features broadband performance low insertion loss; 1.0db typ at 3ghz ultra low dc power consumption fast switching speed; 3ns typical positive or negative voltage operation high compression point; 34dbm typ. description the P35-4232-000-200 is a high power gallium arsenide single pole double throw broadband rf switch mmic. it is suitable for use in broadband communications and instrumentation applications. a high impedance reflective termination is presented at the isolated output of the switch. control is effected by the application of complimentary 0v/-5v or 0/-8v signals to the control lines in accordance with the truth table. alternatively, positive control voltages may be used if the vref terminal is connected to the positive supply and decoupled to a good rf ground. in this case dc blocking capacitors should be used in series with the input and output rf connections. this die is fabricated using moc's 0.5 m m gate length mesfet process (s20) and is fully protected using silicon nitride passivation for excellent performance and reliability. this device is also available packaged in a low-cost plastic package or higher performance ceramic package. electrical performance ambient temperature = 223c, z o = 50 w , control voltages = 0v/-5v unless otherwise stated notes 1. return loss measured in low loss switch state. 2. input power at which insertion loss compresses by 1db. gaas mmic spdt reflective switch, dc - 6ghz P35-4232-000-200 marconi optical components parameter conditions min typ max units parameter conditions min typ max units insertion loss dc - 3ghz - 1.0 1,2 db 3 - 6ghz - 2.0 2.5 db isolation dc - 3ghz 20 22 - db 3 - 6ghz 17 20 - db input return loss 1 dc - 3ghz 15 18 - db 3 - 6ghz 10 12 - db output return loss 1 dc - 3ghz 15 16 - db 3 - 6ghz 10 15 - db 1db power compression point 2 0/-5v control; 2ghz - 34 - dbm 0/-8v control; 2ghz - 35 - dbm switching speed 50% control to 10%90%rf - 3 - ns
typical performance at 22c absolute maximum ratings max vref voltage +8v max control voltage vref - 8v max i/p power +33 dbm operating temperature -60c to +125c storage temperature -65c to +150c insertion loss isolation input return loss output return loss
P35-4232-000-200 marconi optical components chip outline electrical schematic switching truth table (vref = 0v) pin details chip handling, mounting and bonding pin function 1 rf in 2 control b 3 rf2 4 vref 5 rf1 6 control a a b rf in-rf1 rf in-rf 2 0v -5v low loss isolated -5v 0v isolated low loss switching truth table (vref = 5v) a b rf in-rf1 rf in-rf 2 5v 0v low loss isolated 0v 5v isolated low loss die size 1.07 x 0.61mm bond pad size 100 m m x 100 m m die thickness: 210 m m the back of the chip is gold metallized and can be die-attached manually onto gold, eutectically with au-sn (80:20) or with low temperature conductive epoxy. the maximum allowable chip temperature is 310c for 2 minutes. bonds should be made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. bonding should be achieved with the chip face at 225c to 275c with a heated thermosonic wedge (approx. 125c) and a maximum force of 60 grams. ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. the length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the rf and ground pads.
the data and product specifications are subject to change without notice. these devices should not be used for device qualification and production without prior notice. ? marconi optical components ltd 2001 www.moc.marconi.com moc, caswell, towcester, northants, nn12 8eq, tel:+44 1327 356468 fax +44 1327 356698 462/sm/01746/200 iss 1/2 ordering information: P35-4232-000-200
|
