schottky barrier diode RB228T100 ? applications ? dimensions (unit : mm) ? structure switching power supply ? features 1)cathode common type. 2)low i r 3)high reliability ? construction silicon epitaxial planer ? absolute maximum ratings (ta=25 ?c) symbol unit v rm v v r v io a i fsm a tj ?c tstg ?c (*2) per diode ? electrical characteristics (ta=25 ?c) symbol min. typ. max. unit conditions forward voltage v f - - 0.87 v i f =5a reverse current i r - - 0.15 ma v r =100v thermal impedance jc - - 2.00 c/w junction to case parameter limits reverse voltage (repetitive) 110 reverse voltage (dc) 100 average rectified forward current (*1) 30 forward current surge peak (60hz ? 1cyc) (*2) 100 junction temperature 150 storage temperature ? 40 to ? 150 (*1) business frequence sin wave, tc=83c max. rating of per diode : lo/2 parameter rohm : o220fn manufacture date 1.2 1.3 0.8 (1) (2) (3) 10.00.3 0.1 5.00.2 8.00.2 12.00.2 2.80.2 0.1 4.50.3 0.1 0.70.1 0.05 2.60.5 13.5min 8.0 15.00.4 0.2 1/4 2011.12 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RB228T100 0.001 0.01 0.1 1 10 100 100 200 300 400 500 600 700 800 900 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) ta=125 c ta=75 c ta=150 c ta= - 25 c ta=25 c 1 10 100 1000 10000 100000 1000000 0 10 20 30 40 50 60 70 80 90 100 110 reverse voltage v r (v) v r - i r characteristics ta= - 25 c ta=125 c ta=25 c ta=75 c ta=150 c reverse current:i r (na) 10 100 1000 0 10 20 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 720 730 740 750 760 770 v f dispersion map forward voltage:v f (mv) ave:731.5mv ta=25 c i f =5a n=30pcs 0 100 200 300 400 reverse current:i r (na) i r dispersion map ta=25 c v r =100v n=30pcs ave:151na 500 510 520 530 540 550 560 570 580 590 600 ave:514.4pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB228T100 200 250 300 350 400 i fsm dispersion map peak surge forward current:i fsm (a) ave:231a 8.3ms i fsm 1cyc 0 5 10 15 20 25 30 ave:8.2ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 100 150 200 250 300 1 10 100 peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 8.3ms i fsm 1cyc 8.3ms 0 100 200 300 400 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) mounted on epoxy board time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 10 20 30 40 50 60 0 10 20 30 40 50 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics dc d=1/2 sin( 180) 3/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB228T100 0 0.005 0.01 0.015 0.02 0 10 20 30 40 50 60 70 80 90 100 reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics sin( 180) dc d=1/2 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 ambient temperature:ta( c ) derating curve (io - ta) average rectified forward current:io(a) t tj=150 c d=t/t t v r io v r =50v 0a 0v sin( 180) dc d=1/2 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =50v 0a 0v sin( 180) dc d=1/2 0 5 10 15 20 25 30 ave:3.9kv ave:10.9kv c=100pf r=1.5k c=200pf r=0 electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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