SUB50N04-07T vishay siliconix new product document number: 71419 s-03270?rev. a, 12-feb-01 www.vishay.com 1 n-channel 40-v (d-s) mosfet with sensing diode
v (br)dss (v) r ds(on) ( ) i d (a) 40 0.0075 @ v gs = 10 v 50 a d 2 pak-5l s gd t 1 5 1 3 24 t 2 t 1 t 2 d 2 d 1 d g s n-channel mosfet
parameter symbol limit unit drain-source voltage v ds 40 gate-source voltage v gs 20 v d t c = 25 c 50 a continuous drain current (t j = 175 c) d t c = 100 c i d 50 a pulsed drain current i dm 200 a continous diode current (diode conduction) d i s 50 a avalanche current i ar 50 a repetitive avalanche energy b l = 0.1 mh e ar 125 mj t c = 25 c 200 c maximum power dissipation a t a = 25 c p d 3.75 d w operating junction and storage temperature range t j , t stg ?55 to 175 c
parameter symbol limit unit junction-to-ambient d pcb mount d r thja 40 junction-to-case r thjc 0.75 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
SUB50N04-07T vishay siliconix new product www.vishay.com 2 document number: 71419 s-03270 ? rev. a, 12-feb-01
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 2 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 32 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 32 v, v gs = 0 v, t j = 125 c 50 dss v ds = 32 v, v gs = 0 v, t j = 175 c 500 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 25 a 0.0063 0.0075 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 25 a, t j = 125 c 0.011 ds(on) v gs = 10 v, i d = 25 a, t j = 175 c 0.014 v fd1 i f = 50 a 655 715 sense diode forward voltage v fd2 i f = 25 a 600 660 mv sense diode forward voltage increase v f from i f = 25 a to i f = 50 a 30 80 forward transconductance a g fs v ds = 15 v, i d = 20 a 35 s dynamic b input capacitance c iss 6400 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf reversen transfer capacitance c rss 630 total gate charge c q g 115 150 gate-source charge c q gs v ds = 20 v, v gs = 10 v, i d = 25 a 35 nc gate-drain charge c q gd ds gs d 35 turn-on delay time c t d(on) 15 20 rise time c t r v dd = 20 v, r l = 0.8 150 210 turn-off delay time c t d(off) v dd = 20 v, r l = 0.8 i d 25 a, v gen = 10 v, r g = 2.5 60 85 ns fall time c t f d gen g 80 110 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 50 pulsed current i sm 200 a forward voltage a v sd i f = 50 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 45 70 ns peak reverse recovery current i rm(rec) i f = 50 a, di/dt = 100 a/ s 2.5 5 a reverse recovery charge q rr f 0.06 0.18 c notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUB50N04-07T vishay siliconix new product document number: 71419 s-03270 ? rev. a, 12-feb-01 www.vishay.com 3 0 2000 4000 6000 8000 10000 048121620 0 4 8 12 16 20 0 50 100 150 200 0 40 80 120 160 200 0 20 40 60 80 100 120 0.000 0.003 0.006 0.009 0.012 0 20 40 60 80 100 120 0 50 100 150 200 0246 0 50 100 150 200 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs v gs ? gate-to-source voltage (v) ? transconductance (s) g fs 25 c ? 55 c 5 v t c = 125 c v gs = 20 v i d = 25 a v gs = 10 thru 7 v v gs = 10 v c iss c oss c rss t c = ? 55 c 25 c 125 c ? on-resistance ( r ds(on) ) ? drain current (a) i d 6 v 3, 4 v
SUB50N04-07T vishay siliconix new product www.vishay.com 4 document number: 71419 s-03270 ? rev. a, 12-feb-01 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.2 0.6 0.4 1.0 1.2 v gs = 10 v i d = 25 a t j = 25 c (normalized) ? on-resistance ( r ds(on) ) 0 0.8 t j = 150 c drain source breakdown vs. junction t emperature avalanche current vs. time 40 43 46 49 52 55 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) t in (sec) 1000 10 0.00001 0.001 0.1 1 100 (a) i dav 0.01 (v) v (br)dss 0.0001 i av (a) @ t a = 25 c i av (a) @ t a = 150 c 1 0.1 i d = 250 a 0.0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 sense diode forward v oltage vs. t emperature t j ? junction temperature ( c) (v) i f i d = 50 a i d = 25 a sense diode forward voltage v f (v) 0.01 0.0001 0.000001 0.25 1.0 0.5 1.5 t j = 25 c 0 1.25 (v) i f 0.00001 0.001 t j = 150 c 0.75
SUB50N04-07T vishay siliconix new product document number: 71419 s-03270 ? rev. a, 12-feb-01 www.vishay.com 5
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 duty cycle = 0.5 ? drain current (a) i d 1 100 ms dc 10 ms 1 ms 100 s 10 s 0.02 single pulse
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