the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. npn silicon power transistor 2sd882 npn silicon po wer transistor data sheet document no. d17116ej2v0ds00 (2nd edition) (previous no. tc-3564) date published march 2004 n cp(k) printed in japan c the mark shows major revised points. 2004 description the 2sd882 is npn silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, dc-dc converter and relay driver. features ? low saturation voltage v ce(sat) = 0.5 v max. (i c = ? 2 a, i b = 0.2 a) ? excellent h fe linearity and high h fe h fe = 60 to 400 (v ce = 2 v, i c = 1 a) ? less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. no insulator bushing required. absolute maximum ratings maximum temperature storage temperature ? 55 to +150 c junction temperature 150 c maximum maximum power dissipations total power dissipation (t a = 25 c) 1.0 w total power dissipation (t c = 25 c) 10 w maximum voltages and currents (t a = 25 c) v cbo collector to base voltage 40 v v ceo collector to emitter voltage 30 v v ebo emitter to base voltage 5.0 v i c(dc) collector current (dc) 3.0 a i c(pulse) note collector current (pulse) 7.0 a note pulse test pw 350 s, duty cycle 2% electrical characteristics (t a = 25 c) characteristic symbol test conditions min. typ. max. unit dc current gain h fe1 v ce = 2.0 v, i c = 20 ma note 30 150 dc current gain h fe2 v ce = 2.0 v, i c = 1.0 a note 60 160 400 gain bandwidth product f t v ce = 5.0 v, i c = 0.1 a 90 mhz output capacitance c ob v cb = 10 v, i e = 0, f = 1.0 mhz 45 pf collector cutoff current i cbo v cb = 30 v, i e = 0 a 1.0 a emitter cutoff current i ebo v eb = 3.0 v, i c = 0 a 1.0 a collector saturation voltage v ce(sat) i c = 2.0 a, i b = 0.2 a note 0.3 0.5 v base saturation voltage v be(sat) i c = 2.0 a, i b = 0.2 a note 1.0 2.0 v note pulse test: pw 350 s, duty cycle 2% classification of h fe rank r q p e range 60 to 120 100 to 200 160 to 320 200 to 400 remark test conditions: v ce = 2.0 v, i c = 1.0 a package drawing (unit: mm) 8.5 max. 3.2 0.2 12 typ. 2.3 typ. 2.3 typ. 1.2 typ. 0.55 2.5 0.2 12.0 max. 13.0 min. 2.8 max. 3.8 0.2 0.8 +0.08 ?0.05 +0.08 ?0.05 1: emitter 2: collector: connected to mounting plane 3: base
data sheet d17116ej2v0ds 2 2sd882 typical characteristics (t a = 25c) i c ? = ? 10 ? a ? ? ? i b i e ? = ? 0 ? a ? (c ob ) i c ? = ? 0 ? a ? (c ib ) t a t c v ce i c i c i c v cb v eb v ce v ce ? = ? 10 ? v v ce i c ? = ? 1.0 ? a i c(dc) max. t c ? = ? 25 c i c i c i c(pulse) 50% i b h fe ? r th p t h fe v be v be c ib c ob c ib c ob f t v ce ? = ? 5.0 ? v v be(sat) v ce(sat) v be(sat) v ce(sat) note note v ceo
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