2005. 10. 31 1/3 semiconductor technical data ktb598 epitaxial planar pnp transistor revision no : 1 low frequency power amp, converter electronic governor applications features low saturation voltage : v ce(sat) =-0.3v(max.) at i c =-0.5a. complementary to ktd545. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-20v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (1) (note) v ce =-2v, i c =-50ma 70 - 400 h fe (2) v ce =-2v, i c =-1a(pulse) 30 - - collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - -0.15 -0.3 v base-emitter saturation voltage v be(sat) i c =-500ma, i b =-50ma - -0.85 -1.2 v transition frequency f t v ce =-10v, i c =-50ma - 180 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 25 - pf note : h fe classification o:70 140, y:120 240, gr:200 400 characteristic symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v collector current i c -1 a collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150
2005. 10. 31 2/3 ktb598 revision no : 1 -0.01 collector-emitter saturation ce -300 -100 -30 -10 collector current i (ma) c v - i h - i c collector current i (ma) c collector current i (ma) collector-emitter voltage v (v) 0 ce 0 i - v cce -1 -2 -3 -4 -5 -6 -7 -200 -400 -600 -800 ce(sat) c -1k -3k -10k -0.03 0.05 -0.1 -0.3 -0.5 -1.0 i /i =10 c fe c -8 i =0ma b b i =-1ma b i =-2ma b i =-4ma b i =-6ma b i =-10ma i =-8ma b collector-emitter voltage v (v) collector current i (ma) 0 0 -200 -400 -0.2 -600 -800 c -0.8 -0.4 -0.6 -1.0 ce i - v cce -1000 b i =-1ma i =-3ma b i =-5ma b i =-10ma b i =-20ma b i =-30ma b i =-50ma b i =-100 ma b base-emitter voltage v (v) collector current i (a) 0 0 -0.2 -0.4 -0.2 -0.4 -0.6 -0.8 c -1.4 -0.6 -0.8 -1.0 -1.2 -1.6 be i - v c be -1.0 -1.2 -1.4 v =-2v ce -2.0 voltage v (v) b transition frequency f (mhz) collector current i (ma) -300 -10 30 10 -1 -3 -30 c -100 -1k v =-10v ce 500 50 100 300 t 1k 2k f - i t c -1 -3 -10 -30 -1 fe dc current gain h -100 -300 -1k -3k -10 k -3 -5 -10 -30 -50 -100 -300 -500 v =-2v ce
ktb598 collector emitter voltage v ce(sat) (v) safe operating area collector current i c (a) -0.01 -10 -0.1 -1 -100 -0.1 -1 -10 dc o peratio n t a =25 c i c max(pulsed) * single nonrepetitive pulse t c = 25 c * 200ms 2005. 10. 31 3/3 revision no : 1
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