to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas el ectronics products li sted herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by rene sas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringeme nt of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electroni cs products or techni cal information descri bed in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyri ghts or other intell ectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any re nesas electronics product, wh ether in whole or in part . 4. descriptions of circuits, software and other related informat ion in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully re sponsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with the applicable export control laws and regulations and follow the proc edures required by such laws and re gulations. you should not use renesas electronics products or the technology described in this docum ent for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable dom estic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing th e information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. renesas electronics products ar e classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product de pends on the product?s quality grade, as indicated below. you must check the qua lity grade of each renesas electronics pr oduct before using it in a particular application. you may not use any renesas electronics produc t for any application categorized as ?speci fic? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. re nesas electronics shall not be in any way liable for any damages or losses incurred by you or third partie s arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intende d where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electr onics data sheets or data books, etc. ?standard?: computers; office equipmen t; communications e quipment; test and measurement equipment; audio and visual equipment; home electronic a ppliances; machine tools; personal electronic equipmen t; and industrial robots. ?high quality?: transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specif ically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support device s or systems), surgical im plantations, or healthcare intervention (e.g. excision, etc.), and any other applicati ons or purposes that pose a di rect threat to human life. 8. you should use the renesas electronics pr oducts described in this document within the range specified by renesas electronics , especially with respect to the maximum ra ting, operating supply voltage range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its produc ts, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate a nd malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physic al injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safe ty design for hardware and software in cluding but not limited to redundancy, fire control and malfunction prevention, appropri ate treatment for aging degradation or an y other appropriate measures. because the evaluation of microcomputer software alone is very difficult , please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesa s electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regul ate the inclusion or use of c ontrolled substances, including wi thout limitation, the eu rohs directive. renesas electronics assumes no liability for damage s or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in w hole or in part, without prio r written consent of renes as electronics. 12. please contact a renesa s electronics sales office if you have any questi ons regarding the informat ion contained in this document or renesas electroni cs products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1996, 1999 mos field effect transistor m m m m pa1810 p-channel mos field effect transistor for switching data sheet document no. d11819ej1v0ds00 (1st edition) date published june 1999 ns cp(k) printed in japan description the m pa1810 is a switching device which can be driven directly by a 2.5 v power source. the m pa1810 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. features can be driven by a 2.5 v power source low on-state resistance r ds(on)1 = 55 m w max. (v gs = C4.5 v, i d = C2.0 a) r ds(on)2 = 60 m w max. (v gs = C4.0 v, i d = C2.0 a) r ds(on)3 = 100 m w max. (v gs = C2.5 v, i d = C2.0 a) ordering information part number package m pa1810gr-9jg power tssop8 absolute maximum ratings (t a = 25c) drain to source voltage v dss C12 v gate to source voltage v gss - 10/+5 v drain current (dc) i d(dc) 4.0 a drain current (pulse) note1 i d(pulse) 16 a total power dissipation note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg C55 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. mounted on ceramic substrate of 5000 mm 2 x 1.1 mm remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit : mm) 14 85 6.4 0.2 4.4 0.1 1.0 0.2 0.145 0.055 0.1 1, 5, 8 : drain 2, 3, 6, 7: source 4 : gate 0.8 max. 3.15 0.15 3.0 0.1 0.65 0.10 m 0.27 +0.03 C0.08 0.25 0.5 3 +5 C3 0.6 +0.15 C0.1 1.2 max. 0.10.05 1.00.05 equivalent circuit source body diode gate protection diode gate drain
data sheet d11819ej1v0ds00 2 m m m m pa1810 electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ?12 v, v gs = 0 v ?10 m a gate leakage current i gss v gs = 10 v, v ds = 0 v10 m a gate cut-off voltage v gs(off) v ds = ?10 v, i d = ?1 ma ?0.5 ?0.8 ?1.5 v forward transfer admittance | y fs |v ds = ?10 v, i d = ?2.0 a2.58.5s drain to source on-state resistance r ds(on)1 v gs = ?4.5 v, i d = ?2.0 a4155m w r ds(on)2 v gs = ?4.0 v, i d = ?2.0 a4360m w r ds(on)3 v gs = ?2.5 v, i d = ?2.0 a 71 100 m w input capacitance c iss v ds = ?10 v 1100 pf output capacitance c oss v gs = 0 v 750 pf reverse transfer capacitance c rss f = 1 mhz 240 pf turn-on delay time t d(on) v dd = ?10 v40ns rise time t r i d = ?2.0 a 100 ns turn-off delay time t d(off) v gs(on) = ?4.0 v90ns fall time t f r g = 5 w 70 ns total gate charge q g v dd = ?10 v35nc gate to source charge q gs i d = ?4.0 a5nc gate to drain charge q gd v gs = ?4.0 v16nc diode forward voltage v f(s-d) i f = 4.0 a, v gs = 0 v0.75v reverse recovery time t rr 50 ns reverse recovery charge q rr i f = 4.0 a, v gs = 0 v di/dt = 100 a/ m s 35 nc test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd t = 1 s m duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % t r g = 10 w i d 0 t on t off pg. 50 w d.u.t. r l v dd i g = 2 ma
data sheet d11819ej1v0ds00 3 m m m m pa1810 typical characteristics (t a = 25 c) 30 60 90 120 150 derating factor of forward bias safe operating area 100 80 60 40 20 0 dt - derating factor - % t a - ambient temperature - c forward bias safe operating area - 10 - 100 i d - drain current - a - 1 v ds - drain to source voltage - v - 100 - 10 - 1 - 0.1 - 0.01 - 0.1 r ds(on) limited (@v gs = - 4.5 v) 100 ms 10 ms pw = 1 ms i d (pulse) i d (dc) t a = 25 c single pulse mounted on ceramic substrate of 50cm x 1.1mm 2 dc - 0.01 - 0.001 - 0.5 0 - 1.0 - 1.5 - 2.0 - 3.0 - 2.5 - 100 - 10 - 1 - 0.1 v gs - gate to sorce voltage - v 75c t a = 125c - 25c 25c v ds = - 10 v transfer characteristics i d - drain current - a gate to source cut-off voltage vs. channel temperature t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v v ds = - 10 v i d = - 1 ma - 50 50 100 0 150 - 1.0 - 0.8 - 0.9 - 0.7 - 0.6 - 0.5 - 1 - 10 - 100 - 0.1 v ds = - 10v i d - drain current - a | y fs | - forward transfer admittance - s 1 10 0.1 100 t a = - 25 c 25 c 75 c 125 c forward transfer admmittance vs. drain current drain to source on-state resistance vs. drain current - 1 - 0.1 - 0.01 - 10 - 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m w 20 t a = 125 c 75 c - 25 c 25 c 40 60 100 80 v gs = - 2.5 v
data sheet d11819ej1v0ds00 4 m m m m pa1810 drain to source on-state resistance vs. drain current - 1 - 0.1 - 0.01 - 10 - 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m w 20 t a = 125 c 75 c - 25 c 25 c 40 60 80 v gs = - 4.0 v drain to source on-state resistance vs. channel temperature t ch - channel temperature -c i d = - 2.0 a - 50 0 50 100 150 40 20 80 60 100 r ds (on) - drain to source on-state resistance - m w v gs = - 2.5 v - 4.0 v 0 40 20 60 80 100 - 2 - 4 - 6 - 8 - 10 r ds (on) - drain to source on-state resistance - m w v gs - gate to source voltage - v i d = - 2.0 a drain to source on-state resistance vs. gate to source voltage capacitance vs. drain to source voltage v ds - drain to source voltage - v ciss, coss, crss - capacitance - pf 10 - 1 100 1000 10000 - 10 - 100 f = 1 mhz v gs = 0v c iss c rss c oss - 0.1 - 1 - 10 i d - drain current - a td (on) , tr, td (off) , tf - swwitchig time - ns 100 1000 10 switching characteristics v dd = - 10 v v gs ( on ) = - 4.0 v r g = 5 w td (off) td (on) tf tr 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 source to drain diode forward voltage i f - source to drain current - a v f(s-d) - source to drain voltage - v
data sheet d11819ej1v0ds00 5 m m m m pa1810 q g - gate charge - nc 0 10 20 30 40 50 60 dynamic input characteristics v gs - gate to source voltage - v 0 - 4 - 2 - 6 - 8 - 10 v dd = - 10 v i d = - 4.0 a transient thermal resistance vs. pulse width pw - pulse width - s r th(ch-a) - transient thermal resistance - c/w 10 0.1 1 1000 100 0.01 0.001 0.1 110 1000 100 mounted on ceramic substrate of 50 cm 2 x 1.1 mm single pulse 62.5 c/w
data sheet d11819ej1v0ds00 6 m m m m pa1810 [memo]
data sheet d11819ej1v0ds00 7 m m m m pa1810 [memo]
m m m m pa1810 the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. ? no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. ? nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. ? descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. ? while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ? nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8
|
