? 2007 ixys all rights reserved 1 - 2 ixys reserves the right to change limits, test conditions and dimensions. vhf 55 vho 55 vko 55 vkf 55 20070731a features ? package with copper base plate ? isolation voltage 3000 v~ ? planar passivated chips ? low forward voltage drop ? 1/4" fast-on power terminals applications ? supplies for dc power equipment ? input rectifiers for pwm inverter ? battery dc power supplies ? field supply for dc motors advantages ? easy to mount with two screws ? space and weight savings ? improved temperature and power cycling capability ? small and light weight dimensions in mm (1 mm = 0.0394") data according to iec 60747 refer to a single diode/thyristor unless otherwise stated for resistive load at bridge output. v rsm v rrm type v dsm v drm vv 800 800 xxx 55-08io7 1200 1200 xxx 55-12io7 1400 1400 xxx 55-14io7 1600 1600 xxx 55-16io7 xxx = type i dav = 53 a v rrm = 800-1600 v symbol test conditions maximum ratings i dav t k = 85c, module 53 a i davm module 53 a i frms , i trms per leg 41 a i fsm , i tsm t vj = 45c; t = 10 ms (50 hz), sine 550 a v r = 0 v t = 8.3 ms (60 hz), sine 600 a t vj = t vjm t = 10 ms (50 hz), sine 500 a v r = 0 v t = 8.3 ms (60 hz), sine 550 a i 2 t t vj = 45c t = 10 ms (50 hz), sine 1520 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 1520 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 1250 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 1250 a 2 s (di/dt) cr t vj = 125c repetitive, i t = 50 a 150 a/ s f = 50 hz, t p = 200 s v d = 2/3 v drm i g = 0.3 a, non repetitive, i t = 1/2 ? i dav 500 a/ s di g /dt = 0.3 a/ s (dv/dt) cr t vj = t vjm ; v dr = 2/3 v drm 1000 v/ s r gk = ; method 1 (linear voltage rise) v rgm 10 v p gm t vj = t vjm t p = 30 s 10 w i t = i tavm t p = 500 s 5w t p = 10 ms 1w p gavm 0.5 w t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque (m5) 5 15 % nm (10-32 unf) 44 15 % lb.in. weight 110 g preliminary data single phase rectifier bridge vhf 55 vho 55 vkf 55 vko 55
? 2007 ixys all rights reserved 2 - 2 ixys reserves the right to change limits, test conditions and dimensions. vhf 55 vho 55 vko 55 vkf 55 20070731a symbol test conditions characteristic values i d , i r t vj = t vjm ; v r = v rrm ; v d = v drm 5ma v t i t = 80 a; t vj = 25c 1.64 v v t0 for power-loss calculations only 0.85 v r t 11 m v gt v d = 6 v; t vj = 25c 1.5 v t vj = -40c 1.6 v i gt v d = 6 v; t vj = 25c 100 ma t vj = -40c 200 ma v gd t vj = t vjm ;v d = 2/3 v drm 0.2 v i gd 5ma i l t vj = 25c; t p = 10 s 450 ma i g = 0.45 a; di g /dt = 0.45 a/ s i h t vj = 25c; v d = 6 v; r gk = ? 200 ma t gd t vj = 25c; v d = 1/2 v drm 2 s i g = 0.45 a; di g /dt = 0.45 a/ s t q t vj = t vjm ; i t = 20 a, t p = 200 s; di/dt = -10 a/ s typ. 250 s v r = 100 v; dv/dt = 15 v/ s; v d = 2/3 v drm r thjc per thyristor / diode; dc 0.9 k/w per module 0.18 k/w r thjk per thyristor / diode; dc 1.1 k/w per module 0.22 k/w d s creeping distance on surface 16.1 mm d a creepage distance in air 7.1 mm a max. allowable acceleration 50 m/s 2
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