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? 2002 microchip technology inc. ds21656b-page 1 features ? rail-to-rail inputs and outputs optimized for single supply operation smallpackages:8-pinmsop,8-pinsoicor 8-pin pdip ultra low input bias current: less than 100pa low quiescent current: 8 a(typ.) operatesdowntov dd =1.8v applications power management circuits battery operated equipment consumer products device selection table package types general description the TC1025 is a dual low-power comparator with a typical supply current of 8 a and operation ensured to v dd = 1.8v. input and output signal swing is rail-to-rail. available in a space-saving 8-pin msop package, the TC1025 consumes half the board area required by a standard 8-pin soic package. it is also available in 8-pin soic and pdip packages. it is ideal for applica- tions requiring high integration, small-size and low power. functional block diagram part number package tem perature range TC1025cepa 8-pin pdip -40c to +85c TC1025ceua 8-pin msop -40c to +85c TC1025ceoa 8-pin soic -40c to +85c 1 2 3 4 8 7 6 5 t c 1 0 2 5c ep a t c 1 0 2 5c e ua t c 1 0 2 5c e oa inb+ v dd inb - v ss ina+ ina - ou t a outb 8-pin pdip 8 -pin m sop 8 -pin so i c + a ? + ? TC1025 outb v dd inb+ inb- ina - ina+ v ss outa b 1 2 3 4 8 7 6 5 TC1025 linear building block ? dual low power comparator
TC1025 ds21656b-page 2 ? 2002 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings* supply voltage ......................................................6.0v voltage on any pin .......... (v ss ? 0.3v) to (v dd +0.3v) junction temperature....................................... +150c operating temperature range............. -40c to +85c storage temperature range ..............-55c to +150c *stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. TC1025 electrical specifications electrical characteristics: typical values apply at 25c and v dd = 3.0v. minimum and maximum values apply for t a =-40to +85c, and v dd = 1.8v to 5.5v, unless otherwise specified. symbol parameter min typ max units test conditions v dd supply voltage 1.8 ? 5.5 v i q supply current ? 8 12 a comparator v icmr common mode input range v ss ?0.2 ? v dd +0.2 v v os input offset voltage -5 -5 ?+5 +5 mv mv v dd =3v,v cm =1.5v,t a =25c i b input bias current -100 ? 100 pa t a = 25c, in+,in- = v dd to v ss v oh output high voltage v dd ?0.3 ? ? v r l =10k ? to v ss v ol output low voltage ? ? 0.3 v r l =10k ? to v dd cmrr common mode rejection ratio 66 ? ? db t a =25c,v dd =5v v cm =v dd to v ss psrr power supply rejection ratio 60 ? ? db t a =25c,v cm =1.2v v dd =1.8vto5v i src output source current 1 ? ? ma in+ = v dd ,in-=v ss , outputshortedtov ss v dd =1.8v i sink output sink current 2 ? ? ma in+ = v ss ,in-=v dd , outputshortedtov dd v dd =1.8v t pd1 response time ? 4 ? sec 100mv overdrive, c l = 100pf t pd2 response time ? 6 ? sec 10mv overdrive, c l = 100pf
? 2002 microchip technology inc. ds21656b-page 3 TC1025 2.0 pin description the description of the pins are listed in table 2-1. table 2-1: pin function table pin no. (8-pin pdip) (8-pin msop) (8-pin soic) symbol description 1 outa comparator output. 2v ss negative power supply. 3 ina+ non inverting input. 4 ina- inverting input. 5 inb- inverting input. 6 inb+ non inverting input. 7v dd positive power supply. 8 outb comparator input.
TC1025 ds21656b-page 4 ? 2002 microchip technology inc. 3.0 detailed description the TC1025 is one of a series of very low-power, linear building block products targeted at low-voltage, single- supply applications. the TC1025 minimum operating voltage is 1.8v, and typical supply current is only 8 a. it combines two comparators in a single package. 3.1 comparators the TC1025 contains two comparators. the compara- tor?s input range extends beyond both supply voltages by 200mv and the outputs will swing to within several millivolts of the supplies depending on the load current being driven. the comparators exhibit propagation delay and supply current which are largely independent of supply voltage. the low input bias current and offset voltage make them suitable for high impedance precision applications. 4.0 typical applications the TC1025 lends itself to a wide variety of applications, particularly in battery-powered systems. typically, it finds application in power management, processor supervisory, and interface circuitry. 4.1 external hysteresis (comparator) hysteresis can be set externally with two resistors using positive feedback techniques (see figure 4-1). the design procedure for setting external comparator hysteresis is as follows: 1. choose the feedback resistor r c .sincethe input bias current of the comparator is at most 100pa, the current through r c canbesetto 100na (i.e., 1000 times the input bias current) and retain excellent accuracy. the current through r c at the comparator?s trip point is v r / r c where v r is a stable reference voltage. 2. determine the hysteresis voltage (v hy ) between the upper and lower thresholds. 3. calculate r a as follows: equation 4-1: 4. choose the rising threshold voltage for v src (v thr ). 5. calculate r b as follows: equation 4-2: 6. verify the threshold voltages with these formulas: v src rising: equation 4-3: v src falling: equation 4-4: r a r c v hy v dd ---------- - ?? ?? = r b 1 v thr v r r a --------------------- ? ? ? ? 1 r a ------- ? 1 r c ------- ? ---------------------------------------------------------- - = v thr v r () r a () 1 r a ------- ?? ?? 1 r b ------- ?? ?? 1 r c ------- ?? ?? ++ = v thf v thr r a v dd r c ------------------------ - ?? ?? ? =
? 2002 microchip technology inc. ds21656b-page 5 TC1025 4.2 32.768 khz ?time of day clock? crystal controlled oscillator a very stable oscillator driver can be designed by using a crystal resonator as the feedback element. figure 4-2 shows a typical application circuit using this technique to develop clock driver for a time of day (tod) clock chip. the value of r a and r b determine the dc voltage level at which the comparator trips ? in this case one- half of v dd . the rc time constant of r c and c a should be set several times greater than the crystal oscillator?s period, which will ensure a 50% duty cycle by maintain- ing a dc voltage at the inverting comparator input equal to the absolute average age of the output signal. 4.3 non-retriggerable one shot multivibrator using two comparators, a non-retriggerable one shot multivibrator can be designed using the circuit configu- ration of figure 4-3. a key feature of this design is that the pulse width is independent of the magnitude of the supply voltage because the charging voltage and the intercept voltage are a fixed percentage of v dd .in addition, this one shot is capable of pulse width with as much as a 99% duty cycle and exhibits input lockout to ensure that the circuit will not retrigger before the output pulse has completely timed out. the trigger level is the voltage required at the input to raise the voltage at node a higher than the voltage at node b, and is set by the resistive divider r4 and r10 and the impedance network composed of r1, r2 and r3. when the one shot has been triggered, the output of cmptr2 is high, causing the reference voltage at the non-inverting input of cmptr1 to go to v dd . this prevents any additional input pulses from disturbing the circuit until the output pulse has timed out. thevalueofthetimingcapacitorc1mustbesmall enough to allow cmptr1 to discharge c1 to a diode voltage before the feedback signal from cmptr2 (through r10) switches cmptr1 to its high state and allows c1 to start an exponential charge through r5. proper circuit action depends upon rapidly discharging c1 through the voltage set by r6, r9 and d2 to a final voltage of a small diode drop. two propagation delays afterthevoltageonc1dropsbelowthelevelonthe non-inverting input of cmptr2, the output of cmptr1 switches to the positive rail and begins to charge c1 through r5. the time delay which sets the output pulse width results from c1 charging to the reference voltage set by r6, r9 and d2, plus four comparator propaga- tion delays. when the voltage across c1 charges beyond the reference, the output pulse returns to ground and the input is again ready to accept a trigger signal. 4.4 oscillators and pulse width modulators microchip?s linear building block comparators adapt well to oscillator applications for low frequencies (less than 100khz). figure 4-4 shows a symmetrical square wave generator using a minimum number of compo- nents. the output is set by the rc time constant of r4 and c1, and the total hysteresis of the loop is set by r1, r2 and r3. the maximum frequency of the oscillator is limited only by the large signal propagation delay of the comparator in addition to any capacitive loading at the output which degrades the slew rate. to analyze this circuit, assume that the output is initially high. for this to occur, the voltage at the inverting input must be less than the voltage at the non-inverting input. therefore, capacitor c1 is discharged. the voltage at the non-inverting input (v h )is: equation 4-5: where, if r1 = r2 = r3, then: equation 4-6: capacitor c1 will charge up through r4. when the voltage at the comparator?s inverting input is equal to v h , the comparator output will switch. with the output at ground potential, the value at the non-inverting input terminal (v l ) is reduced by the hysteresis network to a value given by: equation 4-7: using the same resistors as before, capacitor c1 must now discharge through r4 toward ground. the output will return to a high state when the voltage across the capacitor has discharged to a value equal to v l .the period of oscillation will be twice the time it takes for the rc circuit to charge up to one half its final value. the period can be calculated from: equation 4-8: v h r2 v dd () r2 r1 r3 || () + [] --------------------------------------------- = v h 2v dd () 3 ------------------- = v l v dd 3 ---------- - = 1 freq ----------------- 2 0 . 6 9 4 () r4 () c1 () =
TC1025 ds21656b-page 6 ? 2002 microchip technology inc. the frequency stability of this circuit should only be a function of the external component tolerances. figure 4-5 shows the circuit for a pulse width modulator circuit. it is essentially the same as in figure 4-4, but with the addition of an input control voltage. when the input control voltage is equal to one-half v dd , operation is basically the same as described for the free-running oscillator. if the i nput control voltage is moved above or below one-half v dd , the duty cycle of the output square wave will be altered. this is because the addition of the control voltage at the input has now altered the trip points. the equations for these trip points are shown in figure 4-5 (see v h and v l ). pulse width sensitivity to the input voltage variations can be increased by reducing the value of r6 from 10k ? and conversely, sensitivity will be reduced by increasing the value of r6. the values of r1 and c1 can be varied to produce the desired center frequency. figure 4-1: comparator external hysteresis configuration figure 4-2: 32.768 khz ?time of day? clock oscillator figure 4-3: non-retriggerable multivibrator + ? v r v dd v out v src r a r b r c 1/2 TC1025 + v dd v out v dd r b 150k r a 150k r c 1m c a 100pf 32.768khz v per = 30.52 sec 1/2 TC1025 _ + ? + ? v dd cmptr1 cmptr2 in in out out r3 1m r4 1m r6 562k r7 1m r2 100k r1 100k r8 d2 d1 10m r9 243k r5 10m c1 100pf r10 61.9k a b c gnd t 0 c gnd v dd gnd v dd TC1025 TC1025
? 2002 microchip technology inc. ds21656b-page 7 TC1025 figure 4-4: square wave generator figure 4-5: pulse width modulator + ? r1 100k v dd r4 v dd r3 100k r2 100k c1 v h = r2 (v dd ) r2 + (r1||r3) v l = (v dd ) (r2||r3) r1 + (r2||r3) freq = 1 2(0.694)(r4)(c1) 1/2 TC1025 TC1025 + ? r6 10k r4 v c v dd v dd r1 100k r3 100k r2 100k c1 freq = 1 2 2 (0.694) (r4) (c1) for square wave generation select r1 = r2 = r3 TC1025 v h = v c = v dd v dd (r 1 r 2 r 6 + r 2 r 3 r 6 ) + v c (r 1 r 2 r 3 ) r 1 r 2 r 6 + r 1 r 3 r 6 + r 2 r 3 r 6 + r 1 r 2 r 3 v dd (r 2 r 3 r 6 ) + v c (r 1 r 2 r 3 ) r 1 r 2 r 6 + r 1 r 3 r 6 + r 2 r 3 r 6 + r 1 r 2 r 3 v l = 1/2 TC1025
TC1025 ds21656b-page 8 ? 2002 microchip technology inc. 5.0 typical characteristics note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 7 6 5 4 3 2 1.5 2 2.5 3 3.5 4 4.5 5 5.5 supply voltage (v) supply voltage (v) comparator propagation delay vs. supply voltage delay to rising edge ( sec) overdrive = 10mv overdrive = 50mv 7 6 5 4 3 2 1.5 2 2.5 3 3.5 4 4.5 5 5.5 delay to falling edge ( sec) 7 6 5 4 3 -40 c85 c 25 c temperature ( c) delay to rising edge ( sec) overdrive = 100mv overdrive = 10mv overdrive = 50mv comparator propagation delay vs. supply voltage comparator propagation delay vs. temperature t a = 25 c c l = 100pf t a = 25 c c l = 100pf overdrive = 100mv v dd = 4v v dd = 5v v dd = 2v v dd = 3v -40 c85 c 25 c 2.5 2.0 1.5 1.0 .5 0 0 12 3 45 6 v dd - v out (v) i source (ma) 7 6 5 4 3 comparator output swing vs. output source current delay to falling edge ( sec) overdrive = 100mv 2.5 2.0 1.5 1.0 .5 0 012 345 comparator propagation delay vs. temperature comparator output swing vs. output sink current temperature ( c) i sink (ma) v dd = 4v v dd = 5v v dd = 2v v dd = 3v t a = 25 c t a = 25 c v dd = 3v v dd = 1.8v v dd = 5.5v v dd = 3v v dd = 1.8v v dd = 5.5v v out - v ss (v) 6 60 50 sinking 40 30 20 10 0 0 12 3 45 6 output short-circuit current (ma) supply voltage (v) comparator output short-circuit current vs. supply voltage sourcing t a = -40 c 10 9 8 7 6 5 4 0 12 3 45 6 supply current ( a) supply voltage (v) supply current vs. supply voltage t a = -40 c t a = -40 c t a = 85 c t a = 25 c t a = 25 c t a = 85 c t a = 25 c t a = 85 c
? 2002 microchip technology inc. ds21656b-page 9 TC1025 6.0 packaging information 6.1 package marking information package marking data not available at this time. 6.2 taping form component taping orientation for 8-pin msop devices package carrier width (w) pitch (p) part per full reel reel size 8-pin msop 12 mm 8 mm 2500 13 in carrier tape, number of components per reel and reel size pin 1 user direction of feed standard reel component orientation for tr suffix device w p component taping orientation for 8-pin soic (narrow) devices package carrier width (w) pitch (p) part per full reel reel size 8-pin soic (n) 12 mm 8 mm 2500 13 in carrier tape, number of components per reel and reel size standard reel component orientation for tr suffix device pin 1 user direction of feed p w
TC1025 ds21656b-page 10 ? 2002 microchip technology inc. 6.3 package dimensions 3 min. pin 1 .260 ( 6.60 ) .240 ( 6.10 ) .045 ( 1.14 ) .030 ( 0.76 ) .070 ( 1.78 ) .040 ( 1.02 ) .400 ( 10.16 ) .348 ( 8.84 ) .200 ( 5.08 ) .140 ( 3.56 ) .150 ( 3.81 ) .115 ( 2.92 ) .110 ( 2.79 ) .090 ( 2.29 ) .022 ( 0.56 ) .015 ( 0.38 ) .040 ( 1.02 ) .020 ( 0.51 ) .015 ( 0.38 ) .008 ( 0.20 ) .310 ( 7.87 ) .290 ( 7.37 ) .400 ( 10.16 ) .310 ( 7.87 ) 8 -p i n plast i c di p dimensions: inches (mm) 8-pin msop .122 (3.10) .114 (2.90) .122 (3.10) .114 (2.90) .043 (1.10) max. .006 (0.15) .002 (0.05) .016 (0.40) .010 (0.25) .197 (5.00) .189 (4.80) .008 (0.20) .005 (0.13) .028 (0.70) .016 (0.40) 6 max. .026 (0.65) typ. pin 1 dimensions: inches (mm)
? 2002 microchip technology inc. ds21656b-page 11 TC1025 6.3 package dimensions (continued) .050 ( 1.27 ) typ . 8 8 -pin so i c dimensions: inches (mm)
TC1025 ds21656b-page 12 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21656b-page13 TC1025 sales and support data sheets products supported by a preliminary data sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. to determine if an errata sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip corporate literature center u.s. fax: (480) 792-7277 3. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC1025 ds21656b-page14 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21656b-page 15 TC1025 information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warranty is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchip ? sproductsascriticalcom- ponents in life support systems is not authorized except with express written approval by microchip. no licenses are con- veyed, implicitly or otherwise, under any intellectual property rights. trademarks the microchip name and logo, the microchip logo, filterlab, k ee l oq ,microid, mplab,pic,picmicro,picmaster, picstart, pro mate, seeval and the embedded control solutions company are registered trademarks of microchip tech- nology incorporated in the u.s.a. and other countries. dspic, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, microport, migratable memory, mpasm, mplib, mplink, mpsim, mxdev, picc, picdem, picdem.net, rfpic, select mode and total endurance are trademarks of microchip technology incorporated in the u.s.a. serialized quick turn programming (sqtp) is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2002, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. microchip received qs-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona in july 1999 and mountain view, california in march 2002. the company?s quality system processes and procedures are qs-9000 compliant for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperipherals, non-volatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001 certified.
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