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| savantic semiconductor product specification silicon npn power transistors 2SD2222 description with to-3pl package complement to type 2sb1470 high dc current gain low saturation voltage v c e(sat) darlington applications for power amplification pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a t c =25 120 p c collector power dissipation t a =25 3.5 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2222 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ;i b =0 160 v v cesat collector-emitter saturation voltage i c =7a ;i b =7ma 3.0 v v besat base-emitter saturation voltage i c =7a ;i b =7ma 3.0 v i cbo collector cut-off current v cb =160v; i e =0 100 a i ceo collector cut-off current v ce =160v; i b =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =5v 1000 h fe-2 dc current gain i c =7a ; v ce =5v 3500 20000 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 20 mhz switching times t on turn-on time 2.0 s t s storage time 6.0 s t f fall time i c =7a ;i b1 =-i b2 =7ma v cc =50v 1.2 s h fe-2 classifications q p 3500-10000 7000-20000 savantic semiconductor product specification 3 silicon npn power transistors 2SD2222 package outline fig.2 outline dimensions (unindicated tolerance: 0.50 mm) |
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