0% 0.200 s-80940anmp-dd4-t2 s-80940almp-da4-t2 4.1v 2.0% 0.205 s-80941anmp-dd5-t2 s-80941almp-da5-t2 4.2v 2.0% 0.210 s-80942anmp-dd6-t2 s-80942almp-da6-t2 4.3v 2.0% 0.215 s-80943anmp-dd7-t2 s-80943almp-da7-t2 4.4v 2.0% 0.220 s-80944anmp-dd8-t2 s-80944almp-da8-t2 4.5v 2.0% 0.225 s-80945anmp-dd9-t2 s-80945almp-da9-t2 4.6v 2.0% 0.230 s-80946anmp-dja-t2 s-80946almp-dea-t2 4.7v 2.0% 0.235 s-80947anmp-djb-t2 s-80947almp-deb-t2 4.8v 2.0% 0.240 s-80948anmp-djc-t2 s-80948almp-dec-t2 4.9v 2.0% 0.245 s-80949anmp-djd-t2 s-80949almp-ded-t2 5.0v 2.0% 0.250 s-80950anmp-dje-t2 s-80950almp-dee-t2 5.1v 2.0% 0.255 s-80951anmp-djf-t2 s-80951almp-def-t2 5.2v 2.0% 0.260 s-80952anmp-djg-t2 s-80952almp-deg-t2 5.3v 2.0% 0.265 s-80953anmp-djh-t2 s-80953almp-deh-t2 5.4v 2.0% 0.270 s-80954anmp-djj-t2 s-80954almp-dej-t2 5.5v 2.0% 0.275 s-80955anmp-djk-t2 s-80955almp-dek-t2 5.6v 2.0% 0.280 s-80956anmp-djl-t2 s-80956almp-del-t2 5.7v 2.0% 0.285 s-80957anmp-djm-t2 s-80957almp-dem-t2 5.8v 2.0% 0.290 s-80958anmp-djn-t2 s-80958almp-den-t2 5.9v 2.0% 0.295 s-80959anmp-djp-t2 s-80959almp-dep-t2 6.0v 2.0% 0.300 s-80960anmp-djq-t2 s-80960almp-deq-t2 discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 3 n output configurations 1. s-809 series model numbering system nch open-drain (?l? reset type) cmos output (?l? reset type) s-809 series ?n? is the last letter of the model number. e.g. s-80915an ?l? is the last letter of the model number. e.g. s-80915al 2. output configurations and their implementation implementation nch(?l?) cmos(?l?) with different power supplies yes no with active low reset cpus yes yes with active high reset cpus no no with voltage divider variable resistors yes no ? example with two power supplies ? examples with one power supply v ss out cpu v dd 2 v dd 1 v/d nch c d v ss out cpu v dd v/d cmos c d v ss out cpu v dd v/d nch c d figure 3 n advantage over the s-808 series 1. built-in delay circuit delay time setting by an additional external capacitor: the s-809 can easily delay an release signal by attachment of an external capacitor with built-in delay circuit. this results in an advantage of parts reduction over the s-808 series. discontinued product
built-in delay circuit high-precision voltage detector s-809 series 4 seiko instruments inc. n absolute maximum ratings 1. products with a detection voltage of 1.4v or less. (unless otherwise specified: ta=25c) parameter symbol ratings unit power supply voltage v dd -v ss 8 v c d terminal input voltage v cd v ss -0.3 to v dd +0.3 v output voltage nch open-drain v out v ss -0.3 to 8 v cmos v ss -0.3 to v dd +0.3 v output current i out 50 ma power dissipation pd 150 mw operating temperature topr -40 to +85 c storage temperature tstg -40 to +125 c 2. products with a detection voltage of 1.5v or more. (unless otherwise specified: ta=25c) parameter symbol ratings unit power supply voltage v dd -v ss 12 v c d terminal input voltage v cd v ss -0.3 to v dd +0.3 v output voltage nch open-drain v out v ss -0.3 to 12 v cmos v ss -0.3 to v dd +0.3 v output current i out 50 ma power dissipation pd 150 mw operating temperature topr -40 to +85 c storage temperature tstg -40 to +125 c note: this ic has a built-in protection circuit for static electricity, however, prevent contact with a large static electricity or high voltage which exceeds the performance of the protection circuit. discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 5 n electrical characteristics 1. detection voltage (1.1v to 1.4v) (unless otherwise specified: ta=25c) parameter symbol conditions min. typ. max. unit test circuit s-80911axmp 1.078 1.100 1.122 detection voltage -v det s-80912axmp 1.176 1.200 1.224 v 1 s-80913axmp 1.274 1.300 1.326 s-80914axmp 1.372 1.400 1.428 hysteresis width v hys -v det 0.03 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd =2.0v ? 1.0 2.5 ma 2 operating voltage v dd 0.8 ? 6.0 v 1 nch v dd =0.95v 0.03 0.25 ? 3 output current i out v ds =0.5v pch(cmos ma output) v dd =4.8v 0.36 0.62 ? 4 v ds =0.5v leakage current of output transistor i leak nch(nch v ds =6.0v open drain) v dd =6.0v ? ? 0.1 ma 3 delay time td v dd =2.0v cd=4.7nf 2.7 3.6 4.5 ms 5 s-80911axmp ? 0.19 0.57 temperature d-v det ta=-40c s-80912axmp ? 0.20 0.60 mv/c 1 characteristic of dta to +85c s-80913axmp ? 0.22 0.66 s-80914axmp ? 0.24 0.72 discontinued product
built-in delay circuit high-precision voltage detector s-809 series 6 seiko instruments inc. 2. detection voltage (1.5v to 2.6v) (unless otherwise specified: ta=25c) parameter symbol conditions min. typ. max. unit test circuit s-80915axmp 1.470 1.500 1.530 s-80916axmp 1.568 1.600 1.632 s-80917axmp 1.666 1.700 1.734 s-80918axmp 1.764 1.800 1.836 s-80919axmp 1.862 1.900 1.938 detection voltage -v det s-80920axmp 1.960 2.000 2.040 v 1 s-80921axmp 2.058 2.100 2.142 s-80922axmp 2.156 2.200 2.244 s-80923axmp 2.254 2.300 2.346 s-80924axmp 2.352 2.400 2.448 s-80925axmp 2.450 2.500 2.550 s-80926axmp 2.548 2.600 2.652 hysteresis width v hys -v det 0.03 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd =3.5v ? 1.2 3.0 ma 2 operating voltage v dd 0.95 ? 10.0 v 1 nch v dd =1.2v 0.23 0.50 ? 3 output current v ds =0.5v i out pch(cmos ma output) v dd =4.8v 0.36 0.62 ? 4 v ds =0.5v leakage current of output transistor i leak nch(nch open drain) v ds =10.0v v dd =10.0v ? ? 0.1 ma 3 delay time td v dd =3.5v s-809xxanmp 20 27 34 ms 5 c d =4.7nf s-809xxalmp 18 24 30 s-80915axmp ? 0.18 0.54 s-80916axmp ? 0.19 0.57 s-80917axmp ? 0.20 0.60 s-80918axmp ? 0.21 0.63 temperature s-80919axmp ? 0.22 0.66 characteristic of d-v det ta=-40c s-80920axmp ? 0.24 0.72 mv/c 1 -v det ta to +85c s-80921axmp ? 0.25 0.75 s-80922axmp ? 0.26 0.78 s-80923axmp ? 0.27 0.81 s-80924axmp ? 0.28 0.84 s-80925axmp ? 0.29 0.87 s-80926axmp ? 0.31 0.93 discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 7 3. detection voltage (2.7v to 3.9v) (unless otherwise specified: ta=25c) parameter symbol conditions min. typ. max. unit test circuit s-80927axmp 2.646 2.700 2.754 s-80928axmp 2.744 2.800 2.856 s-80929axmp 2.842 2.900 2.958 s-80930axmp 2.940 3.000 3.060 s-80931axmp 3.038 3.100 3.162 s-80932axmp 3.136 3.200 3.264 detection voltage -v det s-80933axmp 3.234 3.300 3.366 v 1 s-80934axmp 3.332 3.400 3.468 s-80935axmp 3.430 3.500 3.570 s-80936axmp 3.528 3.600 3.672 s-80937axmp 3.626 3.700 3.774 s-80938axmp 3.724 3.800 3.876 s-80939axmp 3.822 3.900 3.978 hysteresis width v hys -v det 0.03 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd =4.5v ? 1.3 3.3 ma 2 operating voltage v dd 0.95 ? 10.0 v 1 nch v dd =1.2v 0.23 0.50 ? output current v ds =0.5v v dd =2.4v 1.60 3.70 ? 3 i out pch(cmos ma output) v dd =4.8v 0.36 0.62 ? 4 v ds =0.5v leakage current of output transistor i leak nch(nch open drain) v ds =10.0v v dd =10.0v ? ? 0.1 ma 3 delay time td v dd =4.5v s-809xxanmp 20 27 34 ms 5 c d =4.7nf s-809xxalmp 18 24 30 s-80927axmp ? 0.32 0.96 s-80928axmp ? 0.33 0.99 s-80929axmp ? 0.34 1.02 s-80930axmp ? 0.35 1.05 temperature s-80931axmp ? 0.36 1.08 characteristic of d-v det ta=-40c s-80932axmp ? 0.38 1.14 mv/c 1 -v det dta to +85c s-80933axmp ? 0.39 1.17 s-80934axmp ? 0.40 1.20 s-80935axmp ? 0.41 1.23 s-80936axmp ? 0.42 1.26 s-80937axmp ? 0.44 1.32 s-80938axmp ? 0.45 1.35 s-80939axmp ? 0.46 1.38 discontinued product
built-in delay circuit high-precision voltage detector s-809 series 8 seiko instruments inc. 4. detection voltage (4.0v to 5.4v) (unless otherwise specified: ta=25c) parameter symbol conditions min. typ. max. unit test circuit s-80940axmp 3.920 4.000 4.080 s-80941axmp 4.018 4.100 4.182 s-80942axmp 4.116 4.200 4.284 s-80943axmp 4.214 4.300 4.386 s-80944axmp 4.312 4.400 4.488 s-80945axmp 4.410 4.500 4.590 s-80946axmp 4.508 4.600 4.692 detection voltage -v det s-80947axmp 4.606 4.700 4.794 v 1 s-80948axmp 4.704 4.800 4.896 s-80949axmp 4.802 4.900 4.998 s-80950axmp 4.900 5.000 5.100 s-80951axmp 4.998 5.100 5.202 s-80952axmp 5.096 5.200 5.304 s-80953axmp 5.194 5.300 5.406 s-80954axmp 5.292 5.400 5.508 hysteresis width v hys -v det 0.03 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd =6.0v ? 1.5 3.8 ma 2 operating voltage v dd 0.95 ? 10.0 v 1 nch v dd =1.2v 0.23 0.50 ? v ds =0.5v v dd =2.4v 1.60 3.70 ? 3 output current i out pch(cmos ma output) v dd =6.0v 0.46 0.75 ? 4 v ds =0.5v leakage current of output transistor i leak nch(nch open drain) v ds =10.0v v dd =10.0v ? ? 0.1 ma 3 delay time td v dd =6.0v s-809xxanmp 20 27 34 ms 5 c d =4.7nf s-809xxalmp 18 24 30 s-80940axmp ? 0.47 1.41 s-80941axmp ? 0.48 1.44 s-80942axmp ? 0.49 1.47 s-80943axmp ? 0.51 1.53 s-80944axmp ? 0.52 1.56 s-80945axmp ? 0.53 1.59 temperature d-v det ta=-40c s-80946axmp ? 0.54 1.62 mvc 1 characteristic of dta to +85c s-80947axmp ? 0.55 1.65 -v det s-80948axmp ? 0.56 1.68 s-80949axmp ? 0.58 1.74 s-80950axmp ? 0.59 1.77 s-80951axmp ? 0.60 1.80 s-80952axmp ? 0.61 1.83 s-80953axmp ? 0.62 1.86 s-80954axmp ? 0.64 1.92 discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 9 5. detection voltage (5.5v to 6.0v) (unless otherwise specified: ta=25c) parameter symbol conditions min. typ. max. unit test circuit s-80955axmp 5.390 5.500 5.610 s-80956axmp 5.488 5.600 5.712 detection voltage -v det s-80957axmp 5.586 5.700 5.814 v 1 s-80958axmp 5.684 5.800 5.916 s-80959axmp 5.782 5.900 6.018 s-80960axmp 5.880 6.000 6.120 hysteresis width v hys -v det 0.03 -v det 0.05 -v det 0.08 v 1 current consumption i ss v dd =7.5v ? 1.6 4.2 ma 2 operating voltage v dd 0.95 ? 10.0 v 1 nch v dd =1.2v 0.23 0.50 ? 3 v ds =0.5v v dd =2.4v 1.60 3.70 ? output current i out pch(cmos ma output) v dd =8.4v 0.59 0.96 ? 4 v ds =0.5v leakage current of output transistor i leak nch(nch open drain) v ds =10.0v v dd =10.0v ? ? 0.1 ma 3 delay time td v dd =7.5v s-809xxanmp 20 27 34 ms 5 c d =4.7nf s-809xxalmp 18 24 30 s-80955axmp ? 0.65 1.95 s-80956axmp ? 0.66 1.98 temperature d-v det ta=-40c s-80957axmp ? 0.67 2.01 mv/c 1 characteristic of dta to +85c s-80958axmp ? 0.68 2.04 -v det s-80959axmp ? 0.69 2.07 s-80960axmp ? 0.71 2.13 n test circuits (1) (2) (3) r* 100k w v s-809 series out v dd v ss v v dd c d s-809 series out v dd v ss a v dd c d a v s-809 series out v dd v ss v v ds v dd c d * r is unnecessary for cmos output products. (4) (5) a v s-809 series out v dd v ss v v ds v dd c d r* 100k w s-809 series p.g. oscilloscope out vdd vss cd * r is unnecessary for cmos output products. figure 4 discontinued product
built-in delay circuit high-precision voltage detector s-809 series 10 seiko instruments inc. n technical terms 1. detection voltage (-v det ) the detection voltage -v det is the voltage at which the output switches to low. this detection voltage varies slightly among products of the same type. the variation of voltages between the specified minimum [(-v det )min.] and maximum [(- v det )max.] values is called the detection voltage range (see figure 5). example : for the s-80915an, detection voltage lies in the range of 1.470 (-v det ) 1.530. this means that -v det is 1.470 in a product while -v det is 1.530 in another of the same s-80915an. 2. release voltage (+v det ) the release voltage +v det is the voltage at which the output returns (is ?released?) to high. this release voltage varies slightly among products of the same type. the variation of voltages between the specified minimum [(+v det )min.] and maximum [(+v det )max.] values is called the release voltage range (see figure 6). example : for the s-80915an, the release voltage lies in the range of 1.514 (+v det ) 1.652. this means that +v det is 1.514 in a product while +v det is 1.652 in another of the same s-80915an. remark: although the detection voltage and release voltage overlap in the range of 1.514 v to 1.530 v, +v det will always be larger than -v det . 3. hysteresis width (v hys ) the hysteresis width is the voltage difference between the detection voltage and the release voltage (b-a=v hys in figure 11). by giving a device hysteresis, trouble such as noise at the input is avoided. 4. delay time (td) the delay time is a time that the input voltage to v dd terminal exceeds the release voltage (+v det ) and then the output of the out terminal inverts. the delay time can be changed by the additional external capacitor c d . v d out (-v det )max. (-v det )min. voltage range detection detection voltage figure 5 (+v det )max. (+v det )min. release voltage range v dd release voltage out figure 6 (c d =0f) figure 7 td v dd out v + v det discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 11 5. through-type current through-type current refers to the current which flows instantaneously at the time of detection and release of a voltage detector. through-type current is large in cmos output devices, and also flows to some extent in nch open-drain output devices. 6. oscillation in applications where a resistor is connected to the voltage detector input (figure 8), in the cmos active low products for example, the through-type current generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current] [input resistance] across the resistor. when the resultant input voltage drops below the detection voltage -v det , the output voltage returns to its low level. in this state, the through-type current and its resultant voltage drop have disappeared, and the output goes back from low to high. a through-type current is again generated, a voltage drop appears, and the process repeats. this unstable condition is referred to as oscillation. x misimplementation with input voltage divider n standard circuit connect directly the c d capacitor for delay between c d and v ss terminals. rb ra out v in v ss v dd s-809xxal ( cmos output products ) figure 8 v dd out v ss r* 100kw * r is unnecessary for cmos output products. figure 9 c d discontinued product
built-in delay circuit high-precision voltage detector s-809 series 12 seiko instruments inc. n operation 1. basic operation : cmos active low output (1) when power supply voltage v dd is greater than the release voltage +v det , the nch transistor is off and the pch transistor on, causing v dd (high) to appear at the output. with the nch transistor n1 of figure 10 off, the comparator input voltage is (rb+rc)/(ra+rb+rcv dd . (2) when power supply voltage v dd goes below +v det , the output maintains the power supply voltage level, as long as v dd remains above the detection voltage -v det . when v dd does fall below -v det (a in figure 11), the nch transistor goes on, the pch transistor goes off, and v ss appears at the output. with the nch transistor n 1 of figure 10 on, the comparator input voltage is rb/(ra+rb)v dd . (3) when v dd falls below the minimum operating voltage, the output becomes undefined. however, output will revert to v dd if a pull-up has been employed. (4) v ss will again be output when v dd rises above the minimum operating voltage. v ss will continue to be output even when v dd surpasses -v det , as long as it does not exceed the release voltage +v det . (5) when v dd rises above +v det (b in figure 11), the nch transistor goes off, the pch transistor goes on, and v dd appears at the output. then v dd at the out terminal appears with delay time(td) due to delay circuit. 2. delay circuit the delay circuit outputs the signal delayed from the release voltage (+v det ) point of the power voltage v dd rising. the output signal is not delayed when the v dd goes down the detection voltage (-v det ) or less. (see figure 11). the delay time(td) is determined by the time constant of the built-in constant current (approx. 100na in the case of products with detection voltage of 1.5v or more, approx. 570na in the case of products with detection voltage of 1.4v or less) and the attached external capacitor (c d ), and calculated from the following formula. td (ms) = delay factor c d (nf) delay factor: (25c) products with detection voltage of 1.4v or less : min.0.57, typ.0.77, max.0.96 products with detection voltage of 1.5v or more nch open-drain outputs : min.4.3, typ.5.7, max.7.2 cmos outputs : min.3.8, typ.5.1, max.6.4 a b v dd v ss release voltage (+v det ) detection voltage (-v det ) min. operating voltage out terminal output hysteresis width (v hys ) v dd v ss (1) (2) (3) (5) (4) figure 10 figure 11 + v ref * delay circuit c d c d c d out * ra - rb rc n pch nch v ss v dd * parasitic diode td discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 13 [cautions] the open of c d terminal may cause double pulses shown in figure 12 at release. if the double pulses cause a trouble, attach 10pf or larger capacitor to the c d terminal. do not apply the voltage to the c d terminal. layout the print circuit board not to apply or flow out the current to/from the cd terminal. doing not so may cause inaccurate delay time.. use an external capacitor, cd of which leakage current can be ignored for the built-in constant-current value. a leakage current may cause an error of delay time. also, a leakage current over the built-in constant-current causes unrelease status. 3. other characteristics (1) temperature characteristic of detection voltage the temperature characteristics of the detection voltage are expressed by the oblique line parts in figure 12. (2) temperature characteristics of release voltage (3) temperature characteristics of hysteresis voltage samples of each temperature characteristics for (1) to (3) are shown in characteristics. the temperature factor of the release voltage is calculated by the temperature factor of the detection voltage as follows: d ta d +v det - 40 25 +0.54mv/ c - v det [v] 1.500 85 ta[ c] -0.54mv/ c figure 13 s-80915axmp: the temperature factor of the release voltage has a same sign characteristics as the temperature factor of the detection voltage. d ta d - v det +v det - v det = d +v det d ta figure 12 time the temperature characteristics of hysteresis voltage is calculated as follows: d +v det d ta - d - v det d ta = v hys - v det d - v det d ta d +v de d ta - d - v det d ta discontinued product
built-in delay circuit high-precision voltage detector s-809 series 14 seiko instruments inc. n characteristics (typical characteristics) (1) detection voltage (v det ) - temperature (ta) (2) hysteresis voltage width (vhys) - temperature (ta) ta ( c) vdet(v) vdet(v) (d) s-80960an ta ( c) vdet(v) (c) s-80915an 20 80 60 40 0 -20-40 100 6.4 6.2 6.0 +v det -v det ta ( c) 20 80 60 40 0 -20 -40 100 1.7 1.6 1.5 +v det -v det ta ( c) vdet(v) 5.8 1.4 ta ( c) vhys(%) ta ( c) vhys(%) (a) s-80911an 20 80 60 40 0 -20-40 100 +v det -v det 1.3 1.2 1.1 1.0 (b) s-80914an 1.6 1.5 1.4 20 80 60 40 0 -20-40 100 +v det -v det 1.3 (a) s-80911an 20 80 60 40 0 -20-40 100 8.0 7.0 6.0 5.0 4.0 3.0 (b) s-80914an 20 80 60 40 0 -20-40 100 8.0 7.0 6.0 5.0 4.0 3.0 discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 15 (3) current consumption (i ss ) - input voltage (v dd ) (c) s-80915an 20 80 60 40 0 -20-40 100 8.0 ta ( c) 7.0 6.0 5.0 4.0 3.0 (d) s-80960an 20 80 60 40 0 -20-40 100 8.0 ta ( c) vhys(%) 7.0 6.0 5.0 4.0 3.0 (a) s-80911al v dd (v) 0 1 2 3 4 i ss ( m a) 2.5 2.0 1.5 1.0 0.5 0.0 (b) s-80914al (c) s-80915al v dd (v) 0 2 4 6 8 10 i ss (ma) 2.5 2.0 1.5 1.0 0.5 0.0 12 (d) s-80960al v dd (v) 0 2 4 6 8 10 i ss (ma) 2.5 2.0 1.5 1.0 0.5 0.0 ta=25 c ta=25 c 5 6 7 8 15 m a v dd (v) 0 1 2 3 4 i ss ( m a) 2.5 2.0 1.5 1.0 0.5 0.0 5 6 7 8 18 m a 12.9 m a 3.4 m a ta=25 c ta=25 c 12 vhys(%) discontinued product
built-in delay circuit high-precision voltage detector s-809 series 16 seiko instruments inc. (4) current consumption (i ss ) - temperature (ta) (5) nch transistor output current (i out ) - v ds (6) pch transistor output current (i out ) - v ds ta ( c) iss ( m a) ta ( c) iss ( m a) (c) s-80915an 20 80 60 40 0 -20-40 100 2.0 ta ( c) iss ( m a) 1.5 1.0 0.5 0.0 (d) s-80960an 20 80 60 40 0 -20-40 100 2.0 ta ( c) iss ( m a) 1.5 1.0 0.5 0.0 v dd =3.5v v dd =7.5v (a) s-80960al 10 (a) s-80960al v ds (v) 60 50 40 30 20 10 0 0 1 2 3 4 5 v dd =6.0 v v dd =4.8 v v dd =3.6 v v dd =2.4 v v dd =1.2v (a) s-80915al v ds (v) 30 25 20 15 10 5 0 0 2 4 6 8 i out (ma) v dd =8.4 v v dd =7.2 v v dd =6.0 v v dd =4.8 v v dd =3.6 v v dd =2.4 v ta=25 c ta=25 c (a) s-80911an 20 80 60 40 0 -20-40 100 2.0 1.5 1.0 0.5 0.0 v dd =2.0v (b) s-80914an 20 8 60 40 0 -20-40 100 2.0 1.5 1.0 0.5 0.0 v dd =2.0v i out (ma) discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 17 (7) nch transistor output current (i out ) - input voltage(v dd ) (8) pch transistor output current(iout) - input voltage(vdd) (9) minimum operating voltage v ds =0.5v 5.0 4.0 3.0 2.0 1.0 0.0 0 2 4 6 8 10 12 ta= - 40 c ta=25 c ta=85 c (b) s-80915al v dd (v) i out (ma) v dd =0.5v (b) s-80960al 20 15 10 5 0 0 2 4 6 8 i out (ma) ta= - 40 c ta=25 c ta=85 c v dd (v) v out (v) 1.0 (b) s-80915an (pull- up v dd : 100kw) 0.0 0.0 v dd (v) 0.5 1.5 0.5 1.0 1.5 2.0 2.0 ta=-40 c ta =25 c ta=85 c 2.5 v dd (v) v ds =0.5v (a) s -80914al 0 0 0.5 1 2 3 0.5 1 2 1.5 3.5 2.5 1.5 i out (ma) ta= - 40 c ta=25 c ta=85 c ta= - 40 c v dd (v) ta=85 c ta=25 c (a) s-80911al 0 1.0 2 2.5 3 0 0.5 1 2 3 2.5 1.5 i out (ma) v ds =0.5v 1.5 v out (v) 1.0 (a) s-80911an (pull- up v dd : 100kw) 0.0 0.0 v dd (v) 0.5 1.5 0.5 1.0 1.5 2.0 2.0 ta= - 40 c ta =25 c ta=85 c 2.5 discontinued product
built-in delay circuit high-precision voltage detector s-809 series 18 seiko instruments inc. (10) dynamic response (c d : open) load capacitance ( m f) load capacitance ( m f) load capacitance ( m f) response time (ms) response time (ms) response time (ms) response time (ms) response time (ms) response time (ms) load capacitance( m f) 0.1 (e) s-80915al 0.0001 0.001 0.01 0.1 0.001 1 0.01 0.1 tplh tphl load capacitance ( m f) (f) s-80915an 0.0001 0.001 0.01 0.01 10 0.1 1 tplh tphl load capacitance ( m f) ta=25 c ta=25 c (a) s-80911al 0.0001 0.001 0.01 0.1 0.001 1 0.01 0.1 tplh tphl ta=25 c (b) s-80911an 0.0001 0.001 0.01 0.1 tplh tphl 0.01 10 0.1 1 ta=25 c (c) s-80914al 0.0001 0.001 0.01 0.1 0.001 1 0.01 0.1 tplh tphl ta=25 c (d) s-80914an 0.0001 0.001 0.01 0.01 10 0.1 1 tplh tphl ta=25 c discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 19 (11) delay time (td) - external capacitor(c d ) v dd ou v s input voltage output voltage v dd s-809 series v response time (ms) response time (ms) (h) s-80960an 0.0001 v 0.001 0.01 0.1 r* 100k w tplh tphl load capacitance ( m f) 0.01 10 0.1 1 (g) s-80960al 0.0001 0.001 0.01 0.1 0.001 1 0.01 0.1 tplh tphl load capacitance ( m f) ta=25 c ta=25 c (a) s-80911an *?r? is not needed for cmos output products. figure 14 measuring conditions of response time figure 15 measuring circuit of response time (a)to(d) : vih=6v, vil=0.80v (e)to(h) : vih=10v, vil=0.95v v dd 90 % v dd 10 % vih vil v dd tphl tplh 1 m sec 1 m sec c d (nf) 1000 1 10 100 0.1 0.01 0.1 1 10 100 td (ms) 1000 0.01 ta=25 c discontinued product
built-in delay circuit high-precision voltage detector s-809 series 20 seiko instruments inc. (12) delay time (tpd) - temperature (ta) (b) s-80915an 10000 10 100 1000 1 0.1 0.1 1 10 100 c d (nf) td (ms) 1000 0.01 (a) s-80911an ta ( c) td (ms) ta=25 c (b) s-80915an 20 80 60 40 0 -20-40 100 50 ta ( c) td (ms) 40 30 20 10 0 c d =4.7nf 20 80 60 40 0 -20-40 100 10 8 6 4 2 0 c d =4.7nf 9 7 5 3 1 v dd c d out v ss v dd s-809 series v v r 100k w v dd 90 % v ss vih vil td 1 m sec figure 16 measuring conditions of delay time figure 17 measuring circuit of delay time (a) : vih=6v, vil=0.80v (b) : vih=10v, vil=0.95v input voltage output voltage discontinued product
built-in delay dircuit high-precision voltage detector s-809 series seiko instruments inc. 21 n application circuit examples 1. microcomputer reset circuits with the s-809 series which has a low operating voltage, a high-precision detection voltage and hysteresis characteristic, the reset circuits shown in figures 18 to 19 can be easily constructed. 2. change of detection voltege in nch open-drain output products of the s-809 series, detection voltage can be changed using resistance dividers or diodes as shown in figures 20 and 21. in figure 20, hysteresis width is also changed. n notes ? in cmos output products of the s-809 series, through type current flows when the device is detecting or releasing. if a high impedance is connected to the input, oscillation may be caused due to the fall of the voltage by the through type current when lowering the voltage during releasing. ? when designing for mass production using an application circuit described herein, take the product deviation and temperature characteristic into consideration. ? seiko instruments inc. shall not bear any responsibility for the patents on the circuits described herein. v ss v ss v dd micro- computer s- 809xxal figure 18 (nch open-drain output products only) v dd1 v dd2 micro- computer s- 809xxan figure 19 ra 75k w ra out v in v ss v dd note1: if ra and rb are large, the hysteresis width may be larger than the value given by the formula above due to through type current (which flows slightly in nch open-drain circuit). note2: ra should be 75kwor less to prevent oscilation. + - s- 809xxan figure 20 r v f1 (nch open-drain products) (nch open-drain products) out v in v ss v dd s- 809xxan v f2 detection voltage = ? - v det ra+rb rb hysteresis width = ?v hys ra+rb rb figure 21 detection voltage =v f1 +v f2 + ( - v det ) discontinued product
3.250.15 ?1.5 +0.1 -0 ?1.0 +0.1 -0 4.00.1 2.00.05 0.270.05 1.40.2 feed direction sot-23-5 mp005-a 991105 0.95 0.1 2.90.2 +0.1 -0.06 0.16 1.90.2 0.40.1 12 3 4 5 210.5 20.2 (60) (60) f 130.2 12.5max. 9.00.3 +0.2 -0.3 2.8 1.6 1.10.1 0.45 1.3max 3 max. 3 max. 4.00.1 (10 pitches 40.0 0.2) taping specifications reel specifications dimensions unit mm 3000 pcs./reel discontinued product
markings 990603 809/816/8520 sot-23-5 4 1 3 5 discontinued product
the information described herein is subject to change without notice. seiko instruments inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. the application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. when the products described herein are regulated products subject to the wassenaar arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. use of the information described herein for other purposes and/or reproduction or copying without the express permission of seiko instruments inc. is strictly prohibited. the products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of seiko instruments inc. although seiko instruments inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. the user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. discontinued product

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