features trenchfet power mosfet applications level shift load switch SI4501ADY vishay siliconix new product document number: 71922 s-21166?rev. a, 29-jul-02 www.vishay.com 1 complementary (n- and p-channel) mosfet half-bridge product summary v ds (v) r ds(on) ( ) i d (a) 0.018 @ v gs = 10 v 8.8 n-channel 30 0.027 @ v gs = 4.5 v 7.0 0.042 @ v gs = -4.5 v - 5.7 p-channel -8 0.060 @ v gs = -2.5 v -4.8 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 s 2 g 2 g 1 s 1 d 1 /d 2 absolute maximum ratings (t a = 25 c unless otherwise noted) n-channel p-channel parameter symbol 10 sec. steady state 10 sec. steady state unit drain-source voltage v ds 30 -8 gate-source voltage v gs 20 8 v t a = 25 c 8.8 6.3 - 5.7 -4.1 continuous drain current (t j = 150 c) a, b t a = 70 c i d 7 5.2 -4.5 -3.3 pulsed drain current i dm 30 -30 a continuous source current (diode conduction) a, b i s 1.8 1.0 -1.8 1.0 t a = 25 c 2.5 1.3 2.5 1.3 maximum power dissipation a, b t a = 70 c p d 1.6 0.84 1.6 0.84 w operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings n-channel p- channel parameter symbol typ max typ max unit t 10 sec 40 50 42 50 maximum junction-to-ambient a steady-state r thja 75 95 76 95 c/w maximum junction-to-foot (drain) steady-state r thjf 18 23 21 26 c/w notes a. surface mounted on fr4 board. b. t 10 sec
SI4501ADY vishay siliconix new product www.vishay.com 2 document number: 71922 s-21166 ? rev. a, 29-jul-02 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static v ds = v gs , i d = 250 a n-ch 0.8 1.8 gate threshold voltage v gs(th) v ds = v gs , i d = -250 a n-ch p-ch -0.45 1.0 v v ds = 0 v, v gs = 20 v n-ch 100 gate-body leakage i gss v ds = 0 v, v gs = 8 v n-ch p-ch 100 na v ds = 24 v, v gs = 0 v n-ch 1 v ds = -6.4 v, v gs = 0 v n-ch p-ch -1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 55 c n-ch 5 a v ds = -6.4 v, v gs = 0 v, t j = 55 c n-ch p-ch -5 v ds = 5 v, v gs = 10 v n-ch 30 on-state drain current b i d(on) v ds = -5 v, v gs = -4.5 v n-ch p-ch -20 a v gs = 10 v, i d = 8.8 a n-ch 0.015 0.018 v gs = -4.5 v, i d = -5.7 a n-ch p-ch 0.030 0.042 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 7.0 a n-ch 0.022 0.027 v gs = -2.5 v, i d = -4.8 a n-ch p-ch 0.048 0.060 v ds = 15 v, i d = 8.8 a n-ch 18 forward transconductance b g fs v ds = -15 v, i d = -5.7 a n-ch p-ch 12 s i s = 1.8 a, v gs = 0 v n-ch 0.73 1.1 diode forward voltage b v sd i s = -1.8 a, v gs = 0 v n-ch p-ch -0.75 -1.1 v dynamic a n-ch 11.5 20 total gate charge q g n-ch p-ch 13.5 20 n-channel v ds = 15 v, v gs = 5 v, i d = 8.8 a n-ch 3 gate-source charge q gs p-channel n-ch p-ch 2.2 nc p-channel v ds = -4 v, v gs = -5 v, i d = -5.7 a n-ch 4 gate-drain charge q gd n-ch p-ch 3 n-ch 15 22 turn-on delay time t d(on) n-ch p-ch 21 40 n-channel v dd = 15 v, r l = 15 n-ch 8 15 rise time t r v dd = 15 v, r l = 15 i d 1 a, v gen = 10 v, r g = 6 n-ch p-ch 45 70 p-channel n-ch 35 50 turn-off delay time t d(off) v dd = -4 v, r l = 4 i - 1 a, v = -4.5 v, r = 6 n-ch p-ch 60 100 ns i d - 1 a, v gen = -4.5 v, r g = 6 n-ch 10 20 fall time t f n-ch p-ch 55 85 n-ch 30 60 source-drain reverse recovery time t rr i f = 1.8 a, di/dt = 100 a/ s n-ch p-ch 50 100 notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%.
SI4501ADY vishay siliconix new product document number: 71922 s-21166 ? rev. a, 29-jul-02 www.vishay.com 3 typical characteristics (25 c unless noted) n?channel - on-resistance ( 0 8 16 24 32 40 012345 0 8 16 24 32 40 0246810 0 1 2 3 4 5 6 0 3 6 9 12 15 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0.00 0.01 0.02 0.03 0.04 0.05 0 6 12 18 24 30 0 400 800 1200 1600 2000 0 6 12 18 24 30 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 thru 5 v v gs - gate-to-source voltage (v) - drain current (a) i d 25 c t c = -55 c - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs c rss c oss c iss r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 4 v 3 v 125 c v ds = 15 v i d = 8.8 a v gs = 10 v i d = 8.8 a
SI4501ADY vishay siliconix new product www.vishay.com 4 document number: 71922 s-21166 ? rev. a, 29-jul-02 typical characteristics (25 c unless noted) n?channel v gs - gate-to-source voltage (v) 0.01 0 1 80 100 40 60 10 0.1 power (w) single pulse power, junction-to-ambient time (sec) -0.8 -0.6 -0.4 -0.2 -0.0 0.2 0.4 -50 -25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 0246810 1 10 100 i d = 8.8 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold voltage variance (v) v gs(th) t j - temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) - source current (a) i s v ds - drain-to-source voltage (v) 100 0.1 0.1 1 10 100 limited by r ds(on) 0.01 1 t a = 25 c single pulse 1 s 10 s dc - drain current (a) i d 10 ms safe operating area 1 ms 20 0.001 0.01 10 100 ms
SI4501ADY vishay siliconix new product document number: 71922 s-21166 ? rev. a, 29-jul-02 www.vishay.com 5 typical characteristics (25 c unless noted) n?channel 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 75 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SI4501ADY vishay siliconix new product www.vishay.com 6 document number: 71922 s-21166 ? rev. a, 29-jul-02 typical characteristics (25 c unless noted) p?channel - on-resistance ( 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 8 16 24 32 40 0246810 0 1 2 3 4 5 6 0 3 6 9 12 15 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 0 400 800 1200 1600 2000 02468 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 5 thru 3.5 v v gs - gate-to-source voltage (v) - drain current (a) i d 25 c t c = -55 c - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs c rss c oss c iss r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 2.5 v v gs = 4.5 v 3 v 125 c v ds = -4 v i d = 5.7 a v gs = 4.5 v i d = 5.7 a 2.5 v 2 v 1.5 v
SI4501ADY vishay siliconix new product document number: 71922 s-21166 ? rev. a, 29-jul-02 www.vishay.com 7 typical characteristics (25 c unless noted) p?channel v gs - gate-to-source voltage (v) 0.01 0 1 80 100 40 60 10 0.1 power (w) single pulse power, junction-to-ambient time (sec) -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.00 0.05 0.10 0.15 0.20 012345 1 10 20 i d = 5.7 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold voltage variance (v) v gs(th) t j - temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) - source current (a) i s v ds - drain-to-source voltage (v) 100 0.1 0.1 1 10 limited by r ds(on) 0.01 1 t a = 25 c single pulse 1 s 10 s dc - drain current (a) i d 10 ms safe operating area 1 ms 20 0.001 0.01 10 100 ms
SI4501ADY vishay siliconix new product www.vishay.com 8 document number: 71922 s-21166 ? rev. a, 29-jul-02 typical characteristics (25 c unless noted) p?channel 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 75 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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