? 2006 ixys all rights reserved polar tm high speed igbt for pdp applications symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v gem 30 v i c25 t c = 25 c, igbt chip capability 170 a i cp t j 150 c, tp < 10 s 360 a i c(rms) lead current limit 75 a ssoa v ge = 15 v, t vj = 150 c, r g = 20 i cm = 170 a (rbsoa) clamped inductive load, v ce < 300 v p c t c = 25c 330 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s t sold maximum plastic body temperature for 10 s. 260 c m d mounting torque 1.13/10 nm/lb.in. weight 5.5 g ds99558a(05/06) features ? international standard package ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? pdp screen drivers IXGQ170N30PB v ces = 300 v i cp = 360 a v ce(sat) 1.70 v to-3p g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v ge(th) i c = 1 ma, v ce = v ge 3.0 5.0 v i ces v ce = 300 v 1 a v ge = 0 v t j = 125 c 200 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) v ge = 15v, i c = 85 a 1.32 1.70 v note 1 t j = 125 c 1.36 v i c = 170 a 1.73 v t j = 125 c 1.89 v (tab) g c e preliminary technical information
ixys reserves the right to change limits, test conditions and dimensions. IXGQ170N30PB symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = 85 a, v ce = 10 v 50 80 s c ies 5140 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 315 pf c res 83 pf q g 143 nc q ge i c = 85 a, v ge = 15 v, v ce = 0.5 v ces 26 nc q gc 60 nc t d(on) 24 ns t ri 71 ns t d(off) 100 ns t fi 82 ns t d(on) 22 ns t ri 81 ns t d(off) 102 ns t fi 157 ns r thjc 0.375 k/w r thcs 0.21 k/w resistive load, t j = 125 c i c = 85 a, v ge = 15 v v ce = 240 v, r g = 2.4 resistive load, t j = 25 c i c =85 a, v ge = 15 v v ce = 240 v, r g = 2.4 note 1: pulse test, t 300 s, duty cycle 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-3p (ixtq) outline preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys all rights reserved fig. 1. output characteristics @ 25oc 0 40 80 120 160 200 240 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. exteded output characteristics @ 25oc 0 50 100 150 200 250 300 350 01234567 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 40 80 120 160 200 240 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.9 1.1 1.3 1.5 1.7 1.9 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 250a i c = 170a i c = 50a i c = 85a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 250a 170a 85a 50a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 220 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v ge - volts i c - amperes t j = 125oc 25oc - 40oc IXGQ170N30PB
ixys reserves the right to change limits, test conditions and dimensions. IXGQ170N30PB fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 30 60 90 120 150 180 210 240 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. resistive turn-on rise time v s. collector current 70 72 74 76 78 80 82 84 86 88 80 90 100 110 120 130 140 150 160 170 i c - amperes t r - nanoseconds r g = 2.4 v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 10. resistive turn-on switching times vs. gate resistance 75 80 85 90 95 100 105 110 115 2345678910 r g - ohms t r - nanoseconds 22 23 24 25 26 27 28 29 30 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 170a i c = 85a fig. 11. resistive turn-off switching times vs. junction temperature 70 80 90 100 110 120 130 140 150 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 92.0 93.5 95.0 96.5 98.0 99.5 101.0 102.5 104.0 105.5 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2.4 , v ge = 15v v ce = 240v i c = 85a i c = 170a fig. 12. resistive turn-off switching times v s. collector current 60 70 80 90 100 110 120 130 140 150 160 80 90 100 110 120 130 140 150 160 170 i c - amperes t f - nanoseconds 93 94 95 96 97 98 99 100 101 102 103 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 2.4 , v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 8. resistive turn-on rise time vs. junction temperature 60 80 100 120 140 160 180 200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2.4 v ge = 15v v ce = 240v i c = 170a i c = 85a
? 2006 ixys all rights reserved fig. 13. resistive turn-off switching times vs. gate resistance 120 125 130 135 140 145 150 155 160 165 170 2345678910 r g - ohms t f - nanoseconds 90 100 110 120 130 140 150 160 170 180 190 t d ( o f f ) - nanosecond s t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 85a i c = 170a fig. 14. gate charge 0 2 4 6 8 10 12 14 16 0 153045607590105120135150 q g - nanocoulombs v ge - volts v ce = 150v i c = 85a i g = 10 ma fig. 15. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 50 75 100 125 150 175 200 225 250 275 300 325 v ce - volts i c - amperes t j = 150oc r g = 20 dv / dt < 10v / ns fig. 16. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 17. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w IXGQ170N30PB
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